MMSD914T3

MMSD914, SMMSD914 Switching Diode, High Speed, 100 V Features • • • • • SOD−123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com SOD−123 CASE 425 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc 1.0 2.0 A A Peak Forward Surge Current Non−repetitive Peak Forward Surge Current Pulse Width =1 second Pulse Width =1 micro second Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1 5D M G 5D M G G 2 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic 2 ANODE MARKING DIAGRAM IFSM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C 1 CATHODE Symbol Max Unit PD 425 mW 3.4 RqJA TJ, Tstg mW/°C °C/W 290 −55 to +150 °C 1. FR−5 = 1.0oz Cu, 1.0inz pad ORDERING INFORMATION Device Package Shipping† MMSD914T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SMMSD914T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSD914T3G SOD−123 10,000 / Tape & Reel (Pb−Free) SMMSD914T3G SOD−123 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 11 1 Publication Order Number: MMSD914T1/D MMSD914, SMMSD914 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 − Vdc − − 25 5.0 nAdc mAdc OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Forward Voltage (IF = 10 mAdc) VF − 1000 mVdc Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) CD − 4.0 pF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr − 4.0 ns 820 W +10 V 2k 100 mH 0.1 mF tr IF 0.1 mF tp t IF trr 10% t DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) MMSD914, SMMSD914 100 10 I R, REVERSE CURRENT (A) μ 10 TA = 85°C TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 0 10 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 40 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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