MMBV809LT1

MMBV809LT1 Preferred Device Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • • • • Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel Pb−Free Packages are Available http://onsemi.com 4.5−6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 ANODE 3 CATHODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD 225 1.8 TJ Tstg +125 −55 to +125 mW mW/°C °C °C Value 20 20 Unit Vdc mAdc 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 8 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR5 Board 1.0 x 0.75 x 0.62 in. MARKING DIAGRAM 5K M G G 1 5K = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV809LT1 MMBV809LT1G MMBV809LT3 MMBV809LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping † 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel SOT−23 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 4 Publication Order Number: MMBV809LT1/D MMBV809LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic − All Types Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 − Typ − − Max − 50 Unit Vdc nAdc Ct, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MMBV809LT1 Min 4.5 Typ 5.3 Max 6.1 Q, Figure of Merit VR = 3.0 Vdc f = 500 MHz Typ 75 CR, Capacitance Ratio C2/C8 f = 1.0 MHz (Note 2) Min 1.8 Max 2.6 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. TYPICAL CHARACTERISTICS 10 9 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 10 0.1 1.0 f, FREQUENCY (GHz) 10 VR = 3 Vdc TA = 25°C 100 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit R S , SERIES RESISTANCE (MHz) VR = 3.0 Vdc f = 1.0 MHz 800 CT , DIODE CAPACITANCE (NORMALIZED) 1000 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 −50 −25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz 600 400 0 0.2 0.4 0.6 0.8 1.0 1.2 f, FREQUENCY (GHz) TA, AMBIENT TEMPERATURE (°C) Figure 3. Series Resistance Figure 4. Diode Capacitance http://onsemi.com 2 MMBV809LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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