MMVL3102T1G

MMVL3102T1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Pb−Free Package is Available http://onsemi.com 22 pF (Nominal) 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 30 Vdc Peak Forward Current IF 200 mAdc 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature 2 Symbol Max Unit 200 1.57 mW mW/°C RqJA 635 °C/W TJ, Tstg 150 °C 1 PD PLASTIC SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad MARKING DIAGRAM 4C M G G 4C = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMVL3102T1 SOD−323 3000 / Tape & Reel MMVL3102T1G SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 Publication Order Number: MMVL3102T1/D MMVL3102T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − Vdc IR − − 0.1 mAdc TCC − 300 − ppm/°C Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMVL3102T1 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min Nom Max Min Min Typ 20 22 25 200 4.5 4.8 TYPICAL CHARACTERISTICS 20 40 Q, FIGURE OF MERIT (x 1000) CT , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 f = 1.0 MHz TA = 25°C 8.0 0.5 1.0 2.0 3.0 5.0 10 20 30 1.0 0 3.0 6.0 9.0 12 15 18 21 24 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance Figure 2. Figure of Merit C T, DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 3.0 2.0 0.3 0.2 100 10 VR = 20 Vdc 1.0 0.1 0.01 0.001 −60 5.0 0.5 4.0 0 0.3 TA = 25°C f = 50 MHz 10 −20 0 +20 +60 +100 1.03 VR = 3.0 Vdc f = 1.0 MHz 1.02 1.01 1.00 0.99 0.98 0.97 −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Leakage Current Figure 4. Diode Capacitance NOTES ON TESTING AND SPECIFICATIONS CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc. http://onsemi.com 2 30 1.04 0.96 −75 +140 27 +100 +125 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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