MPS2907ARLRM

MPS2907A Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current – Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD mW mW/°C 1.5 12 Watts mW/°C –55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W TJ, Tstg 1 EMITTER STYLE 1 625 5.0 Operating and Storage Junction Temperature Range 2 BASE TO–92 CASE 29 STYLES 1, 14 1 2 3 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic MPS2 907A YWW Y WW = Year = Work Week ORDERING INFORMATION Device Package Shipping MPS2907A TO–92 5000 Units/Box MPS2907ARLRA TO–92 2000/Tape & Reel MPS2907ARLRE TO–92 2000/Ammo Pack MPS2907ARLRM TO–92 2000/Ammo Pack MPS2907ARLRP TO–92 2000/Ammo Pack Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 October, 2001 – Rev. 0 1 Publication Order Number: MPS2907A/D MPS2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –60 – Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (Note 1.) (IC = –10 mAdc, IB = 0) V(BR)CEO Vdc Collector–Base Breakdown Voltage (IC = –10
Adc, IE = 0) V(BR)CBO –60 – Vdc Emitter–Base Breakdown Voltage (IE = –10
Adc, IC = 0) V(BR)EBO –5.0 – Vdc Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX – –50 nAdc Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) ICBO – – –0.01 –10 Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IB – –50 75 100 100 100 50 – – – 300 – – – –0.4 –1.6 – – –1.3 –2.6 fT 200 – MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo – 8.0 pF Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo – 30 pF ton – 45 ns td – 10 ns tr – 40 ns toff – 100 ns ts – 80 ns tf – 30 ns µAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (Note 1.) (IC = –500 mAdc, VCE = –10 Vdc) (Note 1.) hFE Collector–Emitter Saturation Voltage (Note 1.) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base–Emitter Saturation Voltage (Note 1.) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) – Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (Notes 1. and 2.), (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn–On Time Delay Time (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 15 mAdc) Ad ) (Figures (Fi 1 and d 5) Rise Time Turn–Off Time Storage Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = 15 mAdc) Ad ) (Figure (Fi 2) Fall Time 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 MPS2907A INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 50 -16 V INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -
55°C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 Figure 4. Collector Saturation Region http://onsemi.com 3 -3.0 -5.0 -7.0 -10 -20 -30 -50 MPS2907A TYPICAL CHARACTERISTICS 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 30 20 10 td @ VBE(off) = 0 V tf 100 70 50 t′s = ts - 1/8 tf 30 20 7.0 5.0 3.0 -5.0 -7.0 -10 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT -200 -300 -500 Figure 5. Turn–On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time TYPICAL SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 6.0 4.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1.0 kHz IC = -1.0 mA, Rs = 430 Ω -500 µA, Rs = 560 Ω -50 µA, Rs = 2.7 kΩ -100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 6.0 IC = -50 µA -100 µA -500 µA -1.0 mA 4.0 2.0 0 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 4 50 k MPS2907A TYPICAL SMALL–SIGNAL CHARACTERISTICS 30 C, CAPACITANCE (pF) 20 Ceb 10 7.0 Ccb 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NOISE FIGURE VCE = 10 Vdc, TA = 25°C 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 -1.0 -0.8 -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) TJ = 25°C V, VOLTAGE (VOLTS) 400 VBE(on) @ VCE = -10 V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RVC for VCE(sat) -50 -100 -200 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 MPS2907A PACKAGE DIMENSIONS TO–92 TO–226AA CASE 29–11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE MPS2907A Notes http://onsemi.com 7 MPS2907A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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