MOC3083SR2VM

6-Pin DIP Zero-Cross Triac Driver Optocoupler (800 V Peak) MOC3081M, MOC3082M, MOC3083M www.onsemi.com Description The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 240 VAC lines, such as solid−state relays, industrial controls, motors, solenoids and consumer appliances, etc. PDIP6 8.51x6.35, 2.54P CASE 646BY PDIP6 8.51x6.35, 2.54P CASE 646BZ Features • Simplifies Logic Control of 240 VAC Power • Zero Voltage Crossing to Minimize Conducted and Radiated Line • • • • Noise 800 V Peak Blocking Voltage Superior Static dv/dt ♦ 1500 V/ms Typical, 600 V/ms Guaranteed Safety and Regulatory Approvals ♦ UL1577, 4,170 VACRMS for 1 Minute ♦ DIN EN/IEC60747−5−5 These are Pb−Free Devices PDIP6 8.51x6.35, 2.54P CASE 646BX ANODE 1 6 MAIN TERM. Applications • • • • • • • • Solenoid/Valve Controls Lighting Controls Static Power Switches AC Motor Starters Temperature Controls E.M. Contactors AC Motor Drives Solid State Relays CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2019 September, 2019 − Rev. 1 1 Publication Order Number: MOC3083M/D MOC3081M, MOC3082M, MOC3083M SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Characteristics Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over−Voltage 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm VPR DTI RIO Parameter > Insulation Resistance at TS, VIO = 500 V www.onsemi.com 2 109 W MOC3081M, MOC3082M, MOC3083M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Parameters Value Unit Total Device TSTG Storage Temperature −40 to 150 °C TOPR Operating Temperature −40 to 85 °C TJ TSOL PD −40 to 100 °C 260 for 10 seconds °C Total Device Power Dissipation at 25°C Ambient 250 mW Derate Above 25°C 2.94 mW/°C Junction Temperature Range Lead Solder Temperature Emitter IF Continuous Forward Current 60 mA VR Reverse Voltage 6 V Total Power Dissipation at 25°C Ambient 120 mW Derate Above 25°C 1.41 mW/°C VDRM Off−State Output Terminal Voltage 800 V ITSM Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A PD Detector PD Total Power Dissipation at 25°C Ambient 150 mW Derate Above 25°C 1.76 mW/°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 MOC3081M, MOC3082M, MOC3083M ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Test Conditions Min. Typ. Max. Unit 1.3 1.5 V 0.005 100 mA 10 500 nA Emitter VF Input Forward Voltage IF = 30 mA IR Reverse Leakage Current VR = 6 V IDRM1 Peak Blocking Current, Either Direction VDRM = 800 V, IF = 0(1) dv/dt Critical Rate of Rise of Off−State Voltage IF = 0 (Figure 10) (2) Detector 600 V/ms 1500 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load−driving thyristor(s) only. TRANSFER CHARACTERISTICS Symbol IFT DC Characteristics LED Trigger Current (Rated IFT) Test Conditions Main Terminal Voltage = 3 V(3) Max. Unit MOC3081M Device Min. Typ. 15 mA MOC3082M 10 MOC3083M VTM IH Peak On−State Voltage, Either Direction ITM = 100 mA peak, IF = rated IFT Holding Current, Either Direction 5 All 1.8 All 500 3.0 V mA 3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute maximum IF (60 mA). ZERO CROSSING CHARACTERISTICS Symbol Parameters Test Conditions VINH Inhibit Voltage (MT1−MT2 voltage above which device will not trigger) IF = Rated IFT IDRM2 Leakage in Inhibited State IF = Rated IFT, VDRM = 800 V, off−state Min. Typ. Max. Unit 12 20 V 2 mA Max. Unit ISOLATION CHARACTERISTICS Symbol VISO Parameters Isolation Voltage (4) Test Conditions f = 60 Hz, t = 1 Minute Min. Typ. 4170 VACRMS RISO Isolation Resistance VI−O = 500 VDC 1011 CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 W pF 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 MOC3081M, MOC3082M, MOC3083M TYPICAL PERFORMANCE CURVES 1.7 1.6 1.6 1.5 VTM = 3 V NORMALIZED TO T A = 25_C VF, FORWARD VOLTAGE (V) 1.5 1.4 IFT, NORMALIZED 1.4 1.3 TA = −40_C 1.2 TA = 25_C 1.1 TA = 85_C 1.0 1.3 1.2 1.1 1.0 0.9 0.9 0.8 0.7 0.1 1 10 0.8 −40 100 IF, LED FORWARD CURRENT (mA) 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (_C) Figure 2. LED Forward Voltage vs. Forward Current Figure 3. Trigger Current vs. Temperature 16 10000 TA = 25_C NORMALIZED TO PW IN >> 100 ms 14 IDRM , LEAKAGE CURRENT (nA) IFT, LED TRIGGER CURRENT (NORMALIZED) −20 12 10 8 6 4 1000 100 10 1 2 0.1 −40 0 1 10 100 −20 0 20 40 60 80 100 TA , AMBIENT TEMPERATURE (_C) PWIN, LED TRIGGER PULSE WIDTH (ms) Figure 4. LED Current