MMSZ4703ET1

MMSZ4678ET1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. Features http://onsemi.com • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) Pb−Free Packages are Available 1 1 Cathode 2 Anode 2 SOD−123 CASE 425 STYLE 1 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Total Power Dissipation on FR−5 Board, (Note 2) @ TL = 75°C Derated above 75°C Thermal Resistance, (Note 3) Junction−to−Ambient Thermal Resistance, (Note 3) Junction−to−Lead Junction and Storage Temperature Range Symbol Ppk PD 500 6.7 RqJA RqJL TJ, Tstg 340 150 −55 to +150 mW mW/°C °C/W °C/W °C Max 225 Unit W MARKING DIAGRAM 1 xxx M G G xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMSZ4xxxET1 MMSZ4xxxET1G MMSZ4xxxET3 MMSZ4xxxET3G Package SOD−123 SOD−123 (Pb−Free) SOD−123 SOD−123 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 11. 2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. 3. Thermal Resistance measurement obtained via infrared Scan Method. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 August, 2005 − Rev. 4 Publication Order Number: MMSZ4678ET1/D MMSZ4678ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT IR VR IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF VZ VR IR VF IZT V I IF Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 1) Device Marking CG3 CG7 CG8 CG9 CH1 CH2 CH3 CH7 CH9 CJ2 CJ3 CJ4 CJ6 CK1 CK3 CK9 VZ (V) Min 3.13 4.47 4.85 5.32 5.89 6.46 7.13 9.50 11.40 13.3 14.25 15.20 17.10 22.80 25.65 40.85 Nom 3.3 4.7 5.1 5.6 6.2 6.8 7.5 10 12 14 15 16 18 24 27 43 Max 3.47 4.94 5.36 5.88 6.51 7.14 7.88 10.50 12.60 14.7 15.75 16.80 18.90 25.20 28.35 45.15 @ IZT mA 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 mA 7.5 10 10 10 10 10 10 1 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 Leakage Current I R @ VR V 1.5 3 3 4 5 5.1 5.7 7.6 9.1 10.6 11.4 12.1 13.6 18.2 20.4 32.6 Device* MMSZ4684ET1 MMSZ4688ET1, G MMSZ4689ET1, G MMSZ4690ET1 MMSZ4691ET1 MMSZ4692ET1 MMSZ4693ET1 MMSZ4697ET1 MMSZ4699ET1 MMSZ4701ET1, G MMSZ4702ET1, G MMSZ4703ET1 MMSZ4705ET1 MMSZ4709ET1 MMSZ4711ET1 MMSZ4717ET1 1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. *The “G’’ suffix indicates Pb−Free package available. http://onsemi.com 2 MMSZ4678ET1 Series TYPICAL CHARACTERISTICS 8 7 6 5 4 3 2 1 0 −1 −2 −3 2 VZ @ IZT TYPICAL TC VALUES 100 TYPICAL TC VALUES θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° θ VZ , TEMPERATURE COEFFICIENT (mV/ C) ° VZ @ IZT 10 3 4 5 6 7 8 9 10 11 12 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1.2 PD, POWER DISSIPATION (WATTS) 1.0 0.8 0.6 0.4 0.2 0 PD versus TL 1000 Ppk , PEAK SURGE POWER (WATTS) RECTANGULAR WAVEFORM, TA = 25°C 100 PD versus TA 10 0 25 50 75 100 T, TEMPERATURE (°C) 125 150 1 0.1 1 10 100 PW, PULSE WIDTH (ms) 1000 Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE (Ω ) IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 100 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 0.5 75°C 25°C 0°C 1.1 1.2 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 5. Effect of Zener Voltage on Zener Impedance Figure 6. Typical Forward Voltage http://onsemi.com 3 MMSZ4678ET1 Series TYPICAL CHARACTERISTICS 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 TA = 25°C 1000 I R , LEAKAGE CURRENT (m A) 100 10 1 0.1 +150°C 0.01 + 25°C −55°C 0 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 0.001 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.00001 Figure 7. Typical Capacitance 100 I Z, ZENER CURRENT (mA) I Z, ZENER CURRENT (mA) TA = 25°C 10 100 Figure 8. Typical Leakage Current TA = 25°C 10 1 1 0.1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 12 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 20 40 tP tr Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms 60 80 t, TIME (ms) Figure 11. 8 × 20 ms Pulse Waveform http://onsemi.com 4 MMSZ4678ET1 Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D A A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b c D E HE L MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− HE 2.36 0.093 4.19 0.165 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ 2 1 E L C STYLE 1: PIN 1. CATHODE 2. ANODE b SOLDERING FOOTPRINT* 0.91 0.036 1.22 0.048 SCALE 10:1 mm inches MMSZ4678ET1/D