DATA SHEET
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6-Pin DIP Random-Phase
Triac Driver Optocoupler
(600 Volt Peak)
MOC3051M, MOC3052M,
MOC3053M
PDIP6
CASE 646BY
The MOC3051M, MOC3052M and MOC3053M consist of a GaAs
infrared emitting diode optically coupled to a non−zero− crossing
silicon bilateral AC switch (triac). These devices isolate low voltage
logic from 115 VAC and 240 VAC lines to provide random phase
control of high current triacs or thyristors. These devices feature
greatly enhanced static dv/dt capability to ensure stable switching
performance of inductive loads.
PDIP6
CASE 646BZ
Features
MARKING DIAGRAM
• Excellent IFT Stability—IR Emitting Diode Has Low Degradation
• 600 V Peak Blocking Voltage
• Safety and Regulatory Approvals
♦
♦
PDIP6
CASE 646BX
MOC3051
V X YY Q
UL1577, 4,170 VACRMS for 1 Minute
DIN EN/IEC60747−5−5
Typical Applications
•
•
•
•
•
•
•
•
Solenoid/Valve Controls
Lamp Ballasts
Static AC Power Switch
Interfacing Microprocessors to 115 VAC and 240 VAC Peripherals
Solid State Relay
Incandescent Lamp Dimmers
Temperature Controls
Motor Controls
ON
MOC3051
V
X
YY
Q
= ON Semiconductor Logo
= Device Code
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Two−Digit Work Week,
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September, 2022 − Rev. 4
1
Publication Order Number:
MOC3052M/D
MOC3051M, MOC3052M, MOC3053M
SAFETY AND INSULATIONS RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–IV
Climatic Classification
40/85/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and
Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over−Voltage
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4” Lead Spacing)
≥ 10
mm
VPR
Parameter
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
RIO
Insulation Resistance at TS, VIO = 500 V
> 109
W
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2
MOC3051M, MOC3052M, MOC3053M
MAXIMUM RATINGS TA = 25°C unless otherwise specified.
Parameter
Symbol
Value
Unit
TOTAL DEVICE
TSTG
Storage Temperature
−40 to +125
°C
TOPR
Operating Temperature
−40 to +85
°C
TJ
−40 to +100
°C
260 for 10 seconds
°C
Total Device Power Dissipation at 25°C Ambient
330
mW
Derate Above 25°C
4.4
mW/°C
IF
Continuous Forward Current
60
mA
VR
Reverse Voltage
3
V
PD
Total Power Dissipation at 25°C Ambient
100
mW
Derate Above 25°C
1.33
mW/°C
600
V
1
A
TSOL
PD
Junction Temperature Range
Lead Solder Temperature
EMITTER
DETECTOR
VDRM
Off−State Output Terminal Voltage
ITSM
Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave)
PD
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
300
mW
4
mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameters
Characteristic
Min
Typ
Max
Unit
EMITTER
VF
Input Forward Voltage
IF = 10 mA
1.18
1.50
V
IR
Reverse Leakage Current
VR = 3 V
0.05
100
mA
IDRM
Peak Blocking Current, Either Direction
VDRM = 600 V, IF = 0
(Note 1)
10
100
nA
VTM
Peak On−State Voltage, Either Direction
ITM = 100 mA peak,
IF = 0
2.2
2.5
V
dv/dt
Critical Rate of Rise of Off−State Voltage
IF = 0, VDRM = 600 V
1000
Device
Min
DETECTOR
V/ms
TRANSFER CHARACTERISTICS
Symbol
DC Characteristic
Test Conditions
IFT
LED Trigger Current,
Either Direction
Main Terminal
Voltage = 3 V (Note 2)
IH
Holding Current,
Either Direction
Max
Unit
MOC3051M
15
mA
MOC3052M
10
MOC3053M
6
All
Typ
540
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3
mA
MOC3051M, MOC3052M, MOC3053M
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (continued)
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Min
4170
Typ
Max
Unit
ISOLATION CHARACTERISTICS
VISO
Input−Output Isolation Voltage (Note 3)
f = 60 Hz, t = 1 Minute
RISO
Isolation Resistance
VI−O = 500 VDC
1011
VACRMS
W
CISO
Isolation Capacitance
V = 0 V, f = 1 MHz
0.2
pF
1. Test voltage must be applied within dv/dt rating.
2. All devices will trigger at an IF value greater than or equal to the maximum IFT specification. For optimum operation over temperature and
lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IF should not
exceed the absolute maximum rating of 60 mA.