Required to Trigger vs. LED Pulse Width Figure 5. Leakage Current, IDRM vs. Temperature www.onsemi.com 5 MOC3081M, MOC3082M, MOC3083M TYPICAL PERFORMANCE CURVES (Continued) 2.4 2.2 800 IF = RATED I FT NORMALIZED TO T A = 25_C ITM, ON−STATE CURRENT (mA) 2.0 IDRM2, NORMALIZED 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 −40 TA = 25_C 600 400 200 0 −200 −400 −600 −20 0 20 40 60 80 −800 −4 100 −3 TA, AMBIENT TEMPERATURE (_C) −2 −1 0 1 2 3 4 VTM, ON−STATE VOLTAGE (VOLTS) Figure 6. IDRM2, Leakage in Inhibit State vs. Temperature Figure 7. On−State Characteristics 1.20 2.8 1.15 2.4 NORMALIZED TO T A = 25_C 1.10 2.0 VINH, NORMALIZED IH, HOLDING CURRENT (NORMALIZED) 3.2 1.6 1.2 0.8 0.4 0.0 −40 1.05 1.00 0.95 0.90 0.85 −20 0 20 40 60 80 0.80 −40 100 −20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (_C) TA, AMBIENT TEMPERATURE (_C) Figure 8. IH, Holding Current vs. Temperature Figure 9. Inhibit Voltage vs. Temperature www.onsemi.com 6 100 MOC3081M, MOC3082M, MOC3083M 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. 800 V Vdc RTEST 2. 100x scope probes are used, to allow high speeds and voltages. 10 kW CTEST PULSE INPUT MERCURY WETTED RELAY D.U.T. 3. The worst−case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable R TEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. t RC is measured at this point and recorded. PROBE Figure 10. Static dv/dt Test Circuit Vmax = 800 V APPLIED VOLTAGE WAVEFORM 504 V 0.63 Vmax dv/dt = 0 VOLTS tRC 504 = t RC tRC Figure 11. Static dv/dt Test Waveform MOC3082M, and 5 mA for the MOC3083M. The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load use. Typical circuit for use when hot line switching is required. In this circuit the “hot” side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. RIN is calculated so that IF is equal to the rated IFT of the part, 15 mA for the MOC3081M, 10 mA for the Rin 1 6 360 W HOT VCC 2 MOC3081M MOC3082M MOC3083M 5 FKPF12N80 39* 4 3 240 VAC 0.01 330 W LOAD NEUTRAL * For highly inductive loads (power factor < 0.5), change this value to 360 W. Figure 12. Hot−Line Switching Application Circuit 240 VAC R1 1 VCC Rin 2 3 D1 6 MOC3081M MOC3082M MOC3083M SCR 5 4 SCR 360 W R2 D2 LOAD Figure 13. Inverse−Parallel SCR Driver Circuit Suggested method of firing two, back−to−back SCR’s with an ON Semiconductor triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 W. NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. www.onsemi.com 7 MOC3081M, MOC3082M, MOC3083M Temperature (5C) Reflow Profile TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 Max. Ramp−up Rate = 3°C/s Max. Ramp−down Rate = 6°C/s tP Tsmax tL Preheat Area Tsmin ts 0 120 240 360 Time 25°C to Peak Time (seconds) Figure 14. Reflow Profile Profile Freature Pb−Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds Ramp−up Rate (TL to TP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 seconds to 150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum www.onsemi.com 8 MOC3081M, MOC3082M, MOC3083M ORDERING INFORMATION Part Number Package Shipping MOC3081M DIP 6−Pin 50 Units / Tube MOC3081SM SMT 6−Pin (Lead Bend) 50 Units / Tube MOC3081SR2M SMT 6−Pin (Lead Bend) 1000 Units / Tape & Reel MOC3081VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube MOC3081SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube MOC3081SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 Units / Tape & Reel MOC3081TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, and MOC3083M product families. MARKING INFORMATION ON MOC3081 2 X YY Q 6 V 3 1 5 4 Figure 15. Top Mark Top Mark Definitions 1 ON Semiconductor Logo 2 Device Number 3 DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) 4 One−Digit Year Code, e.g., ‘5’ 5 Two−Digit Work Week, Ranging from ‘01’ to ‘53’ 6 Assembly Package Code www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BX ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13449G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BY ISSUE A DATE 15 JUL 2019 A B DOCUMENT NUMBER: DESCRIPTION: 98AON13450G PDIP6 8.51x6.35, 2.54P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 8.51x6.35, 2.54P CASE 646BZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13451G PDIP6 8.51X6.35, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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