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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MOC223M, MOCD223M
8-pin SOIC Darlington Output Optocouplers
Features
Description
• High Current Transfer Ratio of 500% Minimum at
IF = 1 mA
• Minimum BVCEO of 30 V Guaranteed
• Convenient Plastic SOIC-8 Surface Mountable
Package Style, with 0.050" Lead Spacing
• Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
The MOC223M consists of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
photodarlington detector, in a surface mountable, small
outline, plastic package. The MOCD223M is a dualchannel version of the MOC223M. They are ideally
suited for high density applications, and eliminates the
need for through the board mounting.
Package Outline
Applications
• Low Power Logic Circuits
• Interfacing and Coupling Systems of Different
Potentials and Impedances
• Telecommunications Equipment
• Portable Electronics
• Solid State Relays
Figure 1. Package Outline
Schematics
ANODE 1
8 N/C
CATHODE 2
8 COLLECTOR 1
LED 1 ANODE 1
LED 1 CATHODE 2
7 BASE
N/C 3
6 COLLECTOR
N/C 4
5 EMITTER
7 EMITTER 1
LED 2 ANODE 3
6 COLLECTOR 2
LED 2 CATHODE 4
MOC223M
5 EMITTER 2
MOCD223M
Figure 2. Schematics
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
www.fairchildsemi.com
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
July 2018
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
I–IV
< 150 VRMS
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
I–III
< 300 VRMS
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
Symbol
VPR
175
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over-Voltage
4000
Vpeak
External Creepage
≥4
mm
External Clearance
≥4
mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
mm
TS
Case Temperature(1)
150
°C
IS,INPUT
Current(1)
200
mA
300
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO = 500
V(1)
>
109
Ω
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
www.fairchildsemi.com
2
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Rating
Value
Unit
Storage Temperature
-40 to +125
°C
TA
Ambient Operating Temperature
-40 to +100
°C
TJ
Junction Temperature
TOTAL DEVICE
TSTG
TSOL
PD
-40 to +125
°C
260 for 10 seconds
°C
Total Device Power Dissipation @ TA = 25°C
240
mW
Derate Above 25°C
2.94
mW/°C
Continuous Forward Current
60
mA
Forward Current – Peak (PW = 100 µs, 120 pps)
1.0
A
Reverse Voltage
6.0
V
Lead Solder Temperature
EMITTER
IF
IF (pk)
VR
PD
LED Power Dissipation @ TA = 25°C
90
mW
Derate Above 25°C
0.8
mW/°C
Continuous Collector Current
150
mA
DETECTOR
IC
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage, MOC223M
70
V
VECO
Emitter-Collector Voltage
7
V
Detector Power Dissipation @ TA = 25°C
150
mW
Derate Above 25°C
1.76
mW/°C
PD
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
www.fairchildsemi.com
3
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 1.0 mA
1.08
1.3
V
IR
Reverse Leakage Current
VR = 6.0 V
0.001
100
µA
CIN
Input Capacitance
18
pF
DETECTOR
ICEO1
ICEO2
Collector-Emitter Dark Current
VCE = 5.0 V, TA = 25°C
1.0
50
nA
VCE = 5.0 V, TA = 100°C
1.0
µA
BVCEO
Collector-Emitter Breakdown
Voltage
IC = 100 µA
30
100
V
BVCBO
Collector-Base Breakdown
Voltage
IC = 100 µA
70
120
V
BVECO
Emitter-Collector Breakdown
Voltage
IE = 100 µA
7
10
V
CCE
Collector-Emitter Capacitance
f = 1.0 MHz, VCE = 0
5.5
pF
Current Transfer Ratio
IF = 1.0 mA, VCE = 5.0 V
1000
%
Collector-Emitter Saturation
Voltage
IC = 500 µA, IF = 1.0 mA
ton
Turn-On Time
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
10
µs
toff
Turn-Off Time
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
55
µs
tr
Rise Time
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
8
µs
tf
Fall Time
IF = 5.0 mA, VCC = 10 V, RL = 100 Ω
(Figure 8)
45
µs
COUPLED
CTR
VCE(sat)
500
1.0
V
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
Input-Output Isolation Voltage t = 1 Minute
CISO
Isolation Capacitance
RISO
Isolation Resistance
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
Min.
