MMSZ5237ET1

MMSZ5237ET1

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOD123

  • 描述:

    DIODE ZENER 8.2V 500MW SOD123

  • 数据手册
  • 价格&库存
MMSZ5237ET1 数据手册
MMSZ52xxET1 Series, SZMMSZ52xxET1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com 1 Cathode Features • • • • • • • • • • 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 2.4 V to 110 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications General Purpose, Medium Current ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power − 225 W (8 x 20 ms) AEC−Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 2 Anode SOD−123 CASE 425 STYLE 1 2 1 MARKING DIAGRAM 1 xxx M G G xxx = Device Code (Refer to page 2) M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 ORDERING INFORMATION MAXIMUM RATINGS Rating Package Shipping† MMSZ52xxET1 SOD−123 3000 / Tape & Reel MMSZ52xxET1G SOD−123 (Pb−Free) 3000 / Tape & Reel SZMMSZ52xxET1G SOD−123 (Pb−Free) 3000 / Tape & Reel Device Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL ≤ 25°C Ppk 225 W Total Power Dissipation on FR−5 Board, (Note 3) @ TL = 75°C Derated above 75°C PD 500 6.7 mW mW/°C Thermal Resistance, (Note 2) Junction−to−Ambient RqJA 340 °C/W MMSZ52xxET3 SOD−123 10000 / Tape & Reel Thermal Resistance, (Note 2) Junction−to−Lead RqJL 150 °C/W MMSZ52xxET3G SOD−123 (Pb−Free) 10000 / Tape & Reel TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11. 2. Thermal Resistance measurement obtained via infrared Scan Method. 3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 7 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Publication Order Number: MMSZ5221ET1/D MMSZ52xxET1 Series, SZMMSZ52xxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Notes 4 and 5) VZ (V) Zener Impedance (Note 6) Leakage Current @ IZT ZZT @ IZT Max mA W W mA mA V 2.4 2.52 20 30 1200 0.25 100 1 2.57 2.7 2.84 20 30 1300 0.25 75 1 CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1 CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1 MMSZ5229ET1 CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1 MMSZ5231ET1 CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2 MMSZ5232ET1 CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMSZ5234ET1 CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4 SZ/MMSZ5235ET1 CB6 6.46 6.8 7.14 20 5 750 0.25 3 5 MMSZ5236ET1 CB7 7.13 7.5 7.88 20 6 500 0.25 3 6 SZ/MMSZ5237ET1 CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMSZ5240ET1 CC2 9.50 10 10.50 20 17 600 0.25 3 8 SZ/MMSZ5242ET1 CC4 11.40 12 12.60 20 30 600 0.25 1 9.1 MMSZ5243ET1 CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 SZ/MMSZ5244ET1 CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10 SZ/MMSZ5245ET1 CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11 SZ/MMSZ5246ET1 CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMSZ5248ET1 CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14 MMSZ5250ET1 CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15 SZ/MMSZ5252ET1 CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18 Device Marking Min Nom MMSZ5221ET1 CA1 2.28 MMSZ5223ET1 CA3 MMSZ5226ET1 MMSZ5228ET1 Device* ZZK @ IZK 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C $1°C. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1. http://onsemi.com 2 IR @ VR MMSZ52xxET1 Series, SZMMSZ52xxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Notes 4 and 5) VZ (V) Zener Impedance (Note 6) @ IZT ZZT @ IZT ZZK @ IZK Leakage Current IR @ VR Device Marking Min Nom Max mA W W mA mA V MMSZ5253ET1 CD6 23.75 25 26.25 5.0 35 600 0.25 0.1 19 SZ/MMSZ5254ET1 CD7 25.65 27 28.35 4.6 41 600 0.25 0.1 21 SZ/MMSZ5255ET1 CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21 SZ/MMSZ5256ET1 CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23 SZ/MMSZ5257ET1 CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMSZ5258ET1 CE2 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMSZ5259ET1 CE3 37.05 39 40.95 3.2 80 800 0.25 0.1 30 MMSZ5262ET1 CE6 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 MMSZ5263ET1 CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 Device* 4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage. 5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C $1°C. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1. http://onsemi.com 3 MMSZ52xxET1 Series, SZMMSZ52xxET1G Series qVZ, TEMPERATURE COEFFICIENT (mV/°C) qVZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS 8 100 7 TYPICAL TC VALUES FOR MMSZ5221BT1 SERIES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES FOR MMSZ5221BT1 SERIES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 Ppk, PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 0 25 RECTANGULAR WAVEFORM, TA = 25°C 50 75 100 T, TEMPERATURE (°C) 125 10 1 150 Figure 3. Steady State Power Derating 1 1000 1000 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) IZ = 1 mA 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 10 150°C 1 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 ZZT, DYNAMIC IMPEDANCE (W) 0.1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0°C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZ52xxET1 Series, SZMMSZ52xxET1G Series TYPICAL CHARACTERISTICS TA = 25°C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) IR, LEAKAGE CURRENT (mA) 1000 100 BIAS AT 50% OF VZ NOM 10 1 1 100 10 VZ, NOMINAL ZENER VOLTAGE (V) 1000 100 10 1 +150°C 0.1 0.01 0.001 + 25°C 0.0001 −55°C 0.00001 0 10 Figure 7. Typical Capacitance IZ, ZENER CURRENT (mA) 10 1 0.1 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 100 30 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 10 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 20 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT IZ, ZENER CURRENT (mA) TA = 25°C TA = 25°C 0 80 Figure 8. Typical Leakage Current 100 100 0.01 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 40 60 t, TIME (ms) Figure 11. 8 × 20 ms Pulse Waveform http://onsemi.com 5 80 90 MMSZ52xxET1 Series, SZMMSZ52xxET1G Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G D ÂÂÂÂ ÂÂÂÂ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L q E 2 MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° STYLE 1: PIN 1. CATHODE 2. ANODE q L b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° C SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMSZ5221ET1/D
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