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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
MOC205M, MOC206M, MOC207M,
MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
8-pin SOIC Single-Channel Phototransistor Output
Optocoupler
Features
Description
• Closely Matched Current Transfer Ratios
• Minimum BVCEO of 70 V Guaranteed
– MOC205M, MOC206M, MOC207M
• Minimum BVCEO of 30 V Guaranteed
– MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
• Low LED Input Current Required for Easier Logic
Interfacing
– MOC216M, MOC217M
• Convenient Plastic SOIC-8 Surface Mountable
Package Style, with 0.050" Lead Spacing
• Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for
high-density applications, and eliminate the need for
through-the-board mounting.
Applications
• Feedback Control Circuits
• Interfacing and Coupling Systems of Different
Potentials and Impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits
Schematic
Package Outline
ANODE 1
8 N/C
CATHODE 2
7 BASE
Figure 2. Package Outline
N/C 3
6 COLLECTOR
N/C 4
5 EMITTER
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
August 2015
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
I–IV
< 150 VRMS
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
I–III
< 300 VRMS
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
DTI
TS
IS,INPUT
Parameter
4000
Vpeak
External Creepage
≥4
mm
External Clearance
≥4
mm
≥ 0.4
mm
Distance Through Insulation (Insulation Thickness)
Case
Temperature(1)
Input Current(1)
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO = 500
V(1)
150
°C
200
mA
300
mW
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
2
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Rating
Value
Unit
Storage Temperature
-40 to +125
°C
TA
Ambient Operating Temperature
-40 to +100
°C
TJ
Junction Temperature
TOTAL DEVICE
TSTG
TSOL
PD
-40 to +125
°C
260 for 10 seconds
°C
Total Device Power Dissipation @ TA = 25°C
240
mW
Derate above 25°C
2.94
mW/°C
Continuous Forward Current
60
mA
Forward Current – Peak (PW = 100 µs, 120 pps)
1.0
A
Reverse Voltage
6.0
V
Lead Solder Temperature
EMITTER
IF
IF (pk)
VR
LED Power Dissipation @ TA = 25°C
90
mW
Derate above 25°C
0.8
mW/°C
Continuous Collector Current
150
mA
VCEO
Collector-Emitter Voltage
30
V
VECO
Emitter-Collector Voltage
7
V
Detector Power Dissipation @ TA = 25°C
150
mW
Derate above 25°C
1.76
mW/°C
PD
DETECTOR
IC
PD
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
3
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
Input Forward Voltage
VF
IR
CIN
MOC216M, MOC217M
IF = 1 mA
1.07
1.3
V
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M
IF = 10 mA
1.15
1.5
V
VR = 6 V
0.001
100
µA
Reverse Leakage Current
Input Capacitance
18
pF
DETECTOR
ICEO1
ICEO2
Collector-Emitter Dark Current
VCE = 10 V, TA = 25°C
1.0
50
nA
VCE = 10 V, TA = 100°C
1.0
µA
Collector-Emitter Breakdown Voltage
BVCEO
MOC205M, MOC206M, MOC207M
IC = 100 µA
70
100
V
MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M
IC = 100 µA
30
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 10 µA
70
120
V
BVECO
Emitter-Collector Breakdown Voltage
IE = 100 µA
7
10
V
Collector-Emitter Capacitance
f = 1.0 MHz, VCE = 0
7
pF
CCE
COUPLED
Collector-Output Current
CTR
MOC205M
IF = 10 mA, VCE = 10 V
40
80
%
MOC206M
IF = 10 mA, VCE = 10 V
63
125
%
MOC207M
IF = 10 mA, VCE = 10 V
100
200
%
MOC211M
IF = 10 mA, VCE = 10 V
20
%
MOC212M
IF = 10 mA, VCE = 10 V
50
%
MOC213M
IF = 10 mA, VCE = 10 V
100
%
MOC216M
IF = 1 mA, VCE = 5 V
50
%
MOC217M
IF = 1 mA, VCE = 5 V
100
%
Collector-Emitter Saturation Voltage
VCE(SAT)
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M
IC = 2 mA, IF = 10 mA
0.4
V
MOC216M, MOC217M
IC = 100 µA, IF = 1 mA
0.4
V
ton
Turn-On Time
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
7.5
µs
toff
Turn-Off Time
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
5.7
µs
tr
Rise Time
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
3.2
µs
tf
Fall Time
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
4.7
µs
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
4
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Electrical Characteristics
Symbol
Characteristic
Test Conditions
VISO
Input-Output Isolation Voltage t = 1 Minute
CISO
Isolation Capacitance
VI-O = 0 V, f = 1 MHz
RISO
Isolation Resistance
VI-O = ±500 VDC, TA = 25°C
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
Min.
