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MPS6521

MPS6521

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MPS6521 - Amplifier Transistors - ON Semiconductor

  • 数据手册
  • 价格&库存
MPS6521 数据手册
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by MPS6521/D COLLECTOR 3 2 BASE NPN * MPS6521 1 EMITTER PNP MPS6523 COLLECTOR 3 2 BASE Voltage and current are negative for PNP transistors *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage MPS6521 MPS6523 Collector – Base Voltage MPS6521 MPS6523 Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 — 4.0 100 625 5.0 1.5 12 – 55 to +150 — 25 Vdc mAdc mW mW/°C Watts mW/°C °C Symbol VCEO 25 — — 25 Vdc 1 2 3 NPN PNP Unit Vdc CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO — — 0.05 0.05 25 4.0 — — Vdc Vdc mAdc Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces MPS6520/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 NPN MPS6521 PNP MPS6523 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) hFE MPS6521 MPS6521 MPS6523 MPS6523 VCE(sat) 150 300 150 300 — — 600 — 600 0.5 Vdc — SMALL– SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k Ω, Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) Cobo NF — — 3.5 3.0 pF dB 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS6521 PNP MPS6523 NPN MPS6521 EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V
MPS6521 价格&库存

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