MMT08B260T3G

MMT08B260T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. http://onsemi.com BIDIRECTIONAL TSPD ( ) 80 AMP SURGE, 260 VOLTS Features • High Surge Current Capability: 80 Amps 10 x 1000 msec, for • • • • • • • • MT1 Controlled Temperature Environments The MMT08B260T3 is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation Surface Mount Technology (SMT) Indicates UL Registered − File #E210057 Pb−Free Package is Available MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C MARKING DIAGRAM AYWW RPCG G G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Off−State Voltage − Maximum Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (−25°C Initial Temperature) (Notes 1 & 2) 2 x 10 msec 8 x 20 msec 10 x 160 msec 10 x 360 msec 10 x 560 msec 10 x 700 msec 10 x 1000 msec Symbol Value Unit VDM ±200 V A(pk) IPPS1 IPPS2 IPPS3 IPPS4 IPPS5 IPPS6 IPPS7 ±250 ±250 ±150 ±150 ±100 ±100 ±80 Non−Repetitive Peak On−State Current 60 Hz Full Sign Wave ITSM 32 A(pk) Maximum Non−Repetitive Rate of Change of On−State Current Exponential Waveform, Ipk < 100A di/dt ±300 A/ms ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 3 A = Assembly Location Y = Year WW = Work Week RPCG = Device Code G = Pb−Free Package (Note: Microdot may be in either location) 1 Device Package Shipping † MMT08B260T3 SMB 2500 Tape & Reel MMT08B260T3G SMB 2500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MMT08B260T3/D MMT08B260T3 THERMAL CHARACTERISTICS Symbol Max Unit Operating Temperature Range Blocking or Conducting State Characteristic TJ1 −40 to + 125 °C Overload Junction Temperature − Maximum Conducting State Only TJ2 + 175 °C Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 msec @ 25°C) PPK 2000 W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Symbol Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) (+65°C) V(BO) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kW, t = 0.5 cycle) (Note 3) (+65°C) V(BO) Min Typ Max − − − − 320 340 Unit V V − − − − 320 340 dV(BO)/dTJ − 0.08 − %/°C V(BR) − 260 − V Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities ID1 ID2 − − − − 2.0 5.0 mA On−State Voltage (IT = 1.0 A) (PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3) VT − 1.53 3.0 V Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities IBO − 230 − mA Holding Current (Both polarities) (Note 3) VS = 500 Volts; IT (Initiating Current) = "1.0 Amp IH 150 − 300 − − − mA dv/dt 2000 − − V/ms CO − − 25 50 30 55 pF Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 mV rms Signal) 3. Measured under pulse conditions to reduce heating. Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol Parameter ID1, ID2 Off State Leakage Current VD1, VD2 Off State Blocking Voltage VBR Breakdown Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage VTM V(BO) IH ID1 I(BO) ID2 + Voltage VD1 http://onsemi.com 2 VD2 V(BR) MMT08B260T3 340 V BR , BREAKDOWN VOLTAGE (VOLTS) I D1, OFF−STATE CURRENT (μ A) 100 VD1 = 50V 10 1 0.1 0.01 0 20 40 60 80 100 TEMPERATURE (°C) 120 320 300 280 260 240 220 200 180 160 − 50 140 0 25 50 TEMPERATURE (°C) 75 100 125 Figure 2. Breakdown Voltage versus Temperature 380 1000 360 900 I H , HOLDING CURRENT (mA) V BO , BREAKOVER VOLTAGE (VOLTS) Figure 1. Off−State Current versus Temperature −25 340 320 300 280 260 240 800 700 600 500 400 300 200 220 200 − 50 − 25 0 25 50 TEMPERATURE (°C) 75 100 100 − 50 125 Figure 3. Breakover Voltage versus Temperature 0 −25 50 25 TEMPERATURE (°C) 100 75 125 Figure 4. Holding Current versus Temperature Peak Value 100 CURRENT (A) Ipp − PEAK PULSE CURRENT − %Ipp 100 tr = rise time to peak value tf = decay time to half value Half Value 50 1 0.001 0 0 tr 10 tf TIME (ms) Figure 5. Exponential Decay Pulse Waveform 0.01 0.1 1 TIME (sec) 10 100 Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 3 MMT08B260T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND RING HEAT COIL http://onsemi.com 4 TELECOM EQUIPMENT MMT08B260T3 PACKAGE DIMENSIONS SMB CASE 403C−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. S A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 C K P J H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMT08B260T3/D