MMDJ3N03BJT

MMDJ3N03BJT Plastic Power Transistors SO−8 for Surface Mount Applications • Collector −Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — http://onsemi.com hFE= 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector −Emitter Saturation Voltage — • VCE(sat) = 0.18 Vdc (Max) @ IC = 1.2 Adc = 0.45 Vdc (Max) @ IC = 3.0 Adc Miniature SO−8 Surface Mount Package − Saves Board Space DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS, 3 AMPERES (SO−8) CASE 751−07 Style 16 Emitter−1 Base−1 Emitter−2 Base−2 1 2 3 4 8 7 6 5 Collector−1 Collector−1 Collector−2 Collector−2 Top View Pinout E B E B C C Schematic © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 5 1 Publication Order Number: MMDJ3N03BJT/D ÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎ Î Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. (2) fT = |hFE| S ftest DYNAMIC CHARACTERISTICS ON OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Maximum Temperature for Soldering Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 board material with one die operating. Derate above 25_C Thermal Resistance − Junction to Ambient on 1″ sq. (645 sq. mm) Collector pad on FR−4 board material with one die operating. Thermal Resistance − Junction to Ambient on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 board material with one die operating. Operating and Storage Junction Temperature Range Base Current — Continuous Collector Current — Continuous Collector Current — Peak Emitter−Base Voltage Collector−Emitter Voltage Collector−Base Voltage Current−Gain — Bandwidth Product(2) (IC = 500 mAdc, VCE = 10 Vdc, Ftest = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Base−Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Emitter Cutoff Current (VBE = 5.0 Vdc) Collector Cutoff Current (VCE = 25 Vdc, RBE = 200 W) (VCE = 25 Vdc, RBE = 200 W, TJ = 125°C) Emitter−Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) CHARACTERISTICS(1) Characteristic Characteristic Rating http://onsemi.com MMDJ3N03BJT 2 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) Symbol Symbol VEBO TJ, Tstg IEBO ICER Cob hFE VCEO Cib RθJA VCB VEB fT PD TL IC IB Min 6.0 85 80 60 30 — — — — — — — — — — — – 55 to + 150 Value ± 6.0 1.25 10 Max 0.105 — — 260 185 100 1.0 3.0 5.0 30 45 Typ 200 195 — — 85 — — — — — — — 72 1.10 1.25 0.15 0.18 0.45 Max 20 200 135 10 — — — — — — — W mW/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C μAdc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF — MMDJ3N03BJT VCE(sat) , COLLECTOR−EMITTER VOLTAGE (V) 1.00 VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 0.25 0.75 IC = 3.0 A 0.50 0.8 A 0.25 0.5 A 0.25 A 1.0 10 100 1000 1.2 A 0.20 0.15 0.10 0.5 A 0.05 0 1.0 10 0.25 A IC = 1.2 A 0.8 A 0 100 1000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. Collector Saturation Region 1000 1000 HFE, DC CURRENT GAIN HFE, DC CURRENT GAIN 150°C 25°C 100 −55 °C 150°C 25°C 100 −55 °C VCE = 1.0 V 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 10 0.1 VCE = 4.0 V 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 3. DC Current Gain Figure 4. DC Current Gain 10 IC/IB = 10 1.0 VBE(sat) V, VOLTAGE (V) VBE(sat) V, VOLTAGE (V) 1.0 0.1 VCE(sat) 0.1 VCE(sat) IC/IB = 50 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.01 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 Figure 5. “On” Voltages Figure 6. “On” Voltages http://onsemi.com 3 MMDJ3N03BJT 1.2 −55 °C C, CAPACITANCE (pF) V, VOLTAGE (V) 0.8 100 Cob 10 1000 25°C 150°C 0.4 VCE = 4.0 V 0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Figure 7. VBE(on) Voltage Figure 8. Capacitance f t , CURRENT−GAIN BANDWIDTH PRODUCT 100 IC , COLLECTOR CURRENT (A) 10 0.5 ms 1.0 5.0 ms 100 ms 0.1 VCE = 10 V ftest = 1.0 MHz TA = 25°C 10 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 0.01 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECONDARY BREAKDOWN LIMIT 0.1 1.0 10 100 0.001 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 9. Current−Gain Bandwidth Product Figure 10. Active Region Safe Operating Area 2.0 PD, POWER DISSIPATION (W) 1.5 1.0 TA 0.5 There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 75 100 125 15 0 25 50 T, TEMPERATURE (°C) Figure 11. Power Derating http://onsemi.com 4 MMDJ3N03BJT 1.0 r (t) , EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.01 RθJA(t) = r(t) θJA θJA = 185°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) θJA(t) 0.01 0.1 t, TIME (seconds) 1.0 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 0.0001 0.0001 0.001 Figure 12. Thermal Response http://onsemi.com 5 MMDJ3N03BJT PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE W −X− A 8 5 B 1 S 4 0.25 (0.010) M Y M − Y− G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D G H J K M N S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C −Z− H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S STYLE 16: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER, DIE #1 BASE, DIE #1 EMITTER, DIE #2 BASE, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #2 COLLECTOR, DIE #1 COLLECTOR, DIE #1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MMDJ3N03BJT/D