Example: For MOC3052M, the minimum IF bias should be 10 mA x 150% = 15 mA.
3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
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4
MOC3051M, MOC3052M, MOC3053M
TYPICAL CHARACTERISTICS
400
ITM − ON−STATE CURRENT (mA)
VF − FORWARD VOLTAGE (V)
1.7
1.6
1.5
1.4
1.3
TA = −40°C
1.2
TA = 25°C
1.1
TA = 85°C
1.0
0.9
300
200
100
0
−100
−200
−300
−400
1
10
100
−3
−2
IF − LED FORWARD CURRENT (mA)
NORMALIZED TO TA = 25°C
1.2
1.0
0.8
0.6
0
20
40
60
80
100
TA − AMBIENT TEMPERATURE (°C)
2
3
15
NORMALIZED TO PW = 100 μs
10
5
0
1
10
100
PW − LED TRIGGER PULSE WIDTH (ms)
Figure 4. LED Trigger Current vs. LED Pulse Width
4
10000
IDRM − LEAKAGE CURRENT (nA)
IH (NORMALIZED) = IH (TA) / IH (TA = 25°C)
Figure 3. LED Trigger Current vs. Ambient
Temperature
NORMALIZED TO TA = 25°C
3
2
1
0
−40
1
Figure 2. On−State Characteristics
IFT (NORMALIZED) = IFT (PW) / IFT (PW = 100 ms)
IFT (NORMALIZED) = IFT (TA) / IFT (TA = 25°C)
1.4
−20
0
VTM − ON−STATE VOLTAGE (V)
Figure 1. LED Forward Voltage vs. Forward Current
−40
−1
VDRM = 600 V
1000
100
10
1
0.1
−20
0
20
40
60
80
100
−40
TA, AMBIENT TEMPERATURE (°C)
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Holding Current vs. Ambient
Temperature
Figure 6. Leakage Current vs. Ambient
Temperature
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5
100
MOC3051M, MOC3052M, MOC3053M
APPLICATIONS INFORMATION
Basic Triac Driver Circuit
LED Trigger Current vs. Pulse Width
The random phase triac drivers MOC3051M,
MOC3052M and MOC3053M can allow snubberless
operations in applications where load is resistive and the
external generated noise in the AC line is below its
guaranteed dv/dt withstand capability. For these
applications, a snubber circuit is not necessary when a noise
insensitive power triac is used. Figure 7 shows the circuit
diagram. The triac driver is directly connected to the triac
main terminal 2 and a series resistor R which limits the
current to the triac driver. Current limiting resistor R must
have a minimum value which restricts the current into the
driver to maximum 1 A.
The power dissipation of this current limiting resistor and
the triac driver is very small because the power triac carries
the load current as soon as the current through driver and
current limiting resistor reaches the trigger current of the
power triac. The switching transition times for the driver is
only one micro second and for power triacs typical four
micro seconds.
Random phase triac drivers are designed to be phase
controllable. They may be triggered at any phase angle
within the AC sine wave. Phase control may be
accomplished by an AC line zero cross detector and a
variable pulse delay generator which is synchronized to the
zero cross detector. The same task can be accomplished by
a microprocessor which is synchronized to the AC zero
crossing. The phase controlled trigger current may be a very
short pulse which saves energy delivered to the input LED.
LED trigger pulse currents shorter than 100 ms must have
increased amplitude as shown on Figure 4. This graph shows
the dependency of the trigger current IFT versus the pulse
width. IFT in this graph is normalized in respect to the
minimum specified IFT for static condition, which is
specified in the device characteristic. The normalized IFT
has to be multiplied with the devices guaranteed static
trigger current.
Example:
IFT = 10 mA, Trigger PW = 4 ms
IF (pulsed) = 10 mA × 3 = 30 mA
Triac Driver Circuit for Noisy Environments
When the transient rate of rise and amplitude are expected
to exceed the power triacs and triac drivers maximum
ratings a snubber circuit as shown in Figure 8 is
recommended. Fast transients are slowed by the R−C
snubber and excessive amplitudes are clipped by the Metal
Oxide Varistor MOV.
Minimum LED Off Time in Phase Control Applications
In phase control applications, one intends to be able to
control each AC sine half wave from 0° to 180°. Turn on at
0° means full power and turn on at 180° means zero power.
