MMSZ4702ET3G

MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Features          500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* SOD−123 CASE 425 STYLE 1 1 Cathode MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds xxx M G G (Note: Microdot may be in either location) MAXIMUM RATINGS Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL  25C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75C Derated above 75C PD 500 6.7 mW mW/C Thermal Resistance, (Note 3) Junction−to−Ambient RqJA Thermal Resistance, (Note 3) Junction−to−Lead RqJL Junction and Storage Temperature Range 1 xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 Rating 2 Anode TJ, Tstg ORDERING INFORMATION Package Shipping† MMSZ4xxxET1G SOD−123 (Pb−Free) 3,000 / Tape & Reel SZMMSZ4xxxET1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSZ4xxxET3G SOD−123 (Pb−Free) 10,000 / Tape & Reel Device C/W 340 C/W 150 −55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11. 2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. 3. Thermal Resistance measurement obtained via infrared Scan Method. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 6 1 Publication Order Number: MMSZ4678ET1/D MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 1) VZ (V) Leakage Current @ IZT IR @ VR Device Marking Min Nom Max mA mA V MMSZ4680ET1G CF8 2.09 2.2 2.31 50 4 1 MMSZ4684ET1G CG3 3.13 3.3 3.47 50 7.5 1.5 MMSZ4688ET1G CG7 4.47 4.7 4.94 50 10 3 MMSZ4689ET1G CG8 4.85 5.1 5.36 50 10 3 MMSZ4690ET1G CG9 5.32 5.6 5.88 50 10 4 MMSZ4691ET1G CH1 5.89 6.2 6.51 50 10 5 MMSZ4692ET1G CH2 6.46 6.8 7.14 50 10 5.1 MMSZ4693ET1G CH3 7.13 7.5 7.88 50 10 5.7 MMSZ4697ET1G CH7 9.50 10 10.50 50 1 7.6 MMSZ4699ET1G CH9 11.40 12 12.60 50 0.05 9.1 MMSZ4701ET1G CJ2 13.3 14 14.7 50 0.05 10.6 MMSZ4702ET1G CJ3 14.25 15 15.75 50 0.05 11.4 MMSZ4703ET1G CJ4 15.20 16 16.80 50 0.05 12.1 MMSZ4705ET1G CJ6 17.10 18 18.90 50 0.05 13.6 MMSZ4709ET1G CK1 22.80 24 25.20 50 0.01 18.2 MMSZ4711ET1G CK3 25.65 27 28.35 50 0.01 20.4 MMSZ4717ET1G CK9 40.85 43 45.15 50 0.01 32.6 Device* 1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C. *Include SZ-prefix devices where applicable. http://onsemi.com 2 MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series 8 100 7  VZ, TEMPERATURE COEFFICIENT (mV/C)  VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 11 10 10 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range − 55C to +150C) 1000 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 25 50 75 100 T, TEMPERATURE (C) RECTANGULAR WAVEFORM, TA = 25C 125 10 1 150 0.1 Figure 3. Steady State Power Derating 1 1000 1000 TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) IZ = 1 mA 100 75 V (MMSZ5267BT1G) 91 V (MMSZ5270BT1G) 100 5 mA 20 mA 10 10 150C 1 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE (  ) 100 VZ, NOMINAL ZENER VOLTAGE (V) Ppk , PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) VZ @ IZT 1 12 1.2 0 TYPICAL TC VALUES 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 3 1.1 1.2 MMSZ4xxxET1G Series, SZMMSZ4xxxET1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT ( m A) TA = 25C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150C 0.1 0.01 0.001 + 25C 0.0001 −55C 0.00001 0 10 Figure 7. Typical Capacitance Figure 8. Typical Leakage Current I Z, ZENER CURRENT (mA) TA = 25C 10 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 TA = 25C 10 1 0.1 0.01 12 100 30 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 10 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z, ZENER CURRENT (mA) 80 100 100 0.01 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (ms) Figure 11. 8  20 ms Pulse Waveform http://onsemi.com 4 80 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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