MOC3073SR2M

DATA SHEET www.onsemi.com 6-Pin DIP Random-Phase Triac Driver Optocoupler (800 V Peak) MOC3071M, MOC3072M, MOC3073M PDIP6 8.51x6.35, 2.54P CASE 646BY PDIP6 8.51x6.35, 2.54P CASE 646BZ Description The MOC3071M, MOC3072M and MOC3073M devices consist of a GaAs infrared emitting diode optically coupled to a non−zero− crossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 240 VAC lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads. PDIP6 8.51x6.35, 2.54P CASE 646BX Features • Excellent IFT Stability − IR Emitting Diode Has Low Degradation • 800 V Peak Blocking Voltage • Safety and Regulatory Approvals UL1577, 4,170 VACRMS for 1 Minute DIN EN/IEC60747−5−5 These are Pb−Free Devices ♦ • ♦ Applications • • • • • • • • Solenoid/Valve Controls Lamp Ballasts Static AC Power Switches Interfacing Microprocessors to 240 VAC Peripherals Solid State Relays Incandescent Lamp Dimmers Temperature Controls Motor Controls © Semiconductor Components Industries, LLC, 2016 September, 2022 − Rev. 3 Schematic ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. 1 Publication Order Number: MOC3072M/D MOC3071M, MOC3072M, MOC3073M SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm VPR DTI RIO Parameter > Insulation Resistance at TS, VIO = 500 V www.onsemi.com 2 109 W MOC3071M, MOC3072M, MOC3073M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameters Value Unit Total Device TSTG Storage Temperature −40 to 125 °C TOPR Operating Temperature −40 to 85 °C TJ −40 to 100 °C 260 for 10 seconds °C Total Device Power Dissipation at 25°C Ambient 330 mW Derate Above 25°C 4.4 mW/°C IF Continuous Forward Current 60 mA VR Reverse Voltage 3 V TSOL PD Junction Temperature Range Lead Solder Temperature Emitter Total Power Dissipation at 25°C Ambient 100 mW Derate Above 25°C 1.33 mW/°C VDRM Off−State Output Terminal Voltage 800 V ITSM Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A PD Detector PD Total Power Dissipation at 25°C Ambient Derate Above 25°C 300 mW 4 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 MOC3071M, MOC3072M, MOC3073M ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Test Conditions Min. Typ. Max. Unit Emitter VF Input Forward Voltage IF = 10 mA 1.18 1.5 V IR Reverse Leakage Current VR = 3 V 0.05 100 mA IDRM Peak Blocking Current, Either Direction VDRM = 800 V, IF = 0(1) 10 200 nA VTM Peak On−State Voltage, Either Direction ITM = 100 mA peak, IF = 0 2.2 2.5 V dv/dt Critical Rate of Rise of Off−State Voltage IF = 0, VDRM = 800 V Detector 1000 V/ms 1. Test voltage must be applied within dv/dt rating. TRANSFER CHARACTERISTICS Symbol IFT IH DC Characteristics Test Conditions LED Trigger Current, Either Direction Main Terminal Voltage = 3 V(2) Device Max. Unit MOC3071M 15 mA MOC3072M 10 MOC3073M 6 Holding Current, Either Direction Min. All Typ. mA 540 2. All devices will trigger at an IF value greater than or equal to the maximum IFT specification. For optimum operation over temperature and lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IF should not exceed the absolute maximum rating of 60 mA. Example: For MOC3072M, the minimum IF bias should be 10 mA x 150% = 15 mA ISOLATION CHARACTERISTICS Symbol VISO Parameters Input−Output Isolation Voltage (3) Test Conditions f = 60 Hz, t = 1 Minute Min. Typ. 4170 Max. Unit VACRMS RISO Isolation Resistance VI−O = 500 VDC 1011 CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 W pF 3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 MOC3071M, MOC3072M, MOC3073M TYPICAL PERFORMANCE CURVES 1.6 1.5 1.4 1.3 TA = −40 °C 1.2 TA = 25 °C 1.1 TA = 85 °C 1.0 0.9 400 ITM − ON−STATE CURRENT (mA) VF − FORWARD VOLTAGE (V) 1.7 1 10 300 200 100 0 −100 −200 −300 −400 100 −3 −2 IF − LED FORWARD CURRENT (mA) IFT (NORMALIZED) =FTI(PW) / IFT(PW=100μs) IFT (NORMALIZED) =FTI(TA) / IFT(TA=25°C) 1.4 NORMALIZED TO AT= 25°C 1.2 1.0 0.8 −20 0 20 40 60 80 100 TA − AMBIENT TEMPERATURE (°C) 1 2 3 15 NORMALIZED TO PW = 100μs 10 5 0 1 10 100 PW − LED TRIGGER PULSE WIDTH (μs) Figure 3. LED Trigger Current vs. Ambient Temperature Figure 4. LED Trigger Current vs. LED Pulse Width 10000 4 IDRM − LEAKAGE CURRENT (nA) IH (NORMALIZED) =HI(TA) / IH(TA=25°C) 0 Figure 2. On−State Characteristics Figure 1. LED Forward Voltage vs. Forward Current 0.6 −40 −1 VTM − ON−STATE VOLTAGE (V) NORMALIZED TO AT= 25°C 3 2 1 0 −40 −20 0 20 40 60 80 VDRM = 800 V 1000 100 10 1 0.1 −40 100 TA − AMBIENT TEMPERATURE (°C) −20 0 20 40 60 80 100 TA − AMBIENT TEMPERATURE (°C) Figure 6. Leakage Current vs. Ambient Temperature Figure 5. Holding Current vs. Ambient Temperature www.onsemi.com 5 MOC3071M, MOC3072M, MOC3073M APPLICATIONS INFORMATION Basic Triac Driver Circuit LED Trigger Current versus Pulse Width The random phase triac drivers MOC3071M, MOC3072M and MOC3073M can allow snubberless operations in applications where load is resistive and the external generated noise in the AC line is below its guaranteed dv/dt withstand capability. For these applications, a snubber circuit is not necessary when a noise insensitive power triac is used. Figure 7 shows the circuit diagram. The triac driver is directly connected to the triac main terminal 2 and a series resistor R which limits the current to the triac driver. Current limiting resistor R must have a minimum value which restricts the current into the driver to maximum 1 A. The power dissipation of this current limiting resistor and the triac driver is very small because the power triac carries the load current as soon as the current through driver and current limiting resistor reaches the trigger current of the power triac. The switching transition times for the driver is only one micro second and for power triacs typical four micro seconds. Random phase triac drivers are designed to be phase controllable. They may be triggered at any phase angle within the AC sine wave. Phase control may be accomplished by an AC line zero cross detector and a variable pulse delay generator which is synchronized to the zero cross detector. The same task can be accomplished by a microprocessor which is synchronized to the AC zero crossing. The phase controlled trigger current may be a very short pulse which saves energy delivered to the input LED. LED trigger pulse currents shorter than 100 ms must have increased amplitude as shown on Figure 4. This graph shows the dependency of the trigger current IFT versus the pulse width. IFT in this graph is normalized in respect to the minimum specified IFT for static condition, which is specified in the device characteristic. The normalized IFT has to be multiplied with the devices guaranteed static trigger current. Example: IFT = 10 mA, Trigger PW = 4 ms IFT (pulsed) = 10 mA x 3 = 30 mA Triac Driver Circuit for Noisy Environments When the transient rate of rise and amplitude are expected to exceed the power triacs and triac drivers maximum ratings a snubber circuit as shown in Figure 8 is recommended. Fast transients are slowed by the R−C snubber and excessive amplitudes are clipped by the Metal Oxide Varistor MOV. Minimum LED Off Time in Phase Control Applications In phase control applications, one intends to be able to control each AC sine half wave from 0° to 180°. Turn on at 0° means full power and turn on at 180° means zero power. This is not quite possible in reality because triac driver and triac have a fixed turn on time when activated at zero degrees. At a phase control angle close to 180° the driver’s turn on pulse at the trailing edge of the AC sine wave must be limited to end 200 ms before AC zero cross as shown in Figure 10. This assures that the triac driver has time to switch off. Shorter times may cause loss of control at the following half cycle. Triac Driver Circuit for Extremely Noisy Environments As specified