MMJT350T1_06

MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com • High Collector−Emitter Sustaining Voltage − • • • • VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain − hFE = 30−240 @ IC = 50 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 2.75 WATTS C 2,4 B1 E3 Schematic 4 1 2 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW T350 G G A = Assembly Location Y = Year W = Work Week G = Pb−Free Package T350 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device MMJT350T1 MMJT350T1G Package SOT−223 SOT−223 (Pb−Free) Shipping † 1000 / Tape & Reel 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 2 Publication Order Number: MMJT350T1/D MMJT350T1 ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎ ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î ÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol VCEO VCB VEB IC Value 300 300 3.0 Unit Vdc Vdc Vdc Adc Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous − Peak 0.5 0.75 Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Operating and Storage Junction Temperature Range PD 2.75 22 1.40 0.65 W mW/°C W W °C TJ, Tstg – 55 to + 150 THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA RqJA TL Max 45 85 190 Unit Thermal Resistance, − Junction−to−Case − Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material − Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds °C/W 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0 Adc) Collector−Base Current (VCB = Rated VCBO, VEB = 0) Emitter Cut−off Current (VBE = 5.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE 30 20 240 − − VCEO(SUS) ICBO IEBO 300 − − − 100 100 Vdc mAdc mAdc Symbol Min Max Unit http://onsemi.com 2 MMJT350T1 200 TJ = 150°C 25°C −55 °C 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 30 20 0.4 IC/IB = 10 VCE = 2.0 V VCC = 10 V 20 30 50 70 100 200 300 500 0.2 VCE(sat) 0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5.0 200 300 500 10 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “On” Voltages θV, TEMPERATURE COEFFICIENTS (mV/°C) IC, COLLECTOR CURRENT (mA) 1000 700 500 300 200 100 70 50 30 20 10 20 1.0 ms dc +1.2 +0.8 +0.4 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 5.0 7.0 10 qVB for VBE −55 °C to +25°C 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 *qVC for VCE(sat) *APPLIES FOR IC/IB < hFE/4 +100 °C to +150°C +25 °C to +100°C 100 ms −55 °C to +25°C +25 °C to +150°C 500 ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C SECOND BREAKDOWN LIMITED 30 50 70 100 200 300 400 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. Active−Region Safe Operating Area Figure 4. Temperature Coefficients There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150°C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 4.0 PD , POWER DISSIPATION (WATTS) 3.0 TC 2.0 1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 5. Power Derating http://onsemi.com 3 MMJT350T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE A 0.08 (0003) A1 q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° L1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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