MMT05A230T3G

MMT05A230T3, MMT05A260T3, MMT05A310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD http://onsemi.com These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. • High Surge Current Capability: 50 Amps 10 x 1000 µsec; for Controlled Temperature Environments in the SMA package • The MMT05A230T3 Series is used to help equipment meet various regulatory requirements including: Telcordia 1089, ITU K.20 & K.21, IEC 950 and FCC Part 68 • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation • Surface Mount Technology (SMT) • Indicates UL Registered − File #E210057 • Device Marking: MMT05A230T3: PBF; MMT05A260T3: PBG; MMT05A310T3: PBJ BIDIRECTIONAL TSPD 50 AMP SURGE 265 thru 365 VOLTS MT1 SMA (No Polarity) CASE 403D MARKING DIAGRAM xxx AYW MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Off−State Voltage − Maximum MMT05A230T3 MMT05A260T3 MMT05A310T3 VDM Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1 and 2) 8 x 20 µsec 10 x 160 µsec 10 x 560 µsec 10 x 1000 µsec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, IPK = 50 A, PW = 15
s Value xxx A Y W Unit Volts
170
200
270
150
100
70
50 di/dt
100 = Specific Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION A(pk) IPPS1 IPPS2 IPPS3 IPPS4 MT2 A/µs Device Package Shipping† MMT05A230T3 SMA 12 mm Tape and Reel (5 K/Reel) MMT05A260T3 SMA 12 mm Tape and Reel (5 K/Reel) MMT05A310T3 SMA 12 mm Tape and Reel (5 K/Reel) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 4 1 Publication Order Number: MMT05A230T3/D MMT05A230T3, MMT05A260T3, MMT05A310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Instantaneous Peak Power Dissipation (Ipk = 50A, 10x1000 µsec @ 25°C) PPK 2000 W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V) Symbol Min Typ Max MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 265 320 365 MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 280 340 400 MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 265 320 365 MMT05A230T3 MMT05A260T3 MMT05A310T3 − − − − − − 280 340 400 − 0.08 − − − − 190 240 280 − − − V(BO) Unit Volts (+65°C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kΩ, t = 0.5 cycle) (Note 3) V(BO) Volts (+65°C) Breakover Voltage Temperature Coefficient dV(BO)/dTJ Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) MMT05A230T3 MMT05A260T3 MMT05A310T3 %/°C Volts Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 µA On−State Voltage (IT = 1.0 A) (PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3) VT − 1.53 3.0 Volts Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ) Both polarities IBO − 230 − mA Holding Current (Both polarities) VS = 500 Volts; IT (Initiating Current) =
1.0 Amp IH 150 340 − mA dv/dt 2000 − − V/µs CO − − 22 35 − 50 pF (Note 3) Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal) 3. Measured under pulse conditions to reduce heating. http://onsemi.com 2 MMT05A230T3, MMT05A260T3, MMT05A310T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM IH ID1 VD2 V(BR) 340 V BR , BREAKDOWN VOLTAGE (VOLTS) I D1, OFF−STATE CURRENT (µ A) I(BO) ID2 + Voltage VD1 100 VD1 = 50V 10 1 0.1 0.01 V(BO) 0 20 40 60 80 100 TEMPERATURE (°C) 120 320 300 MMT05A260T3 260 240 MMT05A230T3 220 200 180 160 −2 0 140 MMT05A310T3 280 Figure 1. Off−State Current versus Temperature −10 0 10 20 30 40 TEMPERATURE (°C) 50 60 Figure 2. Typical Breakdown Voltage versus Temperature http://onsemi.com 3 70 MMT05A230T3, MMT05A260T3, MMT05A310T3 800 MMT05A310T3 320 300 I H , HOLDING CURRENT (mA) V BO , BREAKOVER VOLTAGE (VOLTS) 340 MMT05A260T3 280 260 MMT05A230T3 240 220 200 700 600 500 400 300 200 180 160 −2 0 − 10 10 20 40 30 TEMPERATURE (°C) 0 50 60 100 70 −2 0 Figure 3. Typical Breakover Voltage versus Temperature −10 0 10 30 40 20 TEMPERATURE (°C) 50 60 70 Figure 4. Typical Holding Current versus Temperature Peak Value 100 CURRENT (A) Ipp − PEAK PULSE CURRENT − %Ipp 100 tr = rise time to peak value tf = decay time to half value Half Value 50 1 0.001 0 0 tr 10 tf TIME (
s) Figure 5. Exponential Decay Pulse Waveform 0.01 1 0.1 TIME (sec) 10 100 Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 4 MMT05A230T3, MMT05A260T3, MMT05A310T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 5 TELECOM EQUIPMENT MMT05A230T3, MMT05A260T3, MMT05A310T3 PACKAGE DIMENSIONS SMA CASE 403D−02 ISSUE A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02. A D DIM A B C D H J K S B POLARITY INDICATOR OPTIONAL AS NEEDED INCHES MIN MAX 0.160 0.180 0.090 0.115 0.075 0.095 0.050 0.064 0.002 0.006 0.006 0.016 0.030 0.060 0.190 0.220 MILLIMETERS MIN MAX 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.05 0.15 0.15 0.41 0.76 1.52 4.83 5.59 C J K H SOLDERING FOOTPRINT* 0.157 4.0 0.0787 2.0 inches 0.0787 2.0 mm *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. MMT05A230T3/D