MMSD701T1

SOD-123 Schottky Barrier Diodes MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, www.onsemi.com The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. SOD−123 CASE 425 STYLE 1 Features • • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Reverse Voltage MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G Symbol VR Value 1 Unit Vdc 30 70 M G Forward Current (DC) Continous IF Forward Power Dissipation TA = 25°C PF 200 mA Junction Temperature TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C mW 225 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Anode MARKING DIAGRAM xx MAXIMUM RATINGS Rating 1 Cathode XXX MG G = Specific Device Code XT = MMSD301T1G SMMSD301T1G XH = MMSD701T1G SMMSD701T1G = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MMSD301T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SMMSD301T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSD701T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SMMSD701T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 August, 2020 − Rev. 7 1 Publication Order Number: MMSD301T1/D MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G V(BR)R Diode Capacitance (VR = 0 V, f = 1.0 MHz) MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G CT Total Capacitance (VR = 15 V, f = 1.0 MHz) MMSD301T1G, SMMSD301T1G (VR = 20 V, f = 1.0 MHz) MMSD701T1G, SMMSD701T1G CT Reverse Leakage (VR = 25 V) MMSD301T1G, SMMSD301T1G (VR = 35 V) MMSD701T1G, SMMSD701T1G IR Forward Voltage (IF = 1.0 mAdc) MMSD301T1G, SMMSD301T1G (IF = 10 mA) (IF = 1.0 mAdc) MMSD701T1G, SMMSD701T1G (IF = 10 mA) VF Min Unit − − − − pF − − 2 Max V 30 70 www.onsemi.com Typ 0.9 0.5 1.5 1.0 pF − 0.9 1.5 − 0.5 1.0 nAdc − 13 200 − 9.0 200 Vdc − − 0.38 0.52 0.45 0.6 − − 0.42 0.7 0.5 1.0 MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, TYPICAL CHARACTERISTICS MMSD301T1G, SMMSD301T1G 2.8 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMSD301T1 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 20 10 Figure 1. Total Capacitance 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 1.8 2.0 Figure 2. Minority Carrier Lifetime 10 TA = 100°C 1.0 TA = 75°C 0.1 TA = 25°C 0.01 MMSD301T1 0.1 IF, FORWARD CURRENT (A) IR, REVERSE LEAKAGE ( m A) MMSD301T1 0.001 TA = -40°C TA = 85°C 0.01 0.001 TA = 25°C 0.0001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 0.2 30 Figure 3. Reverse Leakage 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage www.onsemi.com 3 MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, TYPICAL CHARACTERISTICS MMSD701T1G, SMMSD701T1G 2.0 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMSD701T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 MMSD701T1 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 Figure 5. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Minority Carrier Lifetime 10 100 MMSD701T1 MMSD701T1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( m A) 20 TA = 100°C 1.0 TA = 75°C 0.1 10 TA = 85°C TA = -40°C 1.0 0.01 TA = 25°C 0.001 TA = 25°C 0.1 5 15 25 35 45 55 VR, REVERSE VOLTAGE (VOLTS) 0.2 65 Figure 7. Reverse Leakage 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage www.onsemi.com 4 1.6 2.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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