MPS6601RLRAG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NPN − MPS6601; PNP − MPS6651, MPS6652 MPS6652 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MPS6601/6651 MPS6652 Collector −Base Voltage Vdc 25 30 VEBO 4.0 Vdc Collector Current − Continuous IC 1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range PNP 1 EMITTER 1 EMITTER VCBO Emitter −Base Voltage NPN Vdc 25 40 MPS6601/6651 MPS6652 2 BASE 2 BASE TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. MARKING DIAGRAM MPS 66xy AYWW G G MPS66xy = Device Code x = 0 or 5 y = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 April, 2007 − Rev. 5 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPS6601/D NPN − MPS6601; PNP − MPS6651, MPS6652 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit 25 40 − − 25 40 − − 4.0 − − − 0.1 0.1 − − 0.1 0.1 50 50 30 − − − − 0.6 − 1.2 100 − − 30 td − 25 ns tr − 30 ns ts − 250 ns tf − 50 ns OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPS6601/6651 MPS6652 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CBO MPS6601/6651 MPS6652 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) MPS6601/6651 MPS6652 Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6652 Vdc Vdc mAdc ICES mAdc ICBO ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo pF SWITCHING CHARACTERISTICS Delay Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, tp w 300 ns Duty Cycle) Rise Time Storage Time Fall Time ORDERING INFORMATION Package Shipping† MPS6601RLRAG TO−92 (TO−226) (Pb−Free) 2000 Units / Tape & Reel MPS6651G TO−92 (TO−226) (Pb−Free) MPS6652 TO−92 (TO−226) MPS6652G TO−92 (TO−226) (Pb−Free) MPS6652RLRAG TO−92 (TO−226) (Pb−Free) Device 5000 Units / Bulk 2000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE NPN − MPS6601; PNP − MPS6651, MPS6652 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 P(pk) SINGLE PULSE t1 0.01 SINGLE PULSE 0.03 t2 0.02 0.01 0.001 RqJC(t) = (t) qJC RqJC = 100°C/W MAX RqJA(t)d = r(t) qJA RqJA = 357°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (SECONDS) Figure 1. Thermal Response TURN−ON TIME VCC −1.0 V 5.0 ms 100 VCC +VBB +40 V +40 V RL 100 OUTPUT +10 V 0 TURN−OFF TIME tr = 3.0 ns OUTPUT RB Vin RB Vin * CS t 6.0 pF 5.0 mF RL * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits http://onsemi.com 3 100 NPN − MPS6601; PNP − MPS6651, MPS6652 NPN PNP 300 200 70 VCE = 1.0 V TJ = 25°C 50 30 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) h FE , CURRENT GAIN 100 10 100 VCE = 10 V TJ = 25°C f = 30 MHz 10 100 200 1000 300 200 100 70 50 VCE = −10 V TJ = 25°C f = 30 MHz 30 −10 −100 −200 −1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product Figure 6. Current Gain Bandwidth Product −1.0 TJ = 25°C VBE(SAT) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) −1000 IC, COLLECTOR CURRENT (mA) 0.8 VBE(ON) @ VCE = 1.0 V 0.6 0.4 0 1.0 −100 Figure 4. MPS6651/6652 DC Current Gain 70 0.2 VCE = −1.0 V TJ = 25°C Figure 3. MPS6601/6602 DC Current Gain 100 1.0 50 IC, COLLECTOR CURRENT (mA) 200 30 70 IC, COLLECTOR CURRENT (mA) 300 50 100 20 −10 1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) h FE , CURRENT GAIN 200 100 0 −1.0 1000 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = −1.0 V −0.4 −0.2 VCE(SAT) @ IC/IB = 10 10 −0.6 TJ = 25°C VCE(SAT) @ IC/IB = 10 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. On Voltages Figure 8. On Voltages http://onsemi.com 4 NPN − MPS6601; PNP − MPS6651, MPS6652 NPN PNP 160 80 TJ = 25°C 60 40 C, CAPACITANCE (pF) C, CAPACITANCE (pF) TJ = 25°C Cib 20 Cob 0 Cob Cib 5.0 1.0 10 15 20 3.0 4.0 2.0 VR, REVERSE VOLTAGE (VOLTS) 120 80 Cib 40 0 25 5.0 Cob Cob Cib −5.0 −1.0 Figure 9. Capacitance 6.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 VCE = 5.0 V f = 1.0 kHz TA = 25°C 8.0 IC = 100 mA 4.0 2.0 10 1k 100 8.0 6.0 IC = 100 mA 4.0 0 10 k 100 10 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS) Figure 11. MPS6601/6602 Noise Figure Figure 12. MPS6651/6652 Noise Figure 10 k td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 1k 500 td @ VBE(off) = −0.5 V VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 5k 3k t, TIME (NS) 5k 3k t, TIME (NS) VCE = −5.0 V f = 1.0 kHz TA = 25°C 2.0 10 k ts 200 100 1k 500 ts 200 100 50 tf 20 tr 10 −25 −5.0 Figure 10. Capacitance 10 0 −10 −15 −20 −2.0 −3.0 −4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 50 100 200 tf 50 500 tr td 20 td 1000 10 −10 −20 −50 −100 −200 −500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. MPS6601/6602 Switching Times Figure 14. MPS6651/6652 Switching Times http://onsemi.com 5 −1000 NPN − MPS6601; PNP − MPS6651, MPS6652 PNP −0.8 R qVB , TEMPERATURE COEFFICIENT (mV/°C) R qVB , TEMPERATURE COEFFICIENT (mV/ °C) NPN −1.2 −1.6 RqVB for VBE −2.0 −2.4 −2.8 1.0 10 100 1000 RqVB for VBE −2.0 −2.4 −2.8 −1.0 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 15. Base−Emitter Temperature Coefficient Figure 16. Base−Emitter Temperature Coefficient 1.0 MS 500 TC = 25°C 200 1.0 MS −500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) −1.6 −1 k TC = 25°C −200 1.0 s 100 1.0 s −100 50 MPS6601 MPS6602 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 1.0 2.0 5.0 10 MPS6651 −50 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −20 −10 40 20 −1.0 −2.0 −5.0 −10 −20 −40 VCE, COLLECTOR−EMITTER VOLTAGE VCE, COLLECTOR−EMITTER VOLTAGE Figure 17. Safe Operating Area Figure 18. Safe Operating Area 1.0 −1.0 TJ = 25°C VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) −1.2 IC, COLLECTOR CURRENT (mA) 1k 0.8 0.6 IC = 1000 mA 0.4 0.2 0 −0.8 IC = 50 mA IC = 10 mA 0.01 0.1 IC = 100 mA IC = 500 mA IC = 250 mA 1.0 10 100 TJ = 25°C −0.8 −0.6 IC = −1000 mA −0.4 −0.2 0 −0.01 IC = −10 mA IC = −50 mA −0.1 IC = −100 mA −1.0 IC = −500 mA IC = −250 mA −10 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 19. MPS6601/6602 Saturation Region Figure 20. MPS6651/6652 Saturation Region http://onsemi.com 6 −100 NPN − MPS6601; PNP − MPS6651, MPS6652 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MPS6601/D