MPF102

MPF102 Preferred Devices JFET VHF Amplifier N−Channel − Depletion Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage Gate−Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG PD 350 2.8 TJ Tstg 125 −65 to +150 mW mW/°C °C °C 1 2 3 http://onsemi.com 1 DRAIN Value 25 25 −25 10 Unit Vdc Vdc Vdc mAdc 2 SOURCE 3 GATE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TO−92 (TO−226AA) CASE 29−11 STYLE 5 MARKING DIAGRAM MPF 102 AYWW G G MPF102 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPF102 MPF102G Package TO−92 TO−92 (Pb−Free) Shipping 1000 Units/Bulk 1000 Units/Bulk Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 3 Publication Order Number: MPF102/D MPF102 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −10 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) Gate −Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) Gate −Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) ON CHARACTERISTICS Zero −Gate −Voltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL− SIGNAL CHARACTERISTICS Forward Transfer Admittance (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%. ⎪yfs⎟ 2000 1600 Re(yis) − Re(yos) − Ciss − Crss − 3.0 pF 7.0 pF 200 800 7500 − mmhos IDSS 2.0 20 mAdc V(BR)GSS −25 IGSS − − VGS(off) − VGS −0.5 −7.5 Vdc −8.0 Vdc −2.0 −2.0 nAdc mAdc − Vdc Symbol Min Max Unit mmhos mmhos http://onsemi.com 2 MPF102 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS gfs @ IDSS gfs @ 0.25 IDSS Figure 3. Forward Transfer Admittance (yfs) Figure 4. Output Admittance (yos) http://onsemi.com 3 MPF102 COMMON SOURCE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 1.0 350° 100 100 0.9 200 340° 330° 320° 40° 30° 20° 10° 0° 0.4 350° 340° 330° 320° ID = 0.25 IDSS 200 300 400 300 50° 310° 50° 0.3 ID = IDSS, 0.25 IDSS 900 800 600 400 700 500 300 200 100 0.1 0.2 310° 60° 70° 80° 90° 100° 110° 120° 0.8 ID = IDSS 500 400 600 500 600 700 800 900 280° 270° 260° 250° 240° 80° 90° 100° 110° 120° 300° 290° 60° 70° 300° 290° 280° 270° 260° 250° 240° 0.7 0.6 800 900 700 0.0 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 5. S11s 30° 40° 20° 10° 0° 350° 340° 330° 320° 40° 30° 20° Figure 6. S12s 10° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320° 0.6 50° 0.5 60° 70° 80° 90° 100° 110° 120° 900 800 700 600 500 400 300 ID = IDSS 200 100 0.5 230° 0.6 130° 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 0.3 900 0.3 0.4 300° 290° 280° 270° 260° 250° 240° 60° 70° 80° 90° 100° 110° 120° 310° 50° 310° 300° 0.7 290° 280° 270° 260° 250° 240° 0.6 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 7. S21s http://onsemi.com 4 Figure 8. S22s MPF102 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ IDSS gfg @ 0.25 IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 5 MPF102 COMMON GATE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 40° 20° 10° 0° 0.7 100 0.6 50° 100 0.5 60° ID = IDSS 70° 80° 90° 100° 110° 120° 0.4 200 300 400 500 600 900 700 0.3 800 900 ID = 0.25 IDSS 200 300 400 500 600 700 800 290° 280° 270° 260° 250° 240° 70° 80° 90° 100° 110° 120° 600 ID = IDSS 700 800 900 130° 230° 130° 900 0.03 230° 100 500 600 700 800 240° 0.02 ID = 0.25 IDSS 0.01 0.01 290° 280° 270° 260° 250° 0.02 300° 60° 300° 310° 50° 0.03 310° 350° 340° 330° 320° 40° 30° 20° 10° 0° 0.04 350° 340° 330° 320° 0.0 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 0.04 180° 190° 200° 210° 220° Figure 13. S11g 30° 40° 20° 10° 0° 0.5 100 0.4 50° 0.3 60° 70° 80° 0.1 90° 100° 110° 120° 900 900 260° 250° 240° 100° 110° 120° 0.2 ID = 0.25 IDSS 300° 290° 280° 270° 60° 70° 80° 90° ID = IDSS 100 310° 50° 350° 340° 330° 320° 40° 30° 20° Figure 14. S12g 10° 0° 1.5 1.0 100 0.9 350° 300 200 400 600 800 900 310° 340° 500 700 330° 320° ID = IDSS, 0.25 IDSS 0.8 300° 0.7 290° 280° 270° 260° 250° 240° 0.6 130° 230° 130° 230° 140° 150° 160° 170° 180° 190° 200° 210° 220° 140° 150° 160° 170° 180° 190° 200° 210° 220° Figure 15. S21g http://onsemi.com 6 Figure 16. S22g MPF102 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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