MMDFS6N303R2

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Other names and brands may be claimed as the property of others. MMDFS6N303 Power MOSFET 6 Amps, 30 Volts N−Channel SO−8, FETKYt The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck−Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. http://onsemi.com 6 AMPERES 30 VOLTS RDS(on) = 35 mW VF = 0.42 Volts N−Channel Features • Power MOSFET with Low VF • Lower Component Placement and Inventory Costs along with • • • • • D Board Space Savings Logic Level Gate Drive — Can be Driven by Logic ICs Mounting Information for SO−8 Package Provided Applications Information Provided R2 Suffix for Tape and Reel (2500 units/13″ reel) Marking: 6N303 G S MARKING DIAGRAM 8 MOSFET MAXIMUM RATINGS 1 (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate−to−Source Voltage — Continuous VGS "20 Vdc Drain Current (Note 2) − Continuous @ T = 25°C A − Single Pulse (tp v 10 ms) ID IDM 6.0 30 Adc Apk Total Power Dissipation @ TA = 25°C (Note 2) PD 2.0 Watts Single Pulse Drain−to−Source Avalanche Energy — Startin TJ = 25°C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W EAS 325 mJ 8 6N303 ALYW SO−8 CASE 751 STYLE 18 A L Y W 1 = Assembly Location = Wafer Lot = Year = Work Week PIN ASSIGNMENT 1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. 2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Anode 1 8 Cathode Anode 2 7 Cathode Source 3 6 Drain Gate 4 5 Drain Top View ORDERING INFORMATION Device Package Shipping † MMDFS6N303R2 SO−8 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MMDFS6N303/D MMDFS6N303 SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR Average Forward Current (Note 3) (Rated VR) TA = 104°C IO Peak Repetitive Forward Current (Note 3) (Rated VR, Square Wave, 20 kHz) TA = 108°C Ifrm Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Ifsm 30 Amps Thermal Resistance — Junction−to−Ambient (Note 4) — MOSFET RqJA 167 °C/W Thermal Resistance — Junction−to−Ambient (Note 5) — MOSFET RqJA 97 Thermal Resistance — Junction−to−Ambient (Note 2) — MOSFET RqJA 62.5 Thermal Resistance — Junction−to−Ambient (Note 4) — Schottky RqJA 197 Thermal Resistance — Junction−to−Ambient (Note 5) — Schottky RqJA 97 Thermal Resistance — Junction−to−Ambient (Note 3) — Schottky RqJA 62.5 Tj, Tstg −55 to 150 30 Volts Amps 2.0 Amps 4.0 THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET Operating and Storage Temperature Range MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 6) Characteristic Symbol Min Typ Max Unit 30 — — — — — Vdc mV/°C — — — — 1.0 20 — — 100 1.0 — — — — — — — 28 42 35 50 gFS — 9.0 — mhos pF OFF CHARACTERISTICS Drain−Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS mAdc nAdc ON CHARACTERISTICS (Note 6) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) VGS(th) Static Drain−Source Resistance (VGS = 10 Vdc, ID = 5.0 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) Vdc mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance 3. 4. 5. 6. Ciss — 430 600 Coss — 217 300 Crss — 67.5 135 Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max. Mounted with minimum recommended pad size, PC Board FR4. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MMDFS6N303 MOSFET ELECTRICAL CHARACTERISTICS − continued (TC = 25°C unless otherwise noted) (Note 7) Characteristic Symbol Min Typ Max Unit td(on) — 8.2 16.5 ns tr — 8.5 17 td(off) — 89.6 179 tf — 61.1 122 QT — 15.7 31.4 Q1 — 2.0 — Q2 — 4.6 — Q3 — 3.9 — — 0.77 1.2 trr — 54.5 — ta — 14.8 — tb — 39.7 — QRR — 0.048 — SWITCHING CHARACTERISTICS (Note 8) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) Fall Time Gate Charge (VDS = 15 Vdc, ID = 5.0 Adc, VGS = 10 Vdc) nC DRAIN SOURCE DIODE CHARACTERISTICS Forward On−Voltage (Note 7) (IS = 1.7 Adc, VGS = 0 Vdc) VSD Reverse Recovery Time (VGS = 0 V, IS = 5.0 A, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge Vdc ns mC SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 7) IF = 100 mAdc IF = 3.0 Adc IF = 6.0 Adc VF Maximum Instantaneous Reverse Current (Note 7) VR = 30 V IR Maximum Voltage Rate of Change VR = 30 V dV/dt 7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 8. