MMDL301T1G
Silicon Hot-Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package.
Features
•
•
•
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage − IR = 13 nAdc (Typ)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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30 VOLTS SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
1
CATHODE
2
ANODE
PLASTIC
SOD−323
CASE 477
STYLE 1
2
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
VR
30
V
Symbol
Max
Unit
200
1.57
mW
mW/°C
Reverse Voltage
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) @TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction−to−Ambient
RqJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
MARKING DIAGRAM
4T M G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
V
Total Capacitance
(VR = 15 V, f = 1.0 MHz) Figure 1
CT
−
0.9
1.5
pF
Reverse Leakage
(VR = 25 V) Figure 3
IR
−
13
200
nAdc
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
−
0.38
0.45
Vdc
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
−
0.52
0.6
Vdc
Reverse Breakdown Voltage
(IR = 10 mA)
© Semiconductor Components Industries, LLC, 2010
September, 2010− Rev. 2
1
4T
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMDL301T1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMDL301T1/D
MMDL301T1G
TYPICAL ELECTRICAL CHARACTERISTICS
500
2.8
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 1. Total Capacitance
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
20
Figure 2. Minority Carrier Lifetime
10
TA = 100°C
1.0
75°C
0.1
25°C
0.01
0.001
10
10
TA = -40°C
TA = 85°C
1.0
TA = 25°C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 3. Reverse Leakage
IF(PEAK)
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
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2
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
1.2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
STYLE 1
SOD−323
CASE 477−02
ISSUE H
2
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
A3
A
C
NOTE 3
DATE 13 MAR 2007
1
STYLE 2
L
A1
NOTE 5
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
XX M
0.63
0.025
STYLE 1
0.83
0.033
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DESCRIPTION:
98ASB17533C
SOD−323
STYLE 2
XX = Specific Device Code
M = Date Code
1.60
0.063
DOCUMENT NUMBER:
XX M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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