MMSZ4V3T1G

MMSZxxxT1G Series, SZMMSZxxxT1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. www.onsemi.com Features • • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* SOD−123 CASE 425 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 xx M G G 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 xx M G MAXIMUM RATINGS Rating Total Power Dissipation on FR−5 Board, (Note 1) @ TL = 75°C Derated above 75°C = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Symbol PD Max Unit 500 6.7 mW mW/°C ORDERING INFORMATION Device Package Shipping† Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 340 °C/W MMSZxxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel Thermal Resistance, Junction−to−Lead (Note 2) RqJL 150 °C/W SZMMSZxxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel TJ, Tstg −55 to +150 °C MMSZxxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel SZMMSZxxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 3.5 X 1.5 inches. 2. Thermal Resistance measurement obtained via infrared Scan Method. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 August, 2019 − Rev. 12 1 See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Publication Order Number: MMSZ2V4T1/D MMSZxxxT1G Series, SZMMSZxxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (Volts) (Notes 3 and 4) ZZT1 (Note 5) VZ2 (Volts) (Notes 3 and 4) @ IZT1 = 5 mA ZZT2 (Note 5) Max Reverse Leakage Current @ IZT2 = 1 mA IR @ VR Device Marking Min Nom Max W Min Max W mA Volts MMSZ2V4T1G T1 2.28 2.4 2.52 100 1.7 2.1 600 50 1 MMSZ2V7T1G T2 2.57 2.7 2.84 100 1.9 2.4 600 20 1 MMSZ3V0T1G T3 2.85 3.0 3.15 95 2.1 2.7 600 10 1 MMSZ3V3T1G T4 3.14 3.3 3.47 95 2.3 2.9 600 5 1 MMSZ3V6T1G T5 3.42 3.6 3.78 90 2.7 3.3 600 5 1 MMSZ3V9T1G U1 3.71 3.9 4.10 90 2.9 3.5 600 3 1 MMSZ4V3T1G U2 4.09 4.3 4.52 90 3.3 4.0 600 3 1 Device* MMSZ4V7T1G U3 4.47 4.7 4.94 80 3.7 4.7 500 3 2 MMSZ5V1T1G U4 4.85 5.1 5.36 60 4.2 5.3 480 2 2 MMSZ5V6T1G/T3G U5 5.32 5.6 5.88 40 4.8 6.0 400 1 2 MMSZ6V2T1G V1 5.89 6.2 6.51 10 5.6 6.6 150 3 4 MMSZ6V8T1G V2 6.46 6.8 7.14 15 6.3 7.2 80 2 4 MMSZ7V5T1G V3 7.13 7.5 7.88 15 6.9 7.9 80 1 5 MMSZ8V2T1G V4 7.79 8.2 8.61 15 7.6 8.7 80 0.7 5 MMSZ9V1T1G V5 8.65 9.1 9.56 15 8.4 9.6 100 0.5 6 MMSZ10T1G/T3G A1 9.50 10 10.50 20 9.3 10.6 150 0.2 7 MMSZ11T1G A2 10.45 11 11.55 20 10.2 11.6 150 0.1 8 MMSZ12T1G A3 11.40 12 12.60 25 11.2 12.7 150 0.1 8 MMSZ13T1G A4 12.35 13 13.65 30 12.3 14.0 170 0.1 8 MMSZ15T1G A5 14.25 15 15.75 30 13.7 15.5 200 0.05 10.5 MMSZ16T1G X1 15.20 16 16.80 40 15.2 17.0 200 0.05 11.2 MMSZ18T1G/T3G X2 17.10 18 18.90 45 16.7 19.0 225 0.05 12.6 MMSZ20T1G X3 19.00 20 21.00 55 18.7 21.1 225 0.05 14 MMSZ22T1G X4 20.90 22 23.10 55 20.7 23.2 250 0.05 15.4 MMSZ24T1G X5 22.80 24 25.20 70 22.7 25.5 250 0.05 16.8 3. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 4. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. *Include SZ-prefix devices where applicable. www.onsemi.com 2 MMSZxxxT1G Series, SZMMSZxxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (Volts) (Notes 6 and 7) ZZT1 (Note 8) @ IZT1 = 2 mA Device Marking Min Nom Max MMSZ27T1G/T3G Y1 25.65 27 MMSZ30T1G Y2 28.50 MMSZ33T1G Y3 31.35 MMSZ36T1G Y4 MMSZ39T1G Y5 MMSZ43T1G MMSZ47T1G VZ2 (Volts) (Notes 6 and 7) ZZT2 (Note 8) Max Reverse Leakage Current @ IZT2 = 0.1 mA @ IZT2 = 0.5 mA IR @ VR W Min Max W mA Volts 28.35 80 25 28.9 300 0.05 18.9 30 31.50 80 27.8 32 300 0.05 21 33 34.65 80 30.8 35 325 0.05 23.1 34.20 36 37.80 90 33.8 38 350 0.05 25.2 37.05 39 40.95 130 36.7 41 350 0.05 27.3 Z1 40.85 43 45.15 150 39.7 46 375 0.05 30.1 Z2 44.65 47 49.35 170 43.7 50 375 0.05 32.9 MMSZ51T1G Z3 48.45 51 53.55 180 47.6 54 400 0.05 35.7 MMSZ56T1G/T3G Z4 53.20 56 58.80 200 51.5 60 425 0.05 39.2 Device* 6. The type numbers shown have a standard tolerance of ±5% on the nominal Zener Voltage. 7. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 8. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. *Include SZ-prefix devices where applicable. www.onsemi.com 3 MMSZxxxT1G Series, SZMMSZxxxT1G Series 8 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES FOR MMSZxxxT1G SERIES, SZMMSZxxxT1G SERIES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 11 VZ @ IZT 10 10 100 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) Ppk , PEAK SURGE POWER (WATTS) 1000 1.0 PD versus TL 0.8 0.6 PD versus TA 0.4 0.2 0 25 50 75 100 125 RECTANGULAR WAVEFORM, TA = 25°C 100 10 1 150 0.1 1 100 1000 PW, PULSE WIDTH (ms) Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power 1000 75 V (MMSZ5267BT1G) 91 V (MMSZ5270BT1G) IF, FORWARD CURRENT (mA) TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IZ = 1 mA 100 5 mA 20 mA 10 100 10 150°C 1 10 T, TEMPERATURE (°C) 1000 Z ZT, DYNAMIC IMPEDANCE ( Ω ) TYPICAL TC VALUES FOR MMSZxxxT1G SERIES, SZMMSZxxxT1G SERIES 1 12 1.2 0 100 1 10 100 1 0.4 0.5 75°C 0.6 25°C 0°C 0.7 0.8 0.9 1.0 VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V) Figure 5. Effect of Zener Voltage on Zener Impedance Figure 6. Typical Forward Voltage www.onsemi.com 4 1.1 1. MMSZxxxT1G Series, SZMMSZxxxT1G Series TYPICAL CHARACTERISTICS 1000 1000 0 V BIAS I R , LEAKAGE CURRENT ( μA) TA = 25°C C, CAPACITANCE (pF) 1 V BIAS 100 BIAS AT 50% OF VZ NOM 10 100 10 1 +150°C 0.1 0.01 + 25°C 0.001 − 55°C 0.0001 1 1 10 100 0.00001 0 10 20 30 40 50 60 VZ, NOMINAL ZENER VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Typical Leakage Current TA = 25°C I Z , ZENER CURRENT (mA) TA = 25°C I Z , ZENER CURRENT (mA) 80 100 100 10 1 0.1 0.01 70 VZ, NOMINAL ZENER VOLTAGE (V) 0 2 4 6 8 10 12 10 1 0.1 0.01 10 30 50 70 90 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) www.onsemi.com 5 90 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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