MMBZ5239ELT1G

MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. www.onsemi.com 3 Cathode Features • • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Voltage Range − 2.4 V to 91 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 1 Anode MARKING DIAGRAM 3 1 2 SOT−23 CASE 318 STYLE 8 Bxx M G G 1 Bxx xx M G = Device Code = (Refer to page 2) = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION MAXIMUM RATINGS Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C PD Thermal Resistance, Junction−to−Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C RqJA PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. © Semiconductor Components Industries, LLC, 2003 October, 2016 − Rev. 8 Package Shipping† MMBZ52xxELT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SZMMBZ52xxELT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBZ52xxELT3G SOT−23 (Pb−Free) 10000 / Tape & Reel Device Rating 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Publication Order Number: MMBZ5221ELT1/D MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 4) VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Marking Min Nom Max mA W W mA mA V MMBZ5221ELT1/T3G BE2 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMBZ5226ELT1/T3G BE7 3.13 3.3 3.47 20 28 1600 0.25 25 1 MMBZ5228ELT1/T3G BE9 3.70 3.9 4.10 20 23 1900 0.25 10 1 MMBZ5229ELT1/T3G BF1 4.08 4.3 4.52 20 22 2000 0.25 5 1 MMBZ5230ELT1/T3G BF2 4.46 4.7 4.94 20 19 1900 0.25 5 2 MMBZ5231ELT1/T3G BF3 4.84 5.1 5.36 20 17 1600 0.25 5 2 MMBZ5232ELT1/T3G BF4 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMBZ5234ELT1/T3G BF6 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMBZ5235ELT1/T3G BF7 6.46 6.8 7.14 20 5 750 0.25 3 5 MMBZ5236ELT1/T3G BF8 7.12 7.5 7.88 20 6 500 0.25 3 6 MMBZ5237ELT1/T3G BF9 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMBZ5239ELT1/T3G BG2 8.65 9.1 9.55 20 10 600 0.25 3 7 MMBZ5240ELT1/T3G BG3 9.50 10 10.50 20 17 600 0.25 3 8 MMBZ5242ELT1/T3G BG5 11.40 12 12.60 20 30 600 0.25 1 9.1 MMBZ5243ELT1/T3G BG6 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMBZ5244ELT1/T3G BG7 13.30 14 14.70 9 15 600 0.25 0.1 10 MMBZ5245ELT1/T3G BG8 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMBZ5246ELT1G† BG9 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMBZ5248ELT1/T1G BH2 17.10 18 18.90 7 21 600 0.25 0.1 14 MMBZ5250ELT1/T3G BH4 19.00 20 21.00 6.2 25 600 0.25 0.1 15 Device* Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ−prefix devices where applicable. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. www.onsemi.com 2 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series ELECTRICAL CHARACTERISTICS (continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (VF = 0.9 V Max @ IF = 10 mA for all types.) Zener Voltage (Note 5) VZ (V) Zener Impedance @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR Device Marking Min Nom Max mA W W mA mA V MMBZ5252ELT1G† BH6 22.80 24 25.20 5.2 33 600 0.25 0.1 18 MMBZ5253ELT1/T3G BH7 23.75 25 26.25 5 35 600 0.25 0.1 19 MMBZ5254ELT1/T3G BH8 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMBZ5255ELT1/T3G BH9 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMBZ5256ELT1/T3G BJ1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMBZ5257ELT1/T3G BJ2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMBZ5258ELT1/T3G BJ3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMBZ5261ELT1G BJ6 49.35 47 44.65 2.7 105 1000 0.25 0.1 36 MMBZ5262ELT1/T3G BJ7 48.45 51 53.55 2.5 125 1100 0.25 0.1 37 MMBZ5263ELT1/T3G BJ8 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 MMBZ5265ELT1G† BK1 58.90 62 65.10 2 185 1400 0.25 0.1 47 Device* 5. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. *Includes SZ−prefix devices where applicable. †MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel. www.onsemi.com 3 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMBZ52xxBLT1G SERIES, SZMMBZ52xxBLT1G SERIES 6 5 4 VZ @ IZT 3 VZ @ IZT 10 2 1 0 −1 −2 −3 TYPICAL TC VALUES FOR MMBZ52xxBLT1G SERIES, SZMMBZ52xxBLT1G SERIES 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage www.onsemi.com 4 1.1 1.2 MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (m A) TA = 25°C 100 BIAS AT 50% OF VZ NOM 100 10 1 +150°C 0.1 0.01 10 +25°C 0.00 1 0.0001 1 1 -55°C 0.00001 100 0 10 VZ, NOMINAL ZENER VOLTAGE (V) 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) 10 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 100 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 30 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 20 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) TA = 25°C 0.01 80 40 60 t, TIME (ms) Figure 9. 8 × 20 ms Pulse Waveform www.onsemi.com 5 80 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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