MOC8050TVM

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The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) No Base Connection for Improved Noise Immunity ■ ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Appliances, Measuring Instruments ■ I/O Interface for Computers ■ Programmable Controllers ■ Portable Electronics ■ Interfacing and Coupling Systems of Different Potentials and Impedance Solid State Relays ■ Schematic Package Outlines 6 N/C ANODE 1 5 COLLECTOR CATHODE 2 N/C 3 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) April 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I–IV < 300 VRMS I–IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm TS Case Temperature(1) 175 °C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω Note: 1. Safety limit values – maximum values allowed in the event of a failure. ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 2 MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit -40 to +125 °C TOTAL DEVICE TSTG TOPR TJ TSOL PD Storage Temperature Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 °C 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 2.94 mW/°C Lead Solder Temperature EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 3 V LED Power Dissipation @ TA = 25°C 120 mW Derate Above 25°C 1.41 mW/°C Continuous Collector Current 150 mA Collector-Emitter Voltage MOC8021M 50 V PD DETECTOR IC VCEO MOC8050M PD 80 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 3 MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Absolute Maximum Ratings TA = 25°C Unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 10 mA 1.18 2.00 V IR Reverse Leakage Current VR = 3.0 V 0.001 10 µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage MOC8021M IC = 1.0 mA, IF = 0 MOC8050M Emitter-Collector Breakdown Voltage IE = 100 µA, IF = 0 ICEO Collector-Emitter Dark Current VCE = 60 V, IF = 0 CCE Capacitance VCE = 0 V, f = 1 MHz BVECO Transfer Characteristics Symbol Parameter Test Conditions 50 100 V 80 100 V 5 10 V 1 µA 8 Min. Typ. pF Max. Unit DC CHARACTERISTICS Current Transfer Ratio, Collector to Emitter CTR MOC8021M IF = 10 mA, VCE = 5 V MOC8050M IF = 10 mA, VCE = 1.5 V 1,000 % 500 % AC CHARACTERISTICS ton Turn-on Time IF = 5 mA, VCC = 10 V, RL = 100 Ω 8.5 µs toff Turn-off Time IF = 5 mA, VCC = 10 V, RL = 100 Ω 95 µs Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 Min. Typ. 4170 VI-O = 0 V, f = 1 MHz VI-O = ±500 VDC, TA = 25°C Unit VACRMS 0.2 1011 Max. pF Ω www.fairchildsemi.com 4 MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Electrical Characteristics NORMALIZED CTR – CURRENT TRANSFER RATIO 1.8 VF - FORWARD VOLTAGE (V) 1.6 1.4 TA = -40oC 1.2 TA = 25oC 1.0 TA = 110oC 0.8 0.6 0.1 1 10 100 Normalized to IF = 10 mA VCE = 10 V o TA = 25 C o o o TA = -40 C TA = 0 C, 25 C 1 o TA = 70 C TA = 110oC 0.1 0.1 1 IF - LED FORWARD CURRENT (mA) 10 100 IF - FORWARD CURRENT (mA) Figure 4. Normalized CTR vs. Forward Current Figure 3. LED Forward Voltage vs. Forward Current 1.6 IF = 10 mA = 10 V V Normalized to TA = 25 C CE 1.4 VCC = 10 V RL = 1k Ω o TA = 25oC 100 TON - TURN-ON TIME (μs) NORMALIZED CTR – CURRENT TRANSFER RATIO 1000 1.2 1.0 0.8 RL = 100 Ω RL = 10 Ω 10 1 0.6 0.4 -40 -20 0 20 40 60 80 100 0.1 0.1 120 1 10 100 IF - FORWARD CURRENT (mA) Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. Turn-on Time vs. Forward Current NORMALIZED ICE - COLLECOTR-EMITTER CURRENT TA - AMBIENT TEMPERATURE (°C) VCC = 10V o TA = 25 C TOFF - TURN-ON TIME (μs) 1000 RL = 1KΩ 100 RL = 100Ω RL = 10Ω 10 1 0 1 10 16 Normalized to: IF = 1 mA, VCE = 5V o TA = 25 C 14 IF = 10 mA 12 10 IF = 5 mA 8 6 4 IF = 2 mA 2 IF = 1 mA 0 100 0 1 2 3 4 5 6 7 8 9 10 IF - FORWARD CURRENT (mA) VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Turn-off Time vs. Forward Current Figure 8. Normalized Collector-Emitter Current vs. Collector-Emitter Voltage ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 5 MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Typical Performance Curves ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 100,000 V = 10 V CE 10,000 1.000 100 10 1 0.1 0.01 -40 -20 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE (°C) Figure 9. Dark Current vs. Ambient Temperature Switching Time Test Circuit and Waveform TEST CIRCUIT WAVE FORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 10. Switching Time Test Circuit and Waveform ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 6 MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Typical Performance Curves (Continued) MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Reflow Profile Figure 11. Reflow Profile ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 7 Part Number Package Packing Method MOC8021M DIP 6-Pin Tube (50 Units) MOC8021SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC8021SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MOC8021VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8021SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8021SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) MOC8021TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the MOC8050M device. Marking Information 1 V 3 MOC8021 2 X YY Q 6 5 4 Figure 12. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “5” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code ©2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 8 MOC8021M, MOC8050M — 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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