MMBV409LT1

MMBV409LT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package Pb−Free Package is Available http://onsemi.com 3 Cathode 1 Anode MAXIMUM RATINGS Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 20 200 225 1.8 +125 −55 to +150 Unit Vdc mAdc mW mW/°C °C °C SOT−23 (TO−236) CASE 318 STYLE 8 1 2 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM X5 M G G 1 X5 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV409LT1 MMBV409LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 3 Publication Order Number: MMBV409LT1/D MMBV409LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV409LT1 Min 26 Nom 29 Max 32 Symbol V(BR)R IR TCC Min 20 − − Typ − − 300 Max − 0.1 − Unit Vdc mAdc ppm/°C Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C8 f = 1.0 MHz (Note 1) Min 1.5 Max 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. TYPICAL CHARACTERISTICS 40 C T, DIODE CAPACITANCE (pF) 1000 Q, FIGURE OF MERIT 32 24 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C 100 16 8 0 10 1 2 3 10 20 30 100 10 100 f, FREQUENCY (MHz) 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 100 60 20 10 6.0 2.0 1.0 0.6 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz VR = 15 Vdc 0.2 0.1 0.06 0.02 0.01 0.006 0.002 0.001 −60 −40 −20 0 +20 +40 +60 +80 +100 +120 +140 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance http://onsemi.com 2 MMBV409LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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