MMBV432LT1
Preferred Device
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top−of−the−line application requiring
back−to−back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT−23 plastic package for
high volume, pick and place assembly requirements.
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Features
•
•
•
•
•
•
•
High Figure of Merit − Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz
Guaranteed Capacitance Range
Dual Diodes − Save Space and Reduce Cost
Surface Mount Package
Available in 8 mm Tape and Reel
Monolithic Chip Provides Improved Matching −
Guaranteed ±1.0% (Max) Over Specified Tuning Range
Pb−Free Package is Available
DUAL VOLTAGE VARIABLE
CAPACITANCE DIODE
1
2
3
3
MAXIMUM RATINGS (Each Diode)
Rating
1
Symbol
Value
Unit
Reverse Voltage
VR
14
Vdc
Forward Current
IF
200
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
−55 to +125
°C
2
SOT−23 (TO−236)
CASE 318
STYLE 9
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
M4B M G
G
1
M4B = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBV432LT1
SOT−23
3,000 / Tape & Reel
MMBV432LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MMBV432LT1/D
MMBV432LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
14
−
−
Vdc
Reverse Voltage Leakage Current
(VR = 9.0 Vdc)
IR
−
−
100
nAdc
Diode Capacitance
(VR = 2.0 Vdc, f = 1.0 MHz)
CT
43
−
48.1
pF
Capacitance Ratio C2/C8
(f = 1.0 MHz)
CR
1.5
−
2.0
−
Figure of Merit
(VR = 2.0 Vdc, f = 100 MHz)
Q
100
150
−
−
Reverse Breakdown Voltage
(IR = 10 mAdc)
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2
MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
550
70
Q, FIGURE OF MERIT
CT , DIODE CAPACITANCE (pF)
100
50
30
f = 1.0 MHz
TA = 25°C
20
350
250
TA = 25°C
f = 100 MHz
150
10
2
1
3
5
7
50
10
4
6
10
8
Figure 1. Diode Capacitance
Figure 2. Figure of Merit versus Voltage
CT , DIODE CAPACITANCE (NORMALIZED)
VR = 2.0 Vdc
TA = 25°C
500
200
100
50
20
2
VR, REVERSE VOLTAGE (VOLTS)
1000
30
50 70 100
1.06
1.04
VR = 2.0 Vdc
1.02
VR = 4.0 Vdc
1.00
0.98
f = 1.0 MHz
0.96
−75
200 300
−50
−25
0
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Figure of Merit versus Frequency
Figure 4. Diode Capacitance versus Temperature
10
TA = 125°C
5
I R , REVERSE CURRENT (nA)
20
10
0
VR, REVERSE VOLTAGE (VOLTS)
2000
Q, FIGURE OF MERIT
450
2
1
0.5
TA = 75°C
0.2
0.1
0.05
TA = 25°C
0.02
0.01
0
2
4
6
8
10
12
14
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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