MOC3010M, MOC3011M,
MOC3012M, MOC3020M,
MOC3021M, MOC3022M,
MOC3023M
6-Pin DIP Random-Phase
Triac Driver Output
Optocoupler
(250/400 V Peak)
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Description
The MOC301XM and MOC302XM series are optically isolated
triac driver devices. These devices contain a GaAs infrared emitting
diode and a light activated silicon bilateral switch, which functions
like a triac. They are designed for interfacing between electronic
controls and power triacs to control resistive and inductive loads for
115 VAC operations.
PDIP6 8.51x6.35, 2.54P
CASE 646BY
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
Features
• Excellent IFT Stability − IR Emitting Diode Has Low Degradation
• Peak Blocking Voltage
250 V, MOC301XM
♦ 400 V, MOC302XM
Safety and Regulatory Approvals
♦ UL1577, 4,170 VACRMS for 1 Minute
♦ DIN EN/IEC60747−5−5
These are Pb−Free Devices
PDIP6 8.51x6.35, 2.54P
CASE 646BX
♦
•
•
ANODE 1
6 MAIN TERM.
Applications
•
•
•
•
•
•
•
•
•
Industrial Controls
Solenoid/Valve Controls
Traffic Lights
Static AC Power Switch
Vending Machines
Incandescent Lamp Dimmers
Solid State Relay
Motor Control
Lamp Ballasts
5 NC*
CATHODE 2
N/C 3
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
May, 2018 − Rev. 1
1
Publication Order Number:
MOC3023M/D
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Characteristics
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1, For
Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
40/85/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC
1275
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4” Lead Spacing)
≥ 10
mm
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
VPR
DTI
RIO
Parameter
>
Insulation Resistance at TS, VIO = 500 V
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2
109
W
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Parameters
Device
Value
Unit
Total Device
TSTG
Storage Temperature
All
−40 to 150
°C
TOPR
Operating Temperature
All
−40 to 85
°C
Junction Temperature Range
All
−40 to 100
°C
Lead Solder Temperature
All
260 for 10 seconds
°C
330
mW
4.4
mW/°C
TJ
TSOL
PD
Total Device Power Dissipation at 25°C Ambient
All
Derate Above 25°C
Emitter
IF
Continuous Forward Current
All
60
mA
VR
Reverse Voltage
All
3
V
PD
Total Power Dissipation at 25°C Ambient
100
mW
1.33
mW/°C
MOC3010M, MOC3011M,
MOC3012M
250
V
MOC3020M, MOC3021M,
MOC3022M, MOC3023M
400
All
1
A
300
mW
4
mW/°C
All
Derate Above 25°C
Detector
VDRM
ITSM
PD
Off−State Output Terminal Voltage
Peak Repetitive Surge Current (PW = 100 ms, 120 pps)
Total Power Dissipation at 25°C Ambient
All
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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3
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameters
Test Conditions
Device
Min.
Typ.
Max.
Unit
Emitter
VF
Input Forward Voltage
IF = 10 mA
All
1.15
1.50
V
IR
Reverse Leakage Current
VR = 3 V, TA = 25°C
All
0.01
100
mA
IDRM
Peak Blocking Current, Either Direction
Rated VDRM, IF = 0(1)
All
10
100
nA
VTM
Peak On−State Voltage, Either Direction
ITM = 100 mA peak, IF = 0
All
1.8
3.0
V
Typ.
Max.
Unit
30
mA
Detector
1. Test voltage must be applied within dv/dt rating.
TRANSFER CHARACTERISTICS
Symbol
IFT
DC Characteristics
LED Trigger Current
Test Conditions
Voltage = 3 V(2)
Device
Min.
MOC3020M
MOC3010M
15
MOC3021M
MOC3011M
10
MOC3022M
MOC3012M
5
MOC3023M
IH
Holding Current, Either Direction
All
mA
100
2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max
IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and MOC3022M, 5 mA for MOC3012M and
MOC3023M) and absolute maximum IF (60 mA).
ISOLATION CHARACTERISTICS
Symbol
VISO
Parameters
Isolation Voltage
(3)
Test Conditions
t = 1 Minute
Device
Min.
All
4170
Typ.
Max.
Unit
VACRMS
3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
TYPICAL PERFORMANCE CURVES
1.8
800
1.7
ITM − ON−STATE CURRENT (mA)
600
V F − FORWARD VOLTAGE (V)
1.6
1.5
1.4
o
TA = −55 C
1.3
o
TA = 25 C
1.2
o
TA = 100 C
400
200
0
−200
−400
−600
1.1
−800
1.0
1
10
−3
100
−2
−1
Figure 2. LED Forward Voltage vs. Forward
Current
2
3
25
IFT − TRIGGER CURRENT (NORMALIZED)
ITM − TRIGGER CURRENT (NORMALIZED)
1
Figure 3. On−State Characteristics
1.4
1.3
1.2
1.1
1.0
0.9
0.8
NORMALIZED TO:
PWin ≥ 100 ms
20
15
10
5
0
0.7
1
2
NORMALIZED TO TA = 25_C
−40
−20
0
5
10
20
50
100
PWin − LED TRIGGER WIDTH 〈(ms)
0.6
20
40
60
80
Figure 5. LED Current Required to Trigger vs.
