MMUN2217LT1G

MMUN2217L, NSVMMUN2217L Digital Transistors (BRT) R1 = 4.7 kW, R2 = 10 kW NPN Transistors with Monolithic Bias Resistor Network www.onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. PIN CONNECTIONS PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating MARKING DIAGRAM AAM MG G SOT−23 CASE 318 STYLE 6 1 AAM M G Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc ORDERING INFORMATION Input Forward Voltage VIN(fwd) 20 Vdc See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Input Reverse Voltage VIN(rev) 7 Vdc Collector Current − Continuous *Date Code orientation may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 October, 2016 − Rev. 3 1 Publication Order Number: DTC143X/D MMUN2217L, NSVMMUN2217L Table 1. ORDERING INFORMATION Part Marking Package Shipping† MMUN2217LT1G AAM SC−23 (Pb−Free) 3000 / Tape & Reel NSVMMUN2217LT1G AAM SC−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PD, POWER DISSIPATION (mW) 300 250 (1) SOT−23; Minimum Pad 200 (1) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 246 400 2.0 3.2 mW THERMAL CHARACTERISTICS (SOT−23) (MMUN2217L) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. www.onsemi.com 2 MMUN2217L, NSVMMUN2217L Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.5 50 − − 50 − − 35 60 − − − 0.25 − 0.9 0.3 2.5 2.0 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) Collector *Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 1.0 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 20 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Vdc Vdc Vdc Vdc Vdc Input Resistor R1 3.3 4.7 6.1 Resistor Ratio R1/R2 0.38 0.47 0.56 kW Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%. www.onsemi.com 3 MMUN2217L, NSVMMUN2217L 1 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS MMUN2217L 25°C 0.1 150°C −55°C 0.01 0 10 20 30 40 100 −55°C 10 1 50 0 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC 100 3.2 2.8 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 2.4 2 1.6 1.2 0.8 0.4 0 10 20 30 40 50 −55°C 10 25°C 1 0.1 150°C VO = 5 V 0.01 VR, REVERSE VOLTAGE (V) 2 3 Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 0 1 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 100 Figure 3. DC Current Gain 3.6 0 150°C 25°C 10 25°C −55°C 1 150°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 4 50 4 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. 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