MPS2907A Series
General Purpose
Transistors
PNP Silicon
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Features
• These are Pb−Free Devices*
COLLECTOR
3
2
BASE
MAXIMUM RATINGS
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
1
EMITTER
TO−92
CASE 29
STYLE 1
3
STRAIGHT LEAD
BULK PACK
Line 1
Line 2
MPS
2907A
MPS2907ARLG
MPS2
907A
MPS2907ARLRAG
MPS
2907
MPS2907ARLRPG
MPS
2907
3
BENT LEAD
TAPE & REEL
AMMO PACK
MPSx
x907x
YWW G
G
DEVICE MARKING
Device
2
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MPS2907AG
1
12
Y
WW
G
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 6
1
Publication Order Number:
MPS2907A/D
MPS2907A Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
Vdc
Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 150°C)
ICBO
−
−
−0.01
−10
−
−50
75
100
100
100
50
−
−
−
300
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
fT
200
−
MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
ton
−
45
ns
td
−
10
ns
tr
−
40
ns
toff
−
100
ns
ts
−
80
ns
tf
−
30
ns
Characteristic
OFF CHARACTERISTICS
Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IB
mAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc) (Note 1)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 1)
hFE
Collector −Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 1 and 2),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc) (Figures 1 and 5)
Rise Time
Turn−Off Time
Storage Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
Fall Time
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
http://onsemi.com
2
MPS2907A Series
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
-30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
-6.0 V
1.0 k
1.0 k
0
50
-16 V
+15 V
-30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
TYPICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
1000
VCE = −10 V
TA = 150°C
TA = 25°C
100
TA = −55°C
10
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
-1.0
-0.8
IC = -1.0 mA
-10 mA
-100 mA
-500 mA
-0.6
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2 -0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-2.0
Figure 4. Collector Saturation Region
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3
-3.0
-5.0 -7.0 -10
-20 -30
-50
MPS2907A Series
ORDERING INFORMATION
Package
Shipping†
MPS2907AG
TO−92
(Pb−Free)
5000 Units / Bulk
MPS2907ARLG
TO−92
(Pb−Free)
MPS2907ARLRAG
TO−92
(Pb−Free)
MPS2907ARLRPG
TO−92
(Pb−Free)
Device
2000 / Tape & Reel
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
t, TIME (ns)
300
200
VCC = -30 V
IC/IB = 10
TJ = 25°C
tr
100
70
50
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
2.0 V
3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT
-200 -300 -500
Figure 5. Turn−On Time
500
300
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
tf
100
70
50
30
t′s = ts - 1/8 tf
20
10
7.0
5.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−Off Time
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4
MPS2907A Series
TYPICAL SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
10
10
8.0
8.0
f = 1.0 kHz
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
VCE = 10 Vdc, TA = 25°C
IC = -1.0 mA, Rs = 430 W
-500 mA, Rs = 560 W
-50 mA, Rs = 2.7 kW
-100 mA, Rs = 1.6 kW
6.0
4.0
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
IC = -50 mA
-100 mA
-500 mA
-1.0 mA
2.0
0
100
50
100
200
f, FREQUENCY (kHz)
C, CAPACITANCE (pF)
100
Cibo
Cobo
1
0.1
1
5.0 k 10 k
20 k
50 k
Figure 8. Source Resistance Effects
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 7. Frequency Effects
10
500 1.0 k 2.0 k
Rs, SOURCE RESISTANCE (W)
10
400
300
200
100
80
VCE = -20 V
TJ = 25°C
60
40
30
20
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current−Gain − Bandwidth Product
1
1
0.1
VBE(ON), BASE−EMITTER ON
VOLTAGE (V)
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
TA = 25°C
TA = −55°C
TA = 150°C
0.01
0.001
0.8
0.6
0.4
TA = −55°C
TA = 25°C
TA = 150°C
0.2
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. Collector−Emitter Saturation
Voltage vs. Collector Current
VCE = −10 V
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Base−Emitter Turn−ON Voltage vs.
Collector Current
http://onsemi.com
5
MPS2907A Series
+0.5
0
0.8
COEFFICIENT (mV/°C)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1
TA = −55°C
TA = 25°C
0.6
0.4
TA = 150°C
0.2
RqVC for VCE(sat)
-0.5
-1.0
-1.5
RqVB for VBE
-2.0
IC/IB = 10
0
0.0001
0.001
0.01
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
0.1
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Temperature Coefficients
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
SCALE 1:1
1
12
3
STRAIGHT LEAD
BULK PACK
DATE 09 MAR 2007
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
N
1
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
N
A
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
DIM
A
B
C
D
G
J
K
N
P
R
V
D
X X
J
V
1
C
N
SECTION X−X
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
---
STYLES ON PAGE 2
DOCUMENT NUMBER:
STATUS:
98ASB42022B
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
TO−92 (TO−226)
http://onsemi.com
1
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 1 OFXXX
3
TO−92 (TO−226)
CASE 29−11
ISSUE AM
DATE 09 MAR 2007
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 18:
PIN 1. ANODE
2. CATHODE
3. NOT CONNECTED
STYLE 19:
PIN 1. GATE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. NOT CONNECTED
2. CATHODE
3. ANODE
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 23:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 24:
PIN 1. EMITTER
2. COLLECTOR/ANODE
3. CATHODE
STYLE 25:
PIN 1. MT 1
2. GATE
3. MT 2
STYLE 26:
PIN 1. VCC
2. GROUND 2
3. OUTPUT
STYLE 27:
PIN 1. MT
2. SUBSTRATE
3. MT
STYLE 28:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 29:
PIN 1. NOT CONNECTED
2. ANODE
3. CATHODE
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 31:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 32:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 33:
PIN 1. RETURN
2. INPUT
3. OUTPUT
STYLE 34:
PIN 1. INPUT
2. GROUND
3. LOGIC
STYLE 35:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
DOCUMENT NUMBER:
STATUS:
98ASB42022B
ON SEMICONDUCTOR STANDARD
NEW STANDARD:
© Semiconductor Components Industries, LLC, 2002
October, DESCRIPTION:
2002 − Rev. 0
TO−92 (TO−226)
http://onsemi.com
2
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
Case Outline Number:
PAGE 2 OFXXX
3
DOCUMENT NUMBER:
98ASB42022B
PAGE 3 OF 3
ISSUE
AM
REVISION
ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA.
DATE
09 MAR 2007
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 11AM
Case Outline Number:
29
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