MMBV432LT1

MMBV432LT1 Preferred Device Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for high volume, pick and place assembly requirements. Features http://onsemi.com • • • • • • • High Figure of Merit − Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz Guaranteed Capacitance Range Dual Diodes − Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching − Guaranteed ±1.0% (Max) Over Specified Tuning Range Pb−Free Package is Available DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 3 2 3 MAXIMUM RATINGS (Each Diode) Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 14 200 225 1.8 +125 −55 to +125 Unit Vdc mAdc mW mW/°C °C °C 1 2 SOT−23 (TO−236) CASE 318 STYLE 9 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. M4B M G G 1 M4B = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV432LT1 MMBV432LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 4 Publication Order Number: MMBV432LT1/D MMBV432LT1 ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 9.0 Vdc) Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) Capacitance Ratio C2/C8 (f = 1.0 MHz) Figure of Merit (VR = 2.0 Vdc, f = 100 MHz) Symbol V(BR)R IR CT CR Q Min 14 − 43 1.5 100 Typ − − − − 150 Max − 100 48.1 2.0 − Unit Vdc nAdc pF − − http://onsemi.com 2 MMBV432LT1 TYPICAL CHARACTERISTICS (Each Diode) 100 CT , DIODE CAPACITANCE (pF) 70 50 Q, FIGURE OF MERIT 450 550 350 30 20 f = 1.0 MHz TA = 25°C 250 150 TA = 25°C f = 100 MHz 10 1 2 3 5 7 10 50 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance CT , DIODE CAPACITANCE (NORMALIZED) 2000 1000 Q, FIGURE OF MERIT 500 200 100 50 20 10 VR = 2.0 Vdc TA = 25°C 1.06 Figure 2. Figure of Merit versus Voltage 1.04 VR = 2.0 Vdc 1.02 VR = 4.0 Vdc 1.00 0.98 0.96 −75 f = 1.0 MHz 20 30 50 70 100 200 300 −50 −25 0 +25 +50 +75 +100 +125 f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Figure of Merit versus Frequency 10 5 I R , REVERSE CURRENT (nA) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 2 4 6 TA = 25°C TA = 75°C TA = 125°C Figure 4. Diode Capacitance versus Temperature 8 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Reverse Current versus Reverse Voltage http://onsemi.com 3 MMBV432LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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