MOCD207R2VM

MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M 8-pin SOIC Dual-Channel Phototransistor Output Optocoupler www.onsemi.com These devices consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. They are ideally suited for high−density applications, and eliminate the need for through−the−board mounting. Features • Closely Matched Current Transfer Ratios • Minimum BVCEO of 70 V Guaranteed • • • • • SOIC8 M SUFFIX CASE 751DZ – MOCD207M, MOCD208M, MOCD213M Minimum BVCEO of 30 V Guaranteed – MOCD211M, MOCD217M Low LED Input Current Required for Easier Logic Interfacing – MOCD217M Convenient Plastic SOIC−8 Surface Mountable Package Style, with 0.050″ Lead Spacing Safety and Regulatory Approvals: – UL1577, 2,500 VACRMS for 1 Minute – DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage These are Pb−Free Devices MARKING DIAGRAM 1 D207 V X YY S 2 6 Applications • Feedback Control Circuits • Interfacing and Coupling Systems of Different Potentials and Impedances 3 • General Purpose Switching Circuits • Monitor and Detection Circuits ANODE 1 1 8 COLLECTOR 1 CATHODE 1 2 4 5 1 − Logo 2 − Device Number 3 − DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option) 4 − One−Digit Year Code, e.g., “4” 5 − Digit Work Week, Ranging from “01” to “53” 6 − Assembly Package Code 7 EMITTER 1 ANODE 2 3 6 COLLECTOR 2 CATHODE 2 4 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. 5 EMITTER 2 Figure 1. Schematic © Semiconductor Components Industries, LLC, 2005 October, 2018 − Rev. 6 1 Publication Order Number: MOCD217M/D MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M Safety and Insulation Ratings As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Climatic Classification < 150 VRMS I−IV < 300 VRMS I−III 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over−Voltage VPR Parameter 4000 Vpeak External Creepage ≥4 mm External Clearance ≥4 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm TS Case Temperature (Note 1) 150 °C Input Current (Note 1) 200 mA Output Current (Note 1) 300 mW Insulation Resistance at TS, VIO = 500 V (Note 1) >109 W IS,INPUT PS,OUTPUT RIO 1. Safety limit values – maximum values allowed in the event of a failure. www.onsemi.com 2 MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit Storage Temperature −40 to +125 °C TA Ambient Operating Temperature −40 to +100 °C TJ Junction Temperature −40 to +125 °C 260 for 10 seconds °C TOTAL DEVICE TSTG TSOL PD Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C 240 mW Derate Above 25°C 2.94 mW/°C Continuous Forward Current 60 mA Forward Current – Peak (PW = 100 ms, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25°C 90 mW Derate Above 25°C 0.8 mW/°C Continuous Collector Current 150 mA Collector−Emitter Voltage − MOCD207M, MOCD208M, MOCD213M 70 V − MOCD211M, MOCD217M 30 V Emitter−Collector Voltage 7 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C EMITTER IF IF (pk) DETECTOR IC VCEO VECO PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Device Test Conditions Min Typ Max Unit EMITTER VF IR CIN Input Forward Voltage MOCD217M IF = 1 mA − 1.05 1.3 V MOCD213M IF = 10 mA − 1.15 1.5 V MOCD207M, MOCD208M, MOCD211M IF = 30 mA − 1.25 1.5 V Reverse Leakage Current All VR = 6 V − 0.001 100 mA Input Capacitance All − 18 − pF Collector−Emitter Dark Current All − 1.0 50 nA VCE = 10 V, TA = 100°C − 1.0 − mA Collector−Emitter Breakdown Voltage MOCD211M, MOCD217M IC = 100 mA 30 100 − V MOCD207M, MOCD208M, MOCD213M IC = 100 mA 70 100 − V DETECTOR ICEO BVCEO VCE = 10 V, TA = 25°C BVECO Emitter−Collector Breakdown Voltage All IE = 100 mA 7 10 − V CCE Collector−Emitter Capacitance All f = 1.0 MHz, VCE = 0 − 7 − pF Collector−Output Current MOCD207M IF = 10 mA, VCE = 5 V 100 − 200 % MOCD208M IF = 10 mA, VCE = 5 V 40 − 125 % MOCD211M IF = 10 mA, VCE = 5 V 20 − − % MOCD213M IF = 10 mA, VCE = 5 V 100 − − % MOCD217M IF = 1 mA, VCE = 5 V 100 − − % MOCD207M, MOCD208M, MOCD211M, MOCD213M IC = 2 mA, IF = 10 mA − − 0.4 V MOCD217M IC = 100 mA, IF = 1 mA − − 0.4 V COUPLED CTR VCE(SAT) Collector−Emitter Saturation