This is not quite possible in reality because triac driver and
triac have a fixed turn on time when activated at zero
degrees. At a phase control angle close to 180° the driver’s
turn on pulse at the trailing edge of the AC sine wave must
be limited to end 200 ms before AC zero cross as shown in
Figure 10. This assures that the triac driver has time to switch
off. Shorter times may cause loss of control at the following
half cycle.
Triac Driver Circuit for Extremely Noisy Environments
As specified in the noise standards IEEE472 and
IEC255−4.
Industrial control applications do specify a maximum
transient noise dv/dt and peak voltage which is
super−imposed onto the AC line voltage. In order to pass this
environment noise test a modified snubber network as
shown in Figure 9 is recommended.
Static dv/dt
Critical rate of rise of off−state voltage or static dv/dt is a
triac characteristic that rates its ability to prevent false
triggering in the event of fast rising line voltage transients
when it is in the off−state. When driving a discrete power
triac, the triac driver optocoupler switches back to off−state
once the power triac is triggered. However, during the
commutation of the power triac in application where the
load is inductive, both triacs are subjected to fast rising
voltages. The static dv/dt rating of the triac driver
optocoupler and the commutating dv/dt rating of the power
triac must be taken into consideration in snubber circuit
design to prevent false triggering and commutation failure.
LED Trigger Current versus Temperature
Recommended operating LED control current IF lies
between the guaranteed IFT and absolute maximum IF.
Figure 3 shows the increase of the trigger current when the
device is expected to operate at an ambient temperature
below 25°C. Multiply the datasheet guaranteed IFT with the
normalized IFT shown on this graph and an allowance for
LED degradation over time.
Example:
IFT = 10 mA, LED degradation factor = 20%
IF at −40°C = 10 mA × 1.25 × 120% = 15 mA
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6
MOC3051M, MOC3052M, MOC3053M
VCC
TRIAC DRIVER
RLED
R
POWER TRIAC
AC LINE
CONTROL
RET.
Q
LOAD
RLED = (VCC − VFLED − VSATQ) / IFT
R = VPAC / ITSM
Figure 7. Basic Driver Circuit
VCC
RLED
TRIAC DRIVER
R
POWER TRIAC
RS
CS
AC LINE
MOV
CONTROL
LOAD
RET.
Typical Snubber values RS = 33 W, CS = 0.01 mF
MOV (Metal Oxide Varistor) protects power triac and
driver from transient overvoltages > VDRM max
Figure 8. Triac Driver Circuit for Noisy Environments
POWER TRIAC
VCC RLED
TRIAC DRIVER
R
RS MOV
AC LINE
CS
CONTROL
LOAD
RET.
Recommended snubber to pass IEEE472 and IEC255−4 noise tests
RS = 47 W, CS = 0.01 mF
Figure 9. Triac Driver Circuit for Extremely Noisy Environments
0°
180°
AC Line
LED PW
LED Current
LED turn off min. 200 ms
Figure 10. Minimum Time for LED Turn Off to Zero Crossing
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7
MOC3051M, MOC3052M, MOC3053M
REFLOW PROFILE
Figure 11. Reflow Profile
Profile Feature
Pb−Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60 seconds to 120 seconds
Ramp−up Rate (TL to TP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 seconds to 150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp−down Rate (TP to TL)
6°C/second maximum
Time 25°C to Peak Temperature
8 minutes maximum
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8
MOC3051M, MOC3052M, MOC3053M
ORDERING INFORMATION (Note 4)
Package
Device
Shipping
MOC3051M
DIP 6−Pin
Tube (50 Units)
MOC3051SM
SMT 6−Pin (Lead Bend)
Tube (50 Units)
MOC3051SR2M
SMT 6−Pin (Lead Bend)
Tape and Reel (1000 Units)
MOC3051VM
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
MOC3051SVM
SMT 6−Pin (Lead Bend),
DIN EN/IEC60747−5−5 Option
Tube (50 Units)
MOC3051SR2VM
SMT 6−Pin (Lead Bend),
DIN EN/IEC60747−5−5 Option
Tape and Reel (1000 Units)
MOC3051TVM
DIP 6−Pin, 0.4” Lead Spacing,
DIN EN/IEC60747−5−5 Option
Tube (50 Units)
4. The product orderable part number system listed in this table also applies to the MOC3052M and MOC3053M product families.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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