MPS5172RLRMG

MPS5172 General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 60°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 25 25 5.0 100 625 5.0 450 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C mW W mW/°C °C TO−92 (TO−226) CASE 29 STYLE 1 2 BASE 1 EMITTER 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W MPS 5172 AYWW G G MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS5172 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS5172 MPS5172G MPS5172RLRM *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping 5000 / Bulk 5000 / Bulk 2000/Ammo Pack 2000/Ammo Pack MPS5172RLRMG 1 December, 2005 − Rev. 2 Publication Order Number: MPS5172/D MPS5172 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 10 mA, IB = 0) Collector Cutoff Current (VCE = 25 V, IB = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (VCE = 10 V, IC = 10 mA) Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base−Emitter On Voltage (IC = 10 mAdc, VCE = 10 V) SMALL−SIGNAL CHARACTERISTICS Collector−Base Capacitance (VCB = 10 V, f = 1.0 MHz) Small−Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Ccb hfe 1.6 100 10 750 pF − hFE VCE(sat) VBE(on) 100 − 0.5 500 0.25 1.25 − Vdc Vdc V(BR)CEO ICES ICBO − − IEBO − 100 10 100 nAdc mAdc nAdc 25 − − 100 Vdc nAdc Symbol Min Max Unit http://onsemi.com 2 MPS5172 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C h FE , DC CURRENT GAIN 200 25°C −55 °C 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.8 IC = 1.0 mA 10 mA 50 mA TJ = 25°C IC, COLLECTOR CURRENT (mA) 100 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% IB = 500 mA 400 mA 300 mA 0.6 100 mA 60 200 mA 40 100 mA 20 0 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 Figure 2. Collector Saturation Region Figure 3. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.4 1.6 0.8 0 *APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) − 55°C to 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V −0.8 25°C to 125°C −1.6 qVB for VBE 0.2 − 55°C to 25°C 50 100 VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 −2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages Figure 5. Temperature Coefficients http://onsemi.com 3 MPS5172 TYPICAL DYNAMIC CHARACTERISTICS f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 500 TJ = 25°C f = 100 MHz 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 10 7.0 5.0 Cib Cob TJ = 25°C f = 1.0 MHz 3.0 2.0 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 6. Current−Gain − Bandwidth Product Figure 7. Capacitance http://onsemi.com 4 MPS5172 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 P(pk) t1 t2 FIGURE 9 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−569) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 0.01 0.01 0.02 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 8. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10−1 10−2 − 40 − 20 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 10. 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms TC = 25°C TA = 25°C TJ = 150°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT dc 100 ms 10 ms 1.0 s A train of periodical power pulses can be represented by the model as shown in Figure 9. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 8 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 8 by the steady state value RqJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. dc 4.0 6.0 8.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 11 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 8. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 11. http://onsemi.com 5 MPS5172 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− EMITTER BASE COLLECTOR SOURCE MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. 2. 3. 3. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MPS5172/D