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MOC3081M, MOC3082M, MOC3083M
6-Pin DIP Zero-Cross Triac Driver Optocoupler
(800 Volt Peak)
Features
Description
• Simplifies Logic Control of 240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and
Radiated Line Noise
• 800 V Peak Blocking Voltage
• Superior Static dv/dt
– 1500 V/μs Typical, 600 V/μs Guaranteed
• Safety and Regulatory Approvals
– UL1577, 4,170 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
The MOC3081M, MOC3082M and MOC3083M devices
consist of a GaAs infrared emitting diode optically
coupled to a monolithic silicon detector performing the
function of a zero voltage crossing bilateral triac driver.
They are designed for use with a discrete power triac in
the interface of logic systems to equipment powered
from 240 VAC lines, such as solid-state relays, industrial
controls, motors, solenoids and consumer appliances,
etc.
Applications
•
•
•
•
•
•
•
•
Solenoid/Valve Controls
Lighting Controls
Static Power Switches
AC Motor Starters
Temperature Controls
E.M. Contactors
AC Motor Drives
Solid State Relays
Schematic
Package Outlines
ANODE 1
6 MAIN TERM.
5 NC*
CATHODE 2
N/C 3
ZERO
CROSSING
CIRCUIT
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
Figure 2. Package Outlines
www.fairchildsemi.com
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
November 2015
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
I–IV
< 150 VRMS
I–IV
< 300 VRMS
Climatic Classification
40/85/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
6000
Vpeak
External Creepage
≥7
mm
External Clearance
≥7
mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥ 10
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.5
mm
RIO
Insulation Resistance at TS, VIO = 500 V
> 109
Ω
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
www.fairchildsemi.com
2
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Parameter
Value
Unit
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +85
°C
TJ
TSOL
PD
Junction Temperature Range
-40 to +100
°C
260 for 10 seconds
°C
Total Device Power Dissipation at 25°C Ambient
250
mW
Derate Above 25°C
2.94
mW/°C
Lead Solder Temperature
EMITTER
IF
Continuous Forward Current
60
mA
VR
Reverse Voltage
6
V
Total Power Dissipation at 25°C Ambient
120
mW
Derate Above 25°C
1.41
mW/°C
VDRM
Off-State Output Terminal Voltage
800
V
ITSM
Peak Non-Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave)
1
A
PD
DETECTOR
PD
Total Power Dissipation at 25°C Ambient
150
mW
Derate Above 25°C
1.76
mW/°C
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
www.fairchildsemi.com
3
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 30 mA
IR
Reverse Leakage Current
VR = 6 V
1.3
1.5
V
0.005
100
μA
10
500
nA
DETECTOR
IDRM1
dv/dt
Peak Blocking Current, Either Direction
VDRM = 800 V, IF = 0(1)
(2)
Critical Rate of Rise of Off-State Voltage IF = 0 (Figure 11)
600
1500
Min.
Typ.
V/μs
Transfer Characteristics
Symbol
IFT
VTM
IH
Parameter
LED Trigger Current
Test Conditions
(Rated IFT)
Main Terminal
Voltage = 3 V(3)
Peak On-State Voltage,
Either Direction
ITM = 100 mA peak,
IF = rated IFT
Device
Max.
MOC3081M
15
MOC3082M
10
MOC3083M
5
Holding Current, Either Direction
All
1.8
All
500
3.0
Unit
mA
V
μA
Zero Crossing Characteristics
Symbol
Parameter
Test Conditions
VINH
Inhibit Voltage (MT1-MT2 voltage
above which device will not trigger)
IF = Rated IFT
IDRM2
Leakage in Inhibited
State
IF = Rated IFT,
VDRM = 600 V, off-state
Min.
Typ.
Max.
Unit
12
20
V
2
mA
Max.
Unit
Isolation Characteristics
Symbol
VISO
Parameter
Isolation
Voltage(4)
Test Conditions
f = 60 Hz, t = 1 Minute
Min.
Typ.
4170
VACRMS
RISO
Isolation Resistance
VI-O = 500 VDC
1011
CISO
Isolation Capacitance
V = 0 V, f = 1 MHz
0.2
Ω
pF
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating
IF lies between max IFT (15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute
maximum IF (60 mA).
4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
www.fairchildsemi.com
4
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Electrical Characteristics
1.6
1.7
1.5
VTM = 3V
NORMALIZED TO TA = 25°C
1.5
1.4
1.4
IFT, NORMALIZED
VF, FORWARD VOLTAGE (V)
1.6
1.3
TA = -40°C
1.2
TA = 25°C
1.1
TA = 85°C
1.0
1.3
1.2
1.1
1.0
0.9
0.9
0.8
0.7
0.1
1
10
0.8
-40
100
-20
IF, LED FORWARD CURRENT (mA)
20
40
60
80
100
Figure 4. Trigger Current Vs. Temperature
Figure 3. LED Forward Voltage vs. Forward Current
16
10000
TA = 25°C
NORMALIZED TO PWIN >> 100μs
14
IDRM, LEAKAGE CURRENT (nA)
IFT, LED TRIGGER CURRENT (NORMALIZED)
0
TA, AMBIENT TEMPERATURE (°C)
12
10
8
6
4
1000
100
10
1
2
0.1
-40
0
1
10
100
0
20
40
60
80
100
TA, AMBIENT TEMPERATURE (°C)
PWIN, LED TRIGGER PULSE WIDTH (μs)
Figure 6. Leakage Current, IDRM vs. Temperature
Figure 5. LED Current Required to Trigger vs.
