MMBV809LT1
Preferred Device
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid−state reliability in replacement of
mechanical tuning methods.
Features
•
•
•
•
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Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Available in 8 mm Tape and Reel
Pb−Free Packages are Available
4.5−6.1 pF VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
20
Vdc
Forward Current
IF
20
mAdc
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Junction Temperature
Storage Temperature Range
Reverse Voltage
225
1.8
mW
mW/°C
TJ
+125
°C
Tstg
−55 to +125
°C
1
ANODE
3
3
CATHODE
SOT−23 (TO−236)
CASE 318
STYLE 8
1
2
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 Board 1.0 x 0.75 x 0.62 in.
5K M G
G
1
5K = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping †
Device
Package
MMBV809LT1
SOT−23
3,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
10,000 / Tape & Reel
MMBV809LT1G
MMBV809LT3
MMBV809LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MMBV809LT1/D
MMBV809LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic − All Types
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
Unit
V(BR)R
20
−
−
Vdc
IR
−
−
50
nAdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
MMBV809LT1
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz (Note 2)
Min
Typ
Max
Typ
Min
Max
4.5
5.3
6.1
75
1.8
2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
TYPICAL CHARACTERISTICS
10
1000
CT , DIODE CAPACITANCE (pF)
9
Q, FIGURE OF MERIT
8
7
6
5
4
3
VR = 3 Vdc
TA = 25°C
100
2
1
0
0.5
1
2
3
4
5
8
10
10
0.1
15
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
R S , SERIES RESISTANCE (MHz)
VR = 3.0 Vdc
f = 1.0 MHz
800
600
0
10
f, FREQUENCY (GHz)
1000
400
1.0
VR, REVERSE VOLTAGE (VOLTS)
0.2
0.4
0.6
0.8
1.0
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
1.2
VR = 3.0 Vdc
f = 1.0 MHz
f, FREQUENCY (GHz)
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Series Resistance
Figure 4. Diode Capacitance
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2
+100
+125
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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