Voltage ton Turn−On Time All IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 7) − 7.5 − ms toff Turn−Off Time All IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 7) − 5.7 − ms tr Rise Time All IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 7) − 3.2 − ms tf Fall Time All IC = 2 mA, VCC = 10 V, RL = 100 W (Figure 7) − 4.7 − ms VISO Input−Output Isolation Voltage All t = 1 Minute 2500 − − VACRMS CISO Isolation Capacitance All VI−O = 0 V, f = 1 MHz − 0.2 − pF 1011 − − W ISOLATION RISO Isolation Resistance All VI−O = ±500 VDC, TA = 25°C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M TYPICAL CHARACTERISTICS VF – FORWARD VOLTAGE (V) 1.7 1.6 1.5 1.4 TA = –55_C 1.3 1.2 TA = 25_C 1.1 TA = 100_C 1.0 1 10 10 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.8 100 VCE = 5 V NORMALIZED TO I F = 10 mA 1 0.1 IF – LED FORWARD CURRENT (mA) 0.01 0.1 10 100 Figure 3. Output Current vs. Input Current I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 1 NORMALIZED TO TA = 25_C 0.1 −80 1 IF – LED INPUT CURRENT (mA) 10 −60 −40 −20 0 20 40 60 80 100 120 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF = 10 mA NORMALIZED TO VCE = 5 V 0.0 0 1 2 Figure 4. Output Current vs. Ambient Temperature VCE = 10 V 100 10 1 0.1 0 4 5 6 7 8 9 10 Figure 5. Output Current vs. Collector−Emitter Voltage 10000 1000 3 V CE – COLLECTOR−EMITTER VOLTAGE (V) TA – AMBIENT TEMPERATURE (_C) I CEO – COLLECTOR −EMITTER DARK CURRENT (nA) I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) Figure 2. LED Forward Voltage vs. Forward Current 20 40 60 80 TA – AMBIENT TEMPERATURE ( _C) Figure 6. Dark Current vs. Ambient Temperature www.onsemi.com 5 100 MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M SWITCHING TIME TEST CIRCUIT AND WAVEFORMS VCC = 10 V INPUT PULSE IC IF RL INPUT 10% OUTPUT OUTPUT PULSE 90% RBE tr tf ton toff Adjust IF to produce IC = 2 mA Figure 7. Switching Time Test Circuit and Waveforms Temperature (_C) REFLOW PROFILE TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 Max. Ramp−up Rate = 3°C/S Max. Ramp−down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 0 120 240 360 Time 25°C to Peak Time (seconds) Figure 8. Reflow Profile Profile Feature Pb−Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60 − 120 seconds Ramp−up Rate (tL to tP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 − 150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp−down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature 8 minutes maximum www.onsemi.com 6 MOCD207M, MOCD208M, MOCD211M, MOCD213M, MOCD217M ORDERING INFORMATION Part Number Package Shipping MOCD207M Small Outline 8−Pin 100 Units / Tube MOCD207R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD207VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube MOCD207R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel MOCD208M Small Outline 8−Pin 100 Units / Tube MOCD208R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD208VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube MOCD208R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel MOCD211M Small Outline 8−Pin 100 Units / Tube MOCD211R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD211VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube MOCD211R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel MOCD213M Small Outline 8−Pin 100 Units / Tube MOCD213R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD213VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube MOCD213R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel MOCD217M Small Outline 8−Pin 100 Units / Tube MOCD217R2M Small Outline 8−Pin 2500 Units / Tape & Reel MOCD217VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 100 Units / Tube MOCD217R2VM Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option 2500 Units / Tape & Reel www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751DZ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13733G SOIC8 DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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