MPF930, MPF960, MPF990
Preferred Device
Small Signal MOSFET
2 Amps, 35, 60, 90 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
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Symbol
MPF930
MPF960
MPF990
Unit
Drain–Source
Voltage
VDS
35
60
90
Vdc
Drain–Gate Voltage
VDG
35
60
90
Vdc
Gate–Source
Voltage
– Continuous
– Non–repetitive
(tp ≤ 50 µs)
VGS
VGSM
Vdc
Vpk
N–Channel
Drain Current
Continuous
(Note 1.)
Pulsed (Note 2.)
D
Adc
Total Device
Dissipation
@ TA = 25°C
Derate above
25°C
Operating and
Storage Junction
Temperature
Range
±20
±40
2 AMPERES
35, 60, 90 VOLTS
RDS(on) = 0.7 Ω (MPF930)
RDS(on) = 0.8 Ω (MPF960)
RDS(on) = 1.2 Ω (MPF990)
ID
2.0
IDM
3.0
G
PD
1.0
8.0
Watts
mW/°C
S
TJ, Tstg
°C
–55 to 150
Thermal Resistance
θJA
125
°C/W
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
TO–92
CASE 29
Style 22
12
3
MARKING DIAGRAM
& PIN ASSIGNMENT
MPF930
YWW
1
Source
3
Drain
2
Gate
Y
WW
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MPF930/D
MPF930, MPF960, MPF990
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
35
60
90
–
–
–
–
–
–
IGSS
–
–
50
nAdc
IDSS
–
–
10
µAdc
VGS(Th)
1.0
–
3.5
Vdc
MPF930
MPF960
MPF990
–
–
–
0.4
0.6
0.6
0.7
0.8
1.2
(ID = 1.0 Adc)
MPF930
MPF960
MPF990
–
–
–
0.9
1.2
1.2
1.4
1.7
2.4
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
–
–
–
2.2
2.8
2.8
3.0
3.5
4.8
–
–
–
0.9
1.2
1.2
1.4
1.7
2.0
ID(on)
1.0
2.0
–
Amps
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
70
–
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
20
–
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
49
–
pF
gfs
200
380
–
mmhos
Turn–On Time
ton
–
7.0
15
ns
Turn–Off Time
toff
–
7.0
15
ns
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
V(BR)DSX
MPF930
MPF960
MPF990
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Vdc
ON CHARACTERISTICS (Note 2.)
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on)
Vdc
Ω
rDS(on)
MPF930
MPF960
MPF990
On–State Drain Current
(VDS = 25 Vdc, VGS = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Forward Transconductance
(VDS = 25 Vdc, ID = 0.5 Adc)
SWITCHING CHARACTERISTICS
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
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2
MPF930, MPF960, MPF990
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE
50 Ω INPUT
23
PULSE GENERATOR
50
Vin
20 dB
50 Ω ATTENUATOR
40 pF
50
ton
Vout
toff
90%
90%
OUTPUT
V
INVERTED out
1.0 M
10%
90%
10 V
INPUT
Vin
10%
PULSE
WIDTH
50%
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit
ORDERING INFORMATION
Device
50%
Package
Shipping
MPF930
TO–92
1000 Unit/Box
MPF930RLRE
TO–92
2000 Tape & Reel
MPF930A
TO–92
1000 Unit/Box
MPF930ARLRE
TO–92
2000 Tape & Reel
MPF960
TO–92
1000 Unit/Box
MPF960RLRA
TO–92
2000 Tape & Reel
MPF990
TO–92
1000 Unit/Box
MPF990RLRA
TO–92
2000 Tape & Reel
MPF990RLRP
TO–92
2000 Ammo Pack
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3
200
10
180
5.0
VGS = 0 V
160
VGS = 10 V
C, CAPACITANCE (pF)
V DS , DRAIN-SOURCE VOLTAGE (VOLTS)
MPF930, MPF960, MPF990
2.0
1.0
0.5
140
Coss
120
100
80
Ciss
60
40
0.2
Crss
20
0.1
-55
-35
-15
85 105
+5.0 25
45 65
TJ, JUNCTION TEMPERATURE (°C)
125
0
145
0
5.0
2.1
2.4
ID(on), DRAIN CURRENT (AMPS)
2.8
VDS = 10 V
1.8
1.5
1.2
0.9
0.6
0.3
0
0
1.0
6.0 7.0 8.0
2.0 3.0 4.0 5.0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
9.0
9.0 V
2.0
8.0 V
1.6
7.0 V
1.2
6.0 V
0.8
5.0 V
0.4
0
10
VGS = 10 V
4.0 V
0
Figure 5. Transfer Characteristic
5.0
10
20
30
40
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Output Characteristic
2.8
VGS = 10 V
2.4
9.0 V
2.0
8.0 V
1.6
7.0 V
1.2
6.0 V
0.8
5.0 V
0.4
0.2
0
0.5
50
Figure 4. Capacitance Variation
2.4
ID(on), DRAIN CURRENT (AMPS)
ID(on), DRAIN CURRENT (AMPS)
Figure 3. On Voltage versus Temperature
10
20
30
40
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
1.0
2.0
3.0
4.0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic
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4
4.0 V
3.0 V
5.0
50
MPF930, MPF960, MPF990
PACKAGE DIMENSIONS
TO–92
CASE 29–11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
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5
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
MPF930, MPF960, MPF990
Notes
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6
MPF930, MPF960, MPF990
Notes
http://onsemi.com
7
MPF930, MPF960, MPF990
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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MPF930/D