MPS4126

ON Semiconductort Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value –25 –25 –4.0 –200 625 5.0 1.5 12 –55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C MPS4126 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 2 BASE 1 EMITTER COLLECTOR 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mA, IB = 0) Collector–Base Breakdown Voltage (IC = –10 mA, IE = 0) Emitter–Base Breakdown Voltage (IC = 0, IE = –10 mA) Collector Cutoff Current (VCB = –20 V, IE = 0) Emitter Cutoff Current (VEB = –3.0 V, IC = 0) V(BR)CEO –25 V(BR)CBO –25 V(BR)EBO –4.0 ICBO — IEBO — –50 –50 nAdc — nAdc — Vdc — Vdc Vdc © Semiconductor Components Industries, LLC, 2001 1 November, 2001 – Rev. 2 Publication Order Number: MPS4126/D MPS4126 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –2.0 mA, VCE = –1.0 V) (IC = –50 mA, VCE = –1.0 V) Collector–Emitter Saturation Voltage (IC = –50 mA, IB = –5.0 mA) Base–Emitter Saturation Voltage (IC = –50 mA, IB = –5.0 mA) hFE 120 60 VCE(sat) — VBE(sat) — –0.95 –0.4 Vdc 360 — Vdc — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –20 V, f = 100 MHz) Output Capacitance (VCB = –5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 V, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = –2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = –100 mA, VCE = –5.0 V, RS = 1.0 kΩ, f = 1.0 kHz) fT 170 Cob — Cib — hfe 120 NF — 4.0 480 dB 11.5 — 4.5 pF — pF MHz http://onsemi.com 2 MPS4126 PACKAGE DIMENSIONS CASE 029–04 (TO–226AA) ISSUE AD A R P SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 3 MPS4126 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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