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ON Semiconductort
MPS3638A
Switching Transistor
PNP Silicon
w
This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−25
Vdc
Collector −Emitter Voltage
VCES
−25
Vdc
Collector −Base Voltage
VCBO
−25
Vdc
Emitter −Base Voltage
VEBO
−4.0
Vdc
Collector Current — Continuous
IC
−500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
1
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
3
CASE 29−11, STYLE 1
TO−92 (TO−226AA)
COLLECTOR
3
2
BASE
THERMAL CHARACTERISTICS
Characteristic
2
Symbol
Max
Unit
RqJA(1)
200
°C/W
RqJC
83.3
°C/W
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −100 mAdc, VBE = 0)
V(BR)CES
−25
—
Vdc
Collector −Emitter Sustaining Voltage(2)
(IC = −10 mAdc, IB = 0)
VCEO(sus)
−25
—
Vdc
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−25
—
Vdc
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO
−4.0
—
Vdc
—
—
−0.035
−2.0
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = −15 Vdc, VBE = 0)
(VCE = −15 Vdc, VBE = 0, TA = −65°C)
ICES
Emitter Cutoff Current
(VEB = −3.0 V, IC = 0)
IEBO
—
−35
nA
IB
—
−0.035
mAdc
Base Current
(VCE = −15 Vdc, VBE = 0)
mAdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
MPS3638A/D
MPS3638A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Min
Max
80
100
100
20
—
—
—
—
—
—
−0.25
−1.0
—
−0.80
−1.1
−2.0
150
—
—
10
—
25
—
2000
—
15
100
—
—
1.2
td
—
20
ns
tr
—
70
ns
ts
—
140
ns
Fall Time
(VCC = −10 Vdc, IC = −300 mAdc,
IB1 = −30 mAdc, IB2 = −30 mAdc)
tf
—
70
ns
Turn−On Time
(IC = −300 mAdc, IB1 = −30 mAdc)
ton
—
75
ns
Turn−Off Time
(IC = −300 mAdc, IB1 = −30 mAdc, IB2 = 30 mAdc)
toff
—
170
ns
ON
Symbol
Unit
CHARACTERISTICS(2)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −2.0 Vdc)
hFE
Collector −Emitter Saturation Voltage
(IC = −50 mAdc, IB = −2.5 mAdc)
(IC = −300 mAdc, IB = −30 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −50 mAdc, IB = −2.5 mAdc)
(IC = −300 mAdc, IB = −30 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(VCE = −3.0 Vdc, IC = −50 mAdc, f = 100 MHz)
fT
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = −10 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = −10 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hre
Small−Signal Current Gain
(IC = −10 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = −10 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe
MHz
pF
pF
kΩ
X 10− 4
—
mmhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
(VCC = −10 Vdc, IC = −300 mAdc, IB1 = −30 mAdc)
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
http://onsemi.com
2
MPS3638A
SWITCHING TIME EQUIVALENT TEST CIRCUIT
−30 V
−30 V
200 Ω
< 2 ns
+2 V
+14 V
0
0
1.0 kΩ
−16 V
CS* < 10 pF
10 to 100 μs,
DUTY CYCLE = 2%
200 Ω
< 20 ns
1.0 kΩ
−16 V
CS* < 10 pF
1.0 to 100 μs,
DUTY CYCLE = 2%
+4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
TRANSIENT CHARACTERISTICS
25°C
100°C
30
Ceb
10
7.0
Ccb
5.0
VCC = 30 V
IC/IB = 10
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
2.0 3.0 5.0 7.0 10
0.5 0.7 1.0
REVERSE VOLTAGE (VOLTS)
20
0.1
30
10
Figure 3. Capacitances
20
200
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
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3
300
500
MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
25°C
100°C
100
100
IC/IB = 10
70
70
20
t r , RISE TIME (ns)
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
30
20
10
10
7.0
7.0
10
20
30
50
70
200
100
300
5.0
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise Time
200
IC/IB = 10
t s′, STORAGE TIME (ns)
t, TIME (ns)
50
5.0
VCC = 30 V
IC/IB = 10
50
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts − 1/8 tf
30
20
10
20
30
50
70
100
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
http://onsemi.com
4
200
300
500
300
500
MPS3638A
SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = −10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
10
8
8
6
4
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1 kHz
IC = 1.0 mA, RS = 430 Ω
IC = 500 μA, RS = 560 Ω
IC = 50 μA, RS = 2.7 kΩ
IC = 100 μA, RS = 1.6 kΩ
2
0.5 1.0 2.0 5.0
10
20
50
IC = 50 μA
100 μA
500 μA
1.0 mA
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2
6
0
100
50
100
200
500
1k
2k
5k
10k 20k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
http://onsemi.com
5
50k
MPS3638A
h PARAMETERS
VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high−gain and a low−gain unit were
selected from the 2N4402 line, and the same units were used
to develop the correspondingly−numbered curves on each
graph.
100k
700
50k
hfe , CURRENT GAIN
500
300
200
100
2N4402 UNIT 1
2N4402 UNIT 2
70
50
0.2
0.3
0.5 0.7 1.0
2.0
3.0
10k
5k
2k
1k
500
100
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
5.0 7.0
10
500
10
5.0
2N4402 UNIT 1
2N4402 UNIT 2
2.0
1.0
0.5
0.2
0.1
0.1
2N4402 UNIT 1
2N4402 UNIT 2
20k
200
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 −4 )
30
0.1
hie , INPUT IMPEDANCE (OHMS)
1000
0.2
0.3
0.5 0.7 1.0
2.0
3.0
100
50
20
10
5.0
1.0
0.1
5.0 7.0 10
2N4402 UNIT 1
2N4402 UNIT 2
2.0
0.2
0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
http://onsemi.com
6
5.0 7.0 10
MPS3638A
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
25°C
1.0
−55 °C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
0
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
qVC for VCE(sat)
0.5
1.0
1.5
qVS for VBE
2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
2.5
0.1 0.2
500
Figure 16. “On” Voltages
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 17. Temperature Coefficients
http://onsemi.com
7
500
MPS3638A
PACKAGE DIMENSIONS
CASE 029−11
(TO−226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
F
SEATING
PLANE
L
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X−X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.135
−−−
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MPS3638A/D
