MPS5179
Preferred Device
High Frequency Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C W mW/°C °C
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COLLECTOR 3 2 BASE 1 EMITTER
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1 2 3
TO−92 CASE 29−11 STYLE 1
MPS 5179 AYWW G G
MPS5179 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 Shipping † 5000 Units/Box 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel 2000/Tape & Ammo
TO−92 2000/Tape & Ammo (Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 3
Publication Order Number: MPS5179/D
MPS5179
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) 1. fT is defined as the frequency at which |hfe| extrapolates to unity. fT Ccb hfe 900 − 25 2000 1.0 300 MHz pF − hFE VCE(sat) VBE(sat) 25 − − 250 0.4 1.0 − Vdc Vdc VCEO(sus) V(BR)CBO V(BR)EBO ICBO − − 0.02 1.0 12 20 2.5 − − − Vdc Vdc Vdc mAdc Symbol Min Max Unit
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MPS5179
PACKAGE DIMENSIONS
TO−92 (TO−226) CASE 29−11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−−
K
XX G H V
1
D J C SECTION X−X N N
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
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PUBLICATION ORDERING INFORMATION
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MPS5179/D
