MMT10B230T3

MMT10B230T3, MMT10B260T3, MMT10B310T3 Preferred Device Thyristor Surge Protectors High Voltage Bidirectional TSPD http://onsemi.com These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. Features BIDIRECTIONAL TSPD ( 100 AMP SURGE 265 thru 365 VOLTS MT1 MT2 ) • Outstanding High Surge Current Capability: 100 A 10x1000 msec • • • • • • • • • Guaranteed at the extended temp range of −20°C to 65°C The MMT10B230T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950, UL 1459 & 1950 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation Surface Mount Technology (SMT) Complies with GR1089 Second Level Surge Spec at 500 A 2x10 msec Waveforms Indicates UL Registered − File #E210057 Pb−Free Packages are Available SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C MARKING DIAGRAMS AYWW RPDx G G A = Assembly Location Y = Year WW = Work Week RPDx = Device Code x = F, G, or J G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 August, 2005 − Rev. 8 Publication Order Number: MMT10B230T3/D MMT10B230T3, MMT10B260T3, MMT10B310T3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Off−State Voltage − Maximum MMT10B230T3 MMT10B260T3 MMT10B310T3 Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (Notes 1 and 2) (−20°C to +65°C) 2 x 10 msec 10 x 700 msec 10 x 1000 msec Maximum Non−Repetitive Rate of Change of On−State Current Double Exponential Waveform, R = 2.0, L = 1.5 mH, C = 1.67 mF, Ipk = 110A Symbol VDM Value "170 "200 "270 A(pk) Unit V IPPS1 IPPS2 IPPS3 di/dt "500 "180 "100 "100 A/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. THERMAL CHARACTERISTICS Characteristic Operating Temperature Range Blocking or Conducting State Overload Junction Temperature − Maximum Conducting State Only Instantaneous Peak Power Dissipation (Ipk = 100 A, 10x1000 msec @ 25°C) Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol TJ1 TJ2 PPK TL Max −40 to + 125 + 175 4000 260 Unit °C °C W °C ORDERING INFORMATION Device MMT10B230T3 MMT10B230T3G MMT10B260T3 MMT10B260T3G MMT10B310T3 MMT10B310T3G Package SMB SMB (Pb−Free) SMB SMB (Pb−Free) SMB SMB (Pb−Free) (12mm) Tape & Reel 2500 Units per Reel Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MMT10B230T3, MMT10B260T3, MMT10B310T3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristic Breakover Voltage (Both polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) (+65°C) MMT10B230T3, G MMT10B260T3, G MMT10B310T3, G Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), MMT10B230T3, G RI = 1.0 kW, t = 0.5 cycle) (Note 3) MMT10B260T3, G MMT10B310T3, G (+65°C) MMT10B230T3, G MMT10B260T3, G MMT10B310T3, G Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities MMT10B230T3, G MMT10B260T3, G MMT10B310T3, G Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities On−State Voltage (IT = 1.0 A) (PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3) Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities Holding Current (Both polarities) VS = 500 Volts; IT (Initiating Current) = "1.0 A Critical Rate of Rise of Off−State Voltage (Linear waveform, VD = Rated VBR, TJ = 25°C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) 3. Measured under pulse conditions to reduce heating. (Note 3) ID1 ID2 VT IBO IH dv/dt CO V(BO) − − − − − − dV(BO)/dTJ V(BR) − − − − − − − 150 2000 − − 190 240 280 − − 1.53 260 270 − 65 160 − − − 2.0 5.0 5.0 − − − − 200 mA V mA mA V/ms pF − − − − − − − 0.08 265 320 365 290 340 400 − %/°C V − − − − − − 290 340 400 V MMT10B230T3, G MMT10B260T3, G MMT10B310T3, G Symbol V(BO) − − − − − − 265 320 365 Min Typ Max Unit V Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol ID1, ID2 VD1, VD2 VBR VBO IBO IH VTM Parameter Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage + Voltage VD1 VD2 V(BR) IH ID1 ID2 I(BO) VTM V(BO) http://onsemi.com 3 MMT10B230T3, MMT10B260T3, MMT10B310T3 100 μ I D1, OFF−STATE CURRENT ( A) VD1 = 50V 340 V BR , BREAKDOWN VOLTAGE (VOLTS) 320 300 280 260 240 220 200 180 160 − 50 − 25 0 25 50 TEMPERATURE (°C) 75 100 125 MMT10B230T3 MMT10B260T3 MMT10B310T3 10 1 0.1 0.01 0 20 40 60 80 100 TEMPERATURE (°C) 120 140 Figure 1. Off−State Current versus Temperature Figure 2. Breakdown Voltage versus Temperature 360 V BO , BREAKOVER VOLTAGE (VOLTS) I H , HOLDING CURRENT (mA) 75 340 320 300 280 260 240 220 200 180 − 50 − 25 0 25 50 TEMPERATURE (°C) 100 125 MMT10B230T3 MMT10B260T3 MMT10B310T3 1000 900 800 700 600 500 400 300 200 100 − 50 − 25 0 25 50 TEMPERATURE (°C) 75 100 125 Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature 100 Ipp − PEAK PULSE CURRENT − %Ipp 100 Peak Value tr = rise time to peak value tf = decay time to half value CURRENT (A) 10 50 Half Value 0 0 tr tf TIME (ms) 1 0.01 0.1 1 TIME (sec) 10 100 Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus Surge Current Duration, Sinusoidal Waveform http://onsemi.com 4 MMT10B230T3, MMT10B260T3, MMT10B310T3 TIP OUTSIDE PLANT GND TELECOM EQUIPMENT RING PPTC* TIP OUTSIDE PLANT GND TELECOM EQUIPMENT RING PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device HEAT COIL TIP OUTSIDE PLANT GND TELECOM EQUIPMENT RING HEAT COIL http://onsemi.com 5 MMT10B230T3, MMT10B260T3, MMT10B310T3 PACKAGE DIMENSIONS SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C−01 ISSUE A S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 D B C K P J H SOLDERING FOOTPRINT* 0.089 2.261 0.108 2.743 0.085 2.159 inches mm *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMT10B230T3/D