Typ.
2500
Unit
VACRMS
0.2
1011
Max.
pF
Ω
www.fairchildsemi.com
5
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Isolation Characteristics
1.8
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1.7
VF – FORWARD VOLTAGE (V)
1.6
1.5
1.4
TA = –55°C
1.3
1.2
TA = 25°C
1.1
TA = 100°C
1.0
1
10
100
VCE = 5 V
NORMALIZED TO IF = 10 mA
1
0.1
IF – LED FORWARD CURRENT (mA)
0.01
Figure 3. LED Forward Voltage vs. Forward Current
0.1
1
10
100
IF – LED INPUT CURRENT (mA)
Figure 4. Output Curent vs. Input Current
1.6
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1
NORMALIZED TO TA = 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I F = 10 mA
NORMALIZED TO VCE = 5 V
0.0
0
120
1
2
3
4
5
6
7
8
9
10
VCE – COLLECTOR-EMITTER VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
Figure 5. Output Current vs. Ambient Temperature
Figure 6. Output Current vs. Collector-Emitter Voltage
10000
0.9
VCE = 10 V
1000
IF = 20 mA
0.8
0.7
100
NORMALIZED CTR
I CEO – COLLECTOR -EMITTER DARK CURRENT (nA)
1.0
10
IF = 10 m A
0.6
0.5
IF = 5 mA
0.4
0.3
0.2
1
VCE = 5 V, TA = 25°C
Normalized to:
CTR at RBE = Open
0.1
0.0
0.1
10
0
20
40
60
80
1000
RBE – BASE RESISTANCE (kΩ)
TA – AMBIENT TEMPERATURE (°C)
Figure 8. CTR vs. RBE (Unsaturated)
Figure 7. Dark Current vs. Ambient Temperature
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
100
100
www.fairchildsemi.com
6
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Typical Performance Curves
1.0
4.0
0.9
3.5
0.8
3.0
0.7
NORMALIZED ton
NORMALIZED CTR
IF = 20 mA
IF = 10 m A
0.6
0.5
IF = 5 mA
0.4
0.3
VCC = 10 V
IC = 2 mA
RL = 100Ω
NORMALIZED TO :
ton AT RBE = OPEN
2.5
2.0
1.5
1.0
0.2
VCE = 0.3 V, TA = 25°C
Normalized to:
CTR at RBE = Open
0.1
0.0
10
0.5
100
0.0
0.01
1000
0.1
RBE – BASE RESISTANCE (kΩ)
1
10
100
RBE – BASE RESISTANCE (MΩ)
Figure 9. CTR vs. RBE (Saturated)
Figure 10. Normalized ton vs. RBE
1.6
VCC = 10 V
IC = 2 mA
1.4
RL = 100 Ω
NORMALIZED TO :
tofff AT RBE = OPEN
NORMALIZED tofff
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
10
100
RBE – BASE RESISTANCE (MΩ)
Figure 11. Normalized toff vs. RBE
TEST CIRCUIT
WAVEFORMS
VCC = 10 V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 12. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
7
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Typical Performance Curves (Continued)
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Reflow Profile
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
tP
Tsmax
tL
Preheat Area
Tsmin
ts
240
120
360
Time 25°C to Peak
Time (seconds)
Figure 13. Reflow Profile
Profile Freature
Pb-Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second maximum
Time 25°C to Peak Temperature
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
8 minutes maximum
www.fairchildsemi.com
8
Part Number
Package
Packing Method
MOC205M
Small Outline 8-Pin
Tube (100 Units)
MOC205R2M
Small Outline 8-Pin
Tape and Reel (2500 Units)
MOC205VM
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tube (100 Units)
MOC205R2VM
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tape and Reel (2500 Units)
Note:
2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products.
Marking Information
1
205
V
X YY S
3
4
2
6
5
Figure 14. Top Mark
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “4”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
9
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Ordering Information(2)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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