MMFT2406T1
Power MOSFET
700 mA, 240 V, N−Channel, SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• High Voltage − 240 Vdc
• Low Drive Requirement
• The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
• Pb−Free Packages are Available
http://onsemi.com
700 mA, 240 V
RDS(on) = 6.0 W
N−Channel
D
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
Rating
VDS
240
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
ID
700
mAdc
Total Power Dissipation @ TA = 25°C (Note 1)
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−65 to
150
°C
Operating and Storage Temperature Range
4
1
2
TO−223
CASE 318E
STYLE 3
T2406
AWW
3
A
WW
THERMAL CHARACTERISTICS
Rating
MARKING
DIAGRAM
= Assembly Location
= Work Week
Symbol
Value
Unit
PIN ASSIGNMENT
Thermal Resistance − Junction−to−Ambient
(surface mounted) (Note 1)
RqJA
83.3
°C/W
4 Drain
Lead Temperature for Soldering Purposes,
1/16″ from case
Time in Solder Bath
TL
260
°C
10
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in
x 0.059 in; mounting pad for the collector lead min. 0.93 sq in.
1
Gate
2
Drain
3
Source
ORDERING INFORMATION
Device
Package
Shipping†
MMFT2406T1
SOT−223
1000 Tape & Reel
MMFT2406T1G
SOT−223
(Pb−Free)
1000 Tape & Reel
MMFT2406T3
SOT−223
4000 Tape & Reel
MMFT2406T3G
SOT−223
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MMFT2406T1/D
MMFT2406T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
V(BR)DSS
240
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 120 V, VGS = 0)
IDSS
−
10
mAdc
Gate−Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
−
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.0
Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.5 Vdc, ID = 0.1 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
−
−
10
6.0
Drain−to−Source On−Voltage
(VGS = 10 V, ID = 0.5 A)
VDS(on)
−
3.0
Vdc
gFS
300
−
mmhos
Ciss
−
125
pF
Coss
−
50
Crss
−
20
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0, ID = 100 mA)
ON CHARACTERISTICS (Note 2)
Forward Transconductance
(VDS = 6.0 V, ID = 0.5 A)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
MMFT2406T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
1
2
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
B
3
D
L
G
J
C
0.08 (0003)
M
H
K
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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3
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For additional information, please contact your
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MMFT2406T1/D