in the noise standards IEEE472 and IEC255−4. Industrial control applications do specify a maximum transient noise dv/dt and peak voltage which is super−imposed onto the AC line voltage. In order to pass this environment noise test a modified snubber network as shown in Figure 9 is recommended. Static dv/dt Critical rate of rise of off−state voltage or static dv/dt is a triac characteristic that rates its ability to prevent false triggering in the event of fast rising line voltage transients when it is in the off−state. When driving a discrete power triac, the triac driver optocoupler switches back to off−state once the power triac is triggered. However, during the commutation of the power triac in application where the load is inductive, both triacs are subjected to fast rising voltages. The static dv/dt rating of the triac driver optocoupler and the commutating dv/dt rating of the power triac must be taken into consideration in snubber circuit design to prevent false triggering and commutation failure. LED Trigger Current versus Temperature Recommended operating LED control current IF lies between the guaranteed IFT and absolute maximum IF. Figure 3 shows the increase of the trigger current when the device is expected to operate at an ambient temperature below 25°C. Multiply the datasheet guaranteed IFT with the normalized IFT shown on this graph and an allowance for LED degradation over time. Example: IFT = 10 mA, LED degradation factor = 20% IFT at −40°C = 10 mA x 1.25 x 120% = 15 mA www.onsemi.com 6 MOC3071M, MOC3072M, MOC3073M TRIAC DRIVER VCC R POWER TRIAC RLED AC LINE CONTROL Q LOAD RLED = (VCC – VFLED – VSAT Q) / IFT R = VPAC / ITSM RET. Figure 7. Basic Driver Circuit TRIAC DRIVER VCC RLED R POWER TRIAC RS CS CONTROL AC LINE MOV Q LOAD Typical Snubber values R S = 33 Ω, C S = 0.01 μF MOV (Metal Oxide Varistor) protects power triac and driver from transient overvoltages > V DRM max RET. Figure 8. Triac Driver Circuit for Noisy Environments POWER TRIAC TRIAC DRIVER VCC R RLED RS MOV CONTROL AC LINE CS Q LOAD RET. Recommended snubber to pass IEEE472 and IEC255−4 noise tests RS = 47 Ω, C S = 0.01 μF Figure 9. Triac Driver Circuit for Extremely Noisy Environments 0° AC Line 180° LED PW LED Current LED turn off min. 200μs Figure 10. Minimum Time for LED Turn Off to Zero Crossing www.onsemi.com 7 MOC3071M, MOC3072M, MOC3073M Temperature (5C) Reflow Profile TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 Max. Ramp−up Rate = 3°C/s Max. Ramp−down Rate = 6°C/s tP Tsmax tL Preheat Area Tsmin ts 0 120 240 360 Time 25°C to Peak Time (seconds) Figure 11. Reflow Profile Pb−Free Assembly Profile Profile Freature Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds Ramp−up Rate (TL to TP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 seconds to 150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum www.onsemi.com 8 MOC3071M, MOC3072M, MOC3073M ORDERING INFORMATION Part Number Package Shipping MOC3071M DIP 6−Pin 50 Units / Tube MOC3071SM SMT 6−Pin (Lead Bend) 50 Units / Tube MOC3071SR2M SMT 6−Pin (Lead Bend) 1000 Units / Tape & Reel MOC3071VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube MOC3071SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube MOC3071SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 Units / Tape & Reel MOC3071TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube NOTE: The product orderable part number system listed in this table also applies to the MOC3072M, and MOC3073M product families. MARKING INFORMATION Figure 12. Top Mark Top Mark Definitions 1 ON Semiconductor Logo 2 Device Number 3 DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) 4 One−Digit Year Code, e.g., ‘5’ 5 Two−Digit Work Week, Ranging from ‘01’ to ‘53’ 6 Assembly Package Code www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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