MMBV2101L

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF. Features http://onsemi.com • • • • • 6.8−100 pF, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode SOT−23 2 Cathode 1 Anode 1 Anode High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance − 10% Complete Typical Design Curves Pb−Free Packages are Available MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C MMBV21xx Derate above 25°C @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range MV21xx LV2209 TJ Tstg Symbol VR IF PD 225 1.8 280 2.8 +150 −55 to +150 mW mW/°C mW mW/°C °C °C Value 30 200 Unit Vdc mAdc 1 2 3 TO−92 MARKING DIAGRAMS SOT−23 (TO−236) CASE 318−08 STYLE 8 xxx M G G 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. xxx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) MMBV21xx, MV21xx LV2209 Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R 30 25 IR TCC − − − − − 280 − − 0.1 − mAdc ppm/°C Min Typ Max Unit Vdc 1 2 TO−92 (TO−226AC) CASE 182 STYLE 1 yy yyyy AYWW G G yyyyyy = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 4 Publication Order Number: MMBV2101LT1/D MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMBV2101LT1 MMBV2101LT1G MMBV2101L MV2101 MV2101G MMBV2103LT1 MMBV2105LT1 MMBV2105LT1G MMBV2105L MV2105 MV2105G MMBV2107LT1 MMBV2107LT1G MMBV2107L MMBV2108LT1 MMBV2108LT1G LV2209 MMBV2109LT1 MMBV2109LT1G MMBV2109L MV2109 MV2109G Marking M4G M4G M4G MV2101 MV2101 4H 4U 4U 4U MV2105 MV2105 4W 4W 4W 4X 4X LV2209 4J 4J 4J MV2109 MV2109 Package SOT−23 SOT−23 (Pb−Free) SOT−23 TO−92 TO−92 (Pb−Free) SOT−23 SOT−23 SOT−23 (Pb−Free) SOT−23 TO−92 TO−92 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 SOT−23 (Pb−Free) TO−92 SOT−23 SOT−23 (Pb−Free) SOT−23 TO−92 TO−92 (Pb−Free) Shipping † 3,000 / Tape & Reel 3,000 / Tape & Reel Bulk (Note 1) 1,000 per Box 1,000 per Box 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel Bulk (Note 1) 1,000 per Box 1,000 per Box 3,000 / Tape & Reel 3,000 / Tape & Reel Bulk (Note 1) 3,000 / Tape & Reel 3,000 / Tape & Reel 1,000 per Box 3,000 / Tape & Reel 3,000 / Tape & Reel Bulk (Note 1) 1,000 per Box 1,000 per Box Min 6.1 6.1 6.1 6.1 6.1 9.0 13.5 13.5 13.5 13.5 13.5 19.8 19.8 19.8 24.3 24.3 29.7 29.7 29.7 29.7 29.7 29.7 Nom 6.8 6.8 6.8 6.8 6.8 10 15 15 15 15 15 22 22 22 27 27 33 33 33 33 33 33 Max 7.5 7.5 7.5 7.5 7.5 11 16.5 16.5 16.5 16.5 16.5 24.2 24.2 24.2 29.7 29.7 36.3 36.3 36.3 36.3 36.3 36.3 Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 450 450 450 450 400 400 400 400 400 400 350 350 350 300 300 200 200 200 200 200 200 TR, Tuning Ratio C2/C30 f = 1.0 MHz Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 Typ 2.7 2.7 2.7 2.7 2.7 2.9 2.9 2.9 2.9 2.9 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16″. 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85°C in the following equation, which defines TCC: TCC + CT() 85°C) – CT(–65°C) 106 · 85 ) 65 CT(25°C) Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q + 2pfC G Accuracy limited by measurement of CT to ± 0.1 pF. http://onsemi.com 2 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 TYPICAL DEVICE CHARACTERISTICS 1000 500 C T , DIODE CAPACITANCE (pF) 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 MMBV2109LT1/MV2109 MMBV2105LT1/MV2105 MMBV2101LT1/MV2101 TA = 25°C f = 1.0 MHz VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 1.040 NORMALIZED DIODE CAPACITANCE I R , REVERSE CURRENT (nA) 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 −75 −50 NORMALIZED TO CT at TA = 25°C VR = (CURVE) −25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 TA = 75°C TA = 125°C TA = 25°C 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30 Figure 2. Normalized Diode Capacitance versus Junction Temperature 5000 3000 2000 Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) TA = 25°C f = 50 MHz 20 30 MMBV2101LT1/MV2101 MMBV2109LT1 Q, FIGURE OF MERIT 5000 3000 2000 1000 500 300 200 100 50 30 20 10 10 Figure 3. Reverse Current versus Reverse Bias Voltage MMBV2101LT1/MV2101 TA = 25°C VR = 4.0 Vdc 20 MMBV2109LT1/MV2109 30 50 70 100 f, FREQUENCY (MHz) 200 250 Figure 4. Figure of Merit versus Reverse Voltage Figure 5. Figure of Merit versus Frequency http://onsemi.com 3 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L A B SEATING PLANE R D K L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.050 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 −−− 6.35 −−− 2.03 2.66 −−− 1.27 2.93 −−− 3.43 −−− XX D G H V C N SECTION X−X 1 2 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 ÉÉ ÉÉ P J DIM A B C D G H J K L N P R V STYLE 1: PIN 1. ANODE 2. CATHODE MMBV2101LT1/D