MMUN2111LT1

MMUN2111LT1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Features http://onsemi.com PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) R1 R2 • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Pb−Free Packages are Available MARKING DIAGRAM 3 1 2 SOT−23 CASE 318 STYLE 6 1 A6x M G G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc A6x x M G = Device Code = A − L (Refer to page 2) = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage, Temperature Range Symbol PD Max 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 508 (Note 1) 311 (Note 2) 174 (Note 1) 208 (Note 2) −55 to +150 Unit mW °C/W °C/W °C/W °C ORDERING INFORMATION Device MMUN21xxLT1 MMUN21xxLT1G MMUN21xxLT3 MMUN21xxLT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping † 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel RqJA RqJL TJ, Tstg SOT−23 10000/Tape & Reel (Pb−Free) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 August, 2005 − Rev. 5 Publication Order Number: MMUN2111LT1/D MMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Device* MMUN2111LT1, G MMUN2111LT3, G MMUN2112LT1, G MMUN2113LT1, G MMUN2113LT3, G MMUN2114LT1, G MMUN2115LT1, G (Note 3) MMUN2116LT1, G (Note 3) MMUN2130LT1, G (Note 3) MMUN2131LT1, G (Note 3) MMUN2132LT1, G (Note 3) MMUN2133LT1, G (Note 3) MMUN2134LT1, G (Note 3) Package SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 SOT−23 Marking A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel *The “G’’ suffix indicates Pb−Free package available. 3. New devices. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 2 MMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS (Note 5) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 − 60 100 140 140 250 250 5.0 15 27 140 130 − − − − − − − − − − − − 0.25 Vdc Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1 VCE(sat) VOL − − − − − − − − − − − VOH MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 MMUN2130LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 − 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 − 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 − 1.2 0.185 4.9 − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 − Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Vdc (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) Input Resistor kW Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 250 PD , POWER DISSIPATION (MILLIWATTS) 200 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 75°C 0.1 25°C 150 100 50 0 −50 RqJA = 625°C/W 0 50 100 150 0.01 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V 4 Figure 2. VCE(sat) versus IC TA = 75°C 100 25°C −25°C C ob , CAPACITANCE (pF) 3 f = 1 MHz lE = 0 V TA = 25°C 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain 100 Figure 4. Output Capacitance 75°C 25°C TA = −25°C 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 10 1 10 TA = −25°C 25°C 75°C 0.1 1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current http://onsemi.com 4 MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) IC/IB = 10 TA = −25°C 25°C 1 75°C h FE , DC CURRENT GAIN (NORMALIZED) 10 1000 VCE = 10 V TA = 75°C 100 25°C −25°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 75°C 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 −25°C 25°C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C Figure 13. DC Current Gain 100 10 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 TA = 75°C 25°C −25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 TA = −25°C 10 VO = 2 V 25°C 75°C Vin , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 6 MMUN2111LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = −25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25°C −25°C TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC 4.5 4 C ob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 Figure 18. DC Current Gain TA = 75°C IC, COLLECTOR CURRENT (mA) −25°C 25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) +12 V TA = −25°C 25°C 75°C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 7 MMUN2111LT1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−08 ISSUE AM D 3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE b e q A L A1 L1 VIEW C 0.25 DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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