MMBZ15VDLT1G

MMBZxxVxL, SZMMBZxxVxL Series Zener Diodes, 40 Watt Peak Power SOT−23 Dual Common Cathode Zeners www.onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. SOT−23 CASE 318 STYLE 9 Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional • • • • • • • • Configurations or a Single Bidirectional Configuration Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V Peak Power − 40 W @ 1.0 ms (Bidirectional), per Figure 5 Waveform ESD Rating of Class 3B (exceeding 16 kV) per the Human Body Model ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge Low Leakage < 100 nA Flammability Rating: UL 94 V−O SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds ANODE 1 3 CATHODE ANODE 2 MARKING DIAGRAM XXX MG G 1 XXX = 15D, 27C or 39C M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MMBZ15VDLT1G, SOT−23 SZMMBZ15VDLT1G (Pb−Free) 3,000 / Tape & Reel MMBZ15VDLT3G, SOT−23 SZMMBZ15VDLT3G (Pb−Free) 10,000 / Tape & Reel MMBZxxVCLT1G, SZMMBZxxVCLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBZxxVCLT3G, SZMMBZxxVCLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 August, 2018 − Rev. 17 1 Publication Order Number: MMBZ15VDLT1/D MMBZxxVxL, SZMMBZxxVxL Series MAXIMUM RATINGS Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Rating Ppk 40 Watts Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 ° mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) I UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage V IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional Zener ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Breakdown Voltage Device* MMBZ15VDLT1G/T3G VBR (Note 4) (V) IR @ VRWM VC @ IPP (Note 5) @ IT Device Marking VRWM Volts nA Min Nom Max mA 15D 12.8 100 14.3 15 15.8 1.0 VC IPP VBR V A mV/5C 21.2 1.9 12 (VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage VBR (Note 4) (V) VC @ IPP (Note 5) @ IT VC IPP VBR V A mV/5C 38 1.0 26 0.76 35.3 Device Marking VRWM IR @ VRWM Volts nA Min Nom Max mA MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 MMBZ39VCLT1G/T3G 39C 31.2 50 37.05 39 40.95 1.0 55 Device* Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. www.onsemi.com 2 MMBZxxVxL, SZMMBZxxVxL Series TYPICAL CHARACTERISTICS MMBZ15VDL, SZMMBZ15VDL MMBZ27VCL, SZMMBZ27VCL BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) BREAKDOWN VOLTAGE (VOLTS) (VBR @ I T ) 17 BIDIRECTIONAL 16 15 14 UNIDIRECTIONAL 13 -40 +125 +25 +85 TEMPERATURE (°C) 29 BIDIRECTIONAL 28 27 26 25 -55 Figure 2. Typical Breakdown Voltage versus Temperature 1000 300 100 250 PD , POWER DISSIPATION (mW) IR (nA) Figure 1. Typical Breakdown Voltage versus Temperature 10 1 0.1 0.01 -40 +25 +85 TEMPERATURE (°C) ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 +125 0 PEAK VALUE—IPP VALUE (%) 100 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. IPP HALF VALUE— 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 25 50 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C Figure 3. Typical Leakage Current versus Temperature tr ≤ 10 ms +125 +25 +85 TEMPERATURE (°C) 100 90 80 70 60 50 40 30 20 10 0 0 Figure 5. Pulse Waveform 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Derating Curve www.onsemi.com 3 175 200 MMBZxxVxL, SZMMBZxxVxL Series TYPICAL APPLICATIONS VBatt ECU Connector Single Wire CAN Transceiver 47 mH Bus Loss of Ground Protection Circuit RLoad 9.09 kW 1% * Load CLoad 220 pF 10% GND *ESD Protection − MMBZ27VCL or equivalent. May be located in each ECU (CLoad needs to be reduced accordingly) or at a central point near the DLC. Figure 7. Single Wire CAN Network Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification (Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common cathode zener configuration. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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