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 TJ = 25°C TJ = 125°C 0.28 0.42 0.50 0.13 0.33 0.45 TJ = 25°C TJ = 125°C 250 — — 25 10,000 Volts mA mA V/ms MMDFS6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS 12 12 3.9 V 4.5 V TJ = 25°C VDS ≥ 10 V 10 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 10 V 3.5 V 8.0 3.3 V 6.0 4.0 VGS = 2.9 V 2.0 0 10 8.0 25°C 6.0 4.0 125°C TJ = − 55°C 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.5 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) R DS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS) R DS(on), DRAIN−TO−SOURCE RESISTANCE (OHMS) TJ = 25°C ID = 6.0 A 0.2 0.1 0 8.0 6.0 10 0.05 TJ = 25°C VGS = 4.5 V 0.04 10 V 0.03 0.02 1.0 2.0 3.0 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 4.0 5.0 6.0 7.0 8.0 9.0 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−To−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 1.8 VGS = 0 V VGS = 10 V ID = 6.0 A 1.4 IDSS , LEAKAGE (nA) R DS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 5.5 Figure 2. Transfer Characteristics 0.3 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 2.0 3.5 1.0 TJ = 125°C 100 100°C 10 0.6 0.2 −50 1.0 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5.0 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 4 30 MMDFS6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS VGS = 0 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VDS = 0 1200 TJ = 25°C Ciss C, CAPACITANCE (pF) 1000 800 Crss 600 Ciss 400 Coss 200 Crss 0 −10 −5.0 0 VGS 5.0 10 15 20 25 12 30 QT 10 8.0 20 Q1 6.0 ID = 5.0 A 4.0 30 Q3 VDS 0 0 4.0 8.0 0 16 12 QG, TOTAL GATE CHARGE (nC) VDS Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 5.0 IS, SOURCE CURRENT (AMPS) 1000 td(off) t, TIME (ns) 100 tf tr 10 td(on) VGS = 0 V TJ = 25°C 4.0 3.0 2.0 1.0 0 1.0 1.0 10 100 0.5 RG, GATE RESISTANCE (OHMS) 10 ms 0.1 0.8 0.9 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 350 EAS , SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 10 VGS = 12 V SINGLE PULSE TC = 25°C 0.7 Figure 10. Diode Forward Voltage versus Current Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10 s max. 1.0 ms 1.0 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (AMPS) 10 TJ = 25°C 2.0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 VGS Q2 ID = 6.0 A 300 250 200 150 100 50 0 0.01 0.1 1.0 10 100 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 MMDFS6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 0.01 CHIP JUNCTION 0.01 0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F SINGLE PULSE AMBIENT 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform 10 85°C IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 25°C −40 °C TJ = 125°C 1.0 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 85°C TJ = 125°C 25°C 1.0 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage http://onsemi.com 6 0.8 MMDFS6N303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 0.1 TJ = 125°C 0.01 85°C 0.001 0.0001 25°C 0.1 TJ = 125°C 0.01 0.001 25°C 0.0001 0.00001 0.00001 0.000001 0.000001 0 5.0 10 15 20 25 30 5.0 0 VR, REVERSE VOLTAGE (VOLTS) IO , AVERAGE FORWARD CURRENT (AMPS) 10 15 25 20 dc 4.5 30 FREQ = 20 kHz 4.0 3.5 SQUARE WAVE 3.0 Ipk/Io = p 2.5 Ipk/Io = 5.0 2.0 1.5 Ipk/Io = 10 1.0 Ipk/Io = 20 0.5 0 30 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 19. Typical Capacitance Figure 20. Current Derating 1.75 dc 1.50 SQUARE WAVE Ipk/Io = p 1.25 Ipk/Io = 5.0 1.00 Ipk/Io = 10 0.75 Ipk/Io = 20 0.50 0.25 0 0 25 5.0 VR, REVERSE VOLTAGE (VOLTS) PFO , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 100 10 20 Figure 18. Maximum Reverse Current 1000 5.0 15 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current 0 10 1.0 2.0 3.0 4.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation http://onsemi.com 7 5.0 140 160 MMDFS6N303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.05 0.02 0.1010 W 1.2674 W 27.987 W 30.936 W 36.930 W CHIP JUNCTION 39.422 mF 493.26 mF 0.0131 F 0.2292 F 2.267 F 0.01 0.01 SINGLE PULSE AMBIENT 0.001 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin CO − Vout LOAD − Buck Regulator LO + + Vin CO − Vout − Synchronous Buck Regulator http://onsemi.com 8 LOAD 1.0E+03 MMDFS6N303 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 + + Vin CO Vout LOAD Q1 − − Boost Regulator + + Vin CO − Vout LOAD − Buck−Boost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 Q2 LO D2 BATT #1 + Vin D1 CO − Q3 D3 BATT #2 http://onsemi.com 9 MMDFS6N303 TYPICAL APPLICATIONS Li−lon BATTERY PACK APPLICATIONS Battery Pack PACK + Li−Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK − SCHOTTKY SCHOTTKY • Applicable in battery packs which require a high current level. • During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. • During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. • Under normal operation, both transistors are on. http://onsemi.com 10 MMDFS6N303 PACKAGE DIMENSIONS SO−8 CASE 751−07 ISSUE AB −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) M Y M 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S STYLE 18: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 ANODE ANODE SOURCE GATE DRAIN DRAIN CATHODE CATHODE 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 11 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMDFS6N303/D