LED Pulse Width
100
AMBIENT TEMPERATURE − TA (oC)
Figure 4. Trigger Current vs. Ambient
Temperature
IDRM − LEAKAGE CURRENT (nA)
10000
12
STATIC dv/dt
CIRCUIT IN FIGURE 8
10
STATIC dv/dt (V/ms)
0
VTM − ON−STATE VOLTAGE (V)
IF − LED FORWARD CURRENT (mA)
8
6
4
1000
100
10
1
2
0
25
30
40
50
60
70
80
90
0.1
100
−40
o
−20
0
20
40
60
80
TA − AMBIENT TEMPERATURE ( C)
TA − AMBIENT TEMPERATURE ( C)
Figure 6. dv/dt vs. Temperature
Figure 7. Leakage Current, IDRM vs.
Temperature
o
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5
100
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
400 V (MOC302X)
250 V (MOC301X)
Vdc
1. The mercury wetted relay provides a high speed
repeated pulse to the D.U.T.
RTEST
2. 100x scope probes are used, to allow high speeds and
voltages.
R = 10 kW
CTEST
PULSE
INPUT
MERCURY
WETTED
RELAY
APPLIED VOLTAGE
WAVEFORM
3. The worst−case condition for static dv/dt is established
by triggering the DUT with a normal LED input current,
then removing the current. The variable R TEST allows
the dv/dt to be gradually increased until the DUT
continues to trigger in response to the applied voltage
pulse, even after the LED current has been removed.
The dv/dt is then decreased until the DUT stops
triggering. t RC is measured at this point and recorded.
X100
SCOPE
PROBE
DUT
Vmax = 400 V (MOC302X)
= 250 V (MOC301X)
252 V (MOC302X)
158 V (MOC301X)
dv/dt =
0 VOLTS
0.63 Vmax
RC
RC
252
=
RC
158
=
RC
(MOC302X)
(MOC301X)
Note:
This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only.
Figure 8. Static dv/dt Test Circuit
RL
Rin
VCC
1
2
180 W
6
MOC3010M
MOC3011M
MOC3012M
120 V
60 Hz
5
3
4
Figure 9. Resistive Load
ZL
VCC
Rin
1
2
3
180 W
6
MOC3010M
MOC3011M
MOC3012M
5
0.1 mF
2.4 kW
C1
4
Figure 10. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
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6
120 V
60 Hz
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
ZL
Rin
VCC
1
2
180 W
6
MOC3010M
MOC3011M
MOC3012M
3
5
1.2 kW
0.2 mF
120 V
60 Hz
C1
4
Figure 11. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
Rin
VCC
1
2
3
6
MOC3020M
MOC3021M
MOC3022M
MOC3023M
360 W
5
470 W
HOT
39
0.05 mF
240 VAC
4
0.01 mF
LOAD
In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side.
The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac, and the 470 W resistor and 0.05 mF
capacitor are for snubbing the coupler. These components may or may not be necessary depending upon
the particular and load used.
Figure 12. Typical Application Circuit
Reflow Profile
300
260_C
280
260
>245_C = 42 s
240
220
200
180
_C
160
_C = 90 s
140
120
1.822_C/s Ramp−up Rate
100
80
60
40
33 s
20
0
0
60
120
180
Time (s)
Figure 13. Reflow Profile
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7
270
360
GROUND
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
ORDERING INFORMATION
Part Number
Package
Shipping
MOC3010M
DIP 6−Pin
50 Units / Tube
MOC3010SM
SMT 6−Pin (Lead Bend)
50 Units / Tube
MOC3010SR2M
SMT 6−Pin (Lead Bend)
1000 Units / Tape & Reel
MOC3010VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
50 Units / Tube
MOC3010SVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
50 Units / Tube
MOC3010SR2VM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
1000 Units / Tape & Reel
MOC3010TVM
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
50 Units / Tube
NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,
MOC3021M, MOC3022M, and MOC3023M product families.
MARKING INFORMATION
ON
MOC3010
2
X YY Q
6
V
3
1
5
4
Figure 14. Top Marking
Top Mark Definitions
1
ON Semiconductor Logo
2
Device Number
3
DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option)
4
One−Digit Year Code, e.g., ‘5’
5
Two−Digit Work Week, Ranging from ‘01’ to ‘53’
6
Assembly Package Code
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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