MMBV3102LT1G

MMBV3102LT1G Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 − 55 to +150 Unit Vdc mAdc mW mW/°C °C °C http://onsemi.com 3 Cathode 1 Anode 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM M4CM G G 1 M4C = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV3102LT1G Package Shipping† SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 4 1 Publication Order Number: MMBV3102LT1/D MMBV3102LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV3102LT1 Min 20 Nom 22 Max 25 Symbol V(BR)R IR TCC Min 30 − − Typ − − 300 Max − 0.1 − Unit Vdc mAdc ppm/°C Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min 4.5 Typ 4.8 TYPICAL CHARACTERISTICS 40 Q, FIGURE OF MERIT (x 1000) 36 CT , DIODE CAPACITANCE (pF) 32 28 24 20 16 12 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25°C 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TA = 25°C f = 50 MHz 0 3.0 6.0 9.0 12 15 18 21 24 27 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T, DIODE CAPACITANCE (NORMALIZED) 100 I R , REVERSE CURRENT (nA) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz 10 VR = 20 Vdc 1.0 0.1 0.01 0.001 -60 -20 0 +20 +60 +100 +140 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS 1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc. http://onsemi.com 2 MMBV3102LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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