Typ.
2500
VI-O = 0 V, f = 1 MHz
VI-O = ±500 VDC, TA = 25°C
10
Unit
VACRMS
0.2
11
Max.
pF
Ω
www.fairchildsemi.com
4
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
Electrical Characteristics
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1.8
VF – FORWARD VOLTAGE (V)
1.7
1.6
1.5
1.4
TA = 55°C
1.3
1.2
TA = 25°C
1.1
TA = 100°C
1.0
1
10
1
VCE = 5 V
NORMALIZED TO I F = 1 mA
100
0.1
IF – LED FORWARD CURRENT (mA)
0.1
1
Figure 3. LED Forward Voltage vs. Forward Current
10
100
IF – LED INPUT CURRENT (mA)
Figure 4. Output Curent vs. Input Current
2.0
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
I C – OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1
0.1
IF = 1mA, VCE = 5 V
NORMALIZED TO TA = 25oC
0.01
-80
-60
-40
-20
0
20
40
60
80
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IF = 1 mA
NORMALIZED TO VCE = 5 V
0.0
120
0
1
2
3
4
5
6
7
8
9
10
o
TA – AMBIENT TEMPERATURE ( C)
VCE – COLLECTOR -EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
Figure 6. Output Current vs. Collector - Emitter Voltage
I CEO – COLLECTOR -EMITTER DARK CURRENT (nA)
10 5
10 4
VCE = 10 V
NORMALIZED TO TA= 25 oC
10 3
10 2
10 1
10 0
10 -1
10 -2
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Figure 7. Dark Current vs. Ambient Temperature
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
www.fairchildsemi.com
5
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
Typical Performance Curves
WAVE FORMS
VCC = 10 V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Figure 8. Switching Time Test Circuit and Waveform
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
www.fairchildsemi.com
6
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
TEST CIRCUIT
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
Reflow Profile
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
tP
Tsmax
tL
Preheat Area
Tsmin
ts
120
240
360
Time 25°C to Peak
Time (seconds)
Figure 9. Reflow Profile
Profile Freature
Pb-Free Assembly Profile
Temperature Minimum (Tsmin)
150°C
Temperature Maximum (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second maximum
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second maximum
Time 25°C to Peak Temperature
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
8 minutes maximum
www.fairchildsemi.com
7
Part Number
Package
Packing Method
MOC223M
Small Outline 8-Pin
Tube (100 Units)
MOC223R2M
Small Outline 8-Pin
Tape and Reel (2500 Units)
MOC223VM
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tube (100 Units)
MOC223R2VM
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tape and Reel (2500 Units)
MOCD223M
Small Outline 8-Pin
Tube (100 Units)
MOCD223R2M
Small Outline 8-Pin
Tape and Reel (2500 Units)
MOCD223VM
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tube (100 Units)
MOCD223R2VM
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tape and Reel (2500 Units)
Marking Information
1
1
223
V
3
X YY S
4
D223
2
6
V
5
3
MOC223M
X YY S
4
2
6
5
MOCD223M
Figure 10. Top Marks
Table 1. Top Mark Definitions
1
Fairchild Logo
2
Device Number
3
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4
One-Digit Year Code, e.g., “4”
5
Digit Work Week, Ranging from “01” to “53”
6
Assembly Package Code
©2003 Fairchild Semiconductor Corporation
MOC223M, MOCD223M Rev. 5
www.fairchildsemi.com
8
MOC223M, MOCD223M — 8-pin SOIC Darlington Output Optocouplers
Ordering Information
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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