MMPQ2907
MMPQ2907
E1
B1
E2
B2
E3
B3
E4
SOIC-16
pin #1 C1
B4
C2
C1
C3
C2
C4
C4
C3
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
600
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
MMPQ2907
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
MMPQ2907, Rev A
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
IC = 10 mA, IB = 0
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IC = 10 µA, IE = 0
60
V
IE = 10 µA, IC = 0
5.0
IEBO
Emitter Cutoff Current
VEB = 30 V
50
nA
ICBO
Collector Cutoff Current
VCB = 30 V
50
nA
V
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 300 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V*
IC = 150 mA, IB = 15 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA*
IC = 300 mA, IB = 30 mA
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
75
100
30
50
300
0.4
1.6
1.3
2.6
V
V
V
V
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Pulsed Current Gain
vs Collector Current
VCE = 5V
β = 10
0.4
125 °C
0.3
300
200
25 °C
100
- 40 °C
0
0.1
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
500
400
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
0.3
25 °C
0.2
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
125 ºC
0.1
300
0
- 40 ºC
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
MMPQ2907
PNP General Purpose Amplifier
(continued)
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
- 40 ºC
25 °C
0.6
125 ºC
0.4
β = 10
0.2
0
1
10
100
I C - COLLECTOR CURRENT (mA)
500
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT - BASE EMITTER VOLTAGE (V)
Typical Characteristics
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
125 ºC
0.4
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Input and Output Capacitance
vs Reverse Bias Voltage
100
20
V CB = 35V
CAPACITANCE (pF)
ICBO- COLLECTOR CURRENT (nA)
VCE = 5V
0.2
Collector-Cutoff Current
vs. Ambient Temperature
10
1
0.1
0.01
25
50
75
100
TA - AMBIENT TEMPERATURE ( º C)
16
12
C ib
8
4
0
0.1
125
Switching Times
vs Collector Current
250
I B1 = I B2 =
200
1
10
REVERSE BIAS VOLTAGE (V)
500
Ic
I B1 = I B2 =
10
400
50
Ic
10
TIME (nS)
V cc = 15 V
ts
150
100
tr
tf
50
300
200
t off
100
td
0
10
C ob
Turn On and Turn Off Times
vs Collector Current
V cc = 15 V
TIME (nS)
25 °C
0.6
100
I C - COLLECTOR CURRENT (mA)
t on
1000
0
10
100
I C - COLLECTOR CURRENT (mA)
1000
MMPQ2907
PNP General Purpose Amplifier
(continued)
(continued)
Rise Time vs Collector
and Turn On Base Currents
Power Dissipation vs
Ambient Temperature
1
50
PD - POWER DISSIPATION (W)
I B1 - TURN 0N BASE CURRENT (mA)
Typical Characteristics
20
SOT-223
0.75
10
t r = 15 V
5
30 ns
0.5
SOT-23
0.25
2
60 ns
1
10
TO-92
100
I C - COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
o
TEMPERATURE ( C)
Test Circuits
30 V
200 W
W
1.0 KW
0
- 16 V
50 W
£ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
- 6.0 V
15 V
1 KW
W
37 W
W
1.0 KW
0
- 30 V
50 W
£ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
125
150
MMPQ2907
PNP General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1
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