LED Pulse Width
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
-20
www.fairchildsemi.com
5
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Typical Performance Curves
800
2.4
2.2
IF = RATED IFT
NORMALIZED TO TA = 25°C
ITM, ON-STATE CURRENT (mA)
2.0
IDRM2, NORMALIZED
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40
TA = 25°C
600
400
200
0
-200
-400
-600
-20
0
20
40
60
80
-800
100
-4
-3
-2
TA, AMBIENT TEMPERATURE (°C)
0
1
2
3
4
80
100
Figure 8. On-State Characteristics
Figure 7. IDRM2, Leakage in Inhibit State vs. Temperature
3.2
1.20
2.8
1.15
NORMALIZED TO TA = 25°C
1.10
2.4
VINH, NORMALIZED
IH, HOLDING CURRENT (NORMALIZED)
-1
VTM, ON-STATE VOLTAGE (VOLTS)
2.0
1.6
1.2
1.05
1.00
0.95
0.90
0.8
0.85
0.4
0.0
-40
0.80
-40
-20
0
20
40
60
80
-20
0
20
40
60
TA, AMBIENT TEMPERATURE (°C)
100
TA, AMBIENT TEMPERATURE (°C)
Figure 9. IH, Holding Current vs. Temperature
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
Figure 10. Inhibit Voltage vs. Temperature
www.fairchildsemi.com
6
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Typical Performance Curves (Continued)
RTEST
2. 100x scope probes are used, to allow high
speeds and voltages.
10 kΩ
CTEST
PULSE
INPUT
MERCURY
WETTED
RELAY
3. The worst-case condition for static dv/dt is
established by triggering the D.U.T. with a
normal LED input current, then removing the
current. The variable RTEST allows the dv/dt to
be gradually increased until the D.U.T.
continues to trigger in response to the applied
voltage pulse, even after the LED current has
been removed. The dv/dt is then decreased
until the D.U.T. stops triggering. τRC is
measured at this point and recorded.
X100
SCOPE
PROBE
D.U.T.
Figure 11. Static dv/dt Test Circuit
Vmax = 800 V
APPLIED VOLTAGE
WAVEFORM
504 V
dv/dt =
0 VOLTS
0.63 Vmax
tRC
504
= t
RC
tRC
Figure 12. Static dv/dt Test Waveform
Typical circuit for use when hot line switching is required. In this circuit the “hot” side of the line is switched and the load
connected to the cold or neutral side. The load may be connected to either the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT of the part, 15 mA for the MOC3081M, 10 mA for the MOC3082M,
and 5 mA for the MOC3083M. The 39 Ω resistor and 0.01 μF capacitor are for snubbing of the triac and may or may
not be necessary depending upon the particular triac and load use.
Rin
1
6
360 Ω
HOT
VCC
2
MOC3081M
MOC3082M
MOC3083M
3
5
FKPF12N80
39*
4
240 VAC
0.01
330 Ω
LOAD
NEUTRAL
* For highly inductive loads (power factor < 0.5), change this value to 360Ω.
Figure 13. Hot-Line Switching Application Circuit
240 VAC
R1
1
VCC
Rin
2
3
D1
6
MOC3081M
MOC3082M
MOC3083M
SCR
5
4
SCR
360 Ω
R2
D2
LOAD
Figure 14. Inverse-Parallel SCR Driver Circuit
Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors,
R1 and R2, are optional 330 Ω.
Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only.
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
www.fairchildsemi.com
7
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
1. The mercury wetted relay provides a high
speed repeated pulse to the D.U.T.
800V
Vdc
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Reflow Profile
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
tP
Tsmax
tL
Preheat Area
Tsmin
ts
240
120
360
Time 25°C to Peak
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60 seconds to 120 seconds
Ramp-up Rate (TL to TP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 seconds to 150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second maximum
Time 25°C to Peak Temperature
8 minutes maximum
Figure 15. Reflow Profile
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
www.fairchildsemi.com
8
Part Number
Package
Packing Method
MOC3081M
DIP 6-Pin
Tube (50 Units)
MOC3081SM
SMT 6-Pin (Lead Bend)
Tube (50 Units)
MOC3081SR2M
SMT 6-Pin (Lead Bend)
Tape and Reel (1000 Units)
MOC3081VM
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
MOC3081SVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
MOC3081SR2VM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
MOC3081TVM
DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Note:
5. The product orderable part number system listed in this table also applies to the MOC3082M, and MOC3083M,
product families.
Marking Information
1
MOC3081
2
X YY Q
6
V
3
5
4
Figure 16. Top Mark
Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component
ordered with this option)
4
One-Digit Year Code, e.g., ‘5’
5
Two-Digit Work Week, Ranging from ‘01’ to ‘53’
6
Assembly Package Code
©2005 Fairchild Semiconductor Corporation
MOC3081M, MOC3082M, MOC3083M Rev. 1.5
www.fairchildsemi.com
9
MOC3081M, MOC3082M, MOC3083M — 6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 Volt Peak)
Ordering Information(5)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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