MMVL409T1
Preferred Device
Silicon Tuning Diode
These devices are designed for general frequency control and tuning
applications. They provide solid−state reliability in replacement of
mechanical tuning methods.
Features
•
•
•
•
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Surface Mount Package
Pb−Free Package is Available
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VOLTAGE VARIABLE
CAPACITANCE DIODE
1
CATHODE
MAXIMUM RATINGS
Rating
Symbol
Value
2
ANODE
Unit
Continuous Reverse Voltage
VR
20
Vdc
Peak Forward Current
IF
200
mAdc
Symbol
Max
Unit
200
1.57
mW
mW/°C
RqJA
635
°C/W
TJ, Tstg
150
°C
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
TA = 25°C (Note 1)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1
PD
PLASTIC
SOD−323
CASE 477
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
MARKING DIAGRAM
X5 M G
G
X5 = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMVL409T1
SOD−323 3000 / Tape & Reel
MMVL409T1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MMVL409T1/D
MMVL409T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
Unit
V(BR)R
20
−
−
Vdc
IR
−
−
0.1
mAdc
TCC
−
300
−
ppm/°C
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
MMVL409T1
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C8 (Note 2)
f = 1.0 MHz
Min
Nom
Max
Min
Min
Max
26
29
32
200
1.5
1.9
2. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
TYPICAL CHARACTERISTICS
Q, FIGURE OF MERIT
32
f = 1.0 MHz
TA = 25°C
24
16
VR = 3 Vdc
TA = 25°C
100
8
0
I R , REVERSE CURRENT (nA)
1000
1
2
3
10
20
30
10
100
1000
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
VR = 15 Vdc
2.0
1.0
0.6
0.2
0.1
0.06
−40
100
f, FREQUENCY (MHz)
100
60
20
10
6.0
0.02
0.01
0.006
0.002
0.001
−60
10
VR, REVERSE VOLTAGE (VOLTS)
C t , DIODE CAPACITANCE (NORMALIZED)
C T, DIODE CAPACITANCE (pF)
40
−20
0
+20
+40
+60
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
+80 +100 +120 +140
VR = 3.0 Vdc
f = 1.0 MHz
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
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2
+100
+125
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
STYLE 1
SOD−323
CASE 477−02
ISSUE H
2
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
A3
A
C
NOTE 3
DATE 13 MAR 2007
1
STYLE 2
L
A1
NOTE 5
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
XX M
0.63
0.025
STYLE 1
0.83
0.033
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DESCRIPTION:
98ASB17533C
SOD−323
STYLE 2
XX = Specific Device Code
M = Date Code
1.60
0.063
DOCUMENT NUMBER:
XX M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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