MMVL3700T1
High Voltage
Silicon Pin Diode
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general−purpose switching
circuits. They are supplied in a cost−effective plastic surface mount
package for economical, high−volume consumer and industrial
requirements.
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SILICON PIN SWITCHING DIODE
Features
• Long Reverse Recovery Time: trr = 300 ns (Typ)
• Rugged PIN Structure Coupled with Wirebond Construction
1
CATHODE
for Optimum Reliability
2
ANODE
• Low Series Resistance @ 100 MHz:
RS = 0.7 W (Typ) @ IF = 10 mAdc
2
• Reverse Breakdown Voltage = 200 V (Min)
• Pb−Free Package is Available
1
PLASTIC
SOD−323
CASE 477
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
200
Vdc
Peak Forward Current
IF
20
mAdc
Symbol
Max
Unit
200
1.57
mW
mW/°C
RqJA
635
°C/W
TJ, Tstg
150
°C
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
4R M G
G
4R = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Shipping †
Device
Package
MMVL3700T1
SOD−323
3000/Tape & Reel
MMVL3700T1G
SOD−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1
Publication Order Number:
MMVL3700T1/D
MMVL3700T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
200
−
−
Vdc
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
CT
−
−
1.0
pF
Series Resistance
(IF = 10 mAdc)
RS
−
0.7
1.0
W
Reverse Leakage Current
(VR = 150 Vdc)
IR
−
−
0.1
mAdc
Reverse Recovery Time
(IF = IR = 10 mAdc)
trr
−
300
−
ns
Reverse Breakdown Voltage
(IR = 10 mAdc)
TYPICAL CHARACTERISTICS
800
2.8
I F , FORWARD CURRENT (mA)
RS , SERIES RESISTANCE (OHMS)
3.2
TA = 25°C
2.4
2.0
1.6
1.2
0.8
0
2.0
4.0
6.0
8.0
10
12
14
500
400
TA = 25°C
300
200
0
16
0.7
0.8
0.9
1.0
IF, FORWARD CURRENT (mA)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Series Resistance
Figure 2. Forward Voltage
10
8.0
6.0
100
40
I R , REVERSE CURRENT (μ A)
C T , DIODE CAPACITANCE (pF)
600
100
0.4
0
700
4.0
TA = 25°C
2.0
1.0
0.8
0.6
0.4
0.2
10
4.0
VR = 15 Vdc
1.0
0.4
0.1
0.04
0.01
0.004
0.1
0
−10
−20
−30
−40
0.001
−60
−50
VR, REVERSE VOLTAGE (VOLTS)
−20
0
+20
+60
+100
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
Figure 4. Leakage Current
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2
+140
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
STYLE 1
SOD−323
CASE 477−02
ISSUE H
2
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
A3
A
C
NOTE 3
DATE 13 MAR 2007
1
STYLE 2
L
A1
NOTE 5
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
XX M
0.63
0.025
STYLE 1
0.83
0.033
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DESCRIPTION:
98ASB17533C
SOD−323
STYLE 2
XX = Specific Device Code
M = Date Code
1.60
0.063
DOCUMENT NUMBER:
XX M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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