MPS6652

MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) MPS6602 and MPS6652 are Preferred Devices Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage MPS6601/6651 MPS6602/6652 Collector −Base Voltage MPS6601/6651 MPS6602/6652 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 −55 to +150 Vdc mAdc W mW/°C W mW/°C °C Symbol VCEO 25 40 Vdc Value Unit Vdc 2 BASE http://onsemi.com COLLECTOR 3 2 BASE NPN 1 EMITTER PNP 1 EMITTER COLLECTOR 3 1 2 3 TO−92 CASE 29−11 STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. MPS 66xy AYWW G G MPS66xy = Device Code x = 0 or 5 y = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 June, 2006 − Rev. 4 Publication Order Number: MPS6601/D MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc, tp w 300 ns Duty Cycle) td tr ts tf − − − − 25 30 250 50 ns ns ns ns fT Cobo 100 − − 30 MHz pF hFE 50 50 30 VCE(sat) VBE(on) − − − − − 0.6 1.2 Vdc Vdc − MPS6601/6651 MPS6602/6652 ICBO MPS6601/6651 MPS6602/6652 − − 0.1 0.1 V(BR)CEO MPS6601/6651 MPS6602/6652 V(BR)CBO MPS6601/6651 MPS6602/6652 V(BR)EBO ICES − − 0.1 0.1 mAdc 25 40 4.0 − − − Vdc mAdc 25 40 − − Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 RqJC(t) = (t) qJC RqJC = 100°C/W MAX RqJA(t)d = r(t) qJA RqJA = 357°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 10 20 50 100 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001 t, TIME (SECONDS) Figure 1. Thermal Response TURN−ON TIME −1.0 V VCC +40 V RL OUTPUT Vin tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities RB * CS t 6.0 pF Vin 5.0 mF TURN−OFF TIME +VBB VCC +40 V 100 RB * CS t 6.0 pF 100 RL OUTPUT 5.0 ms +10 V 0 100 Figure 2. Switching Time Test Circuits http://onsemi.com 3 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN 300 200 h FE , CURRENT GAIN h FE , CURRENT GAIN 100 70 50 VCE = −1.0 V TJ = 25°C 200 PNP 100 70 50 30 VCE = 1.0 V TJ = 25°C 10 100 IC, COLLECTOR CURRENT (mA) 1000 20 −10 −100 IC, COLLECTOR CURRENT (mA) −1000 Figure 3. MPS6601/6602 DC Current Gain Figure 4. MPS6651/6652 DC Current Gain f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 100 70 50 30 VCE = 10 V TJ = 25°C f = 30 MHz 10 100 200 1000 100 70 50 30 −10 VCE = −10 V TJ = 25°C f = 30 MHz −100 −200 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product Figure 6. Current Gain Bandwidth Product 1.0 TJ = 25°C −1.0 VBE(SAT) @ IC/IB = 10 −0.8 VBE(ON) @ VCE = 1.0 V V, VOLTAGE (VOLTS) TJ = 25°C VBE(SAT) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 0.6 −0.6 VBE(ON) @ VCE = −1.0 V 0.4 0.2 0 1.0 −0.4 VCE(SAT) @ IC/IB = 10 −0.2 0 −1.0 VCE(SAT) @ IC/IB = 10 10 100 1000 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. On Voltages Figure 8. On Voltages http://onsemi.com 4 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN 80 TJ = 25°C 160 PNP TJ = 25°C C, CAPACITANCE (pF) C, CAPACITANCE (pF) 60 120 40 Cib 80 Cib 40 Cob Cob Cib −5.0 −1.0 −15 −20 −10 −2.0 −3.0 −4.0 VR, REVERSE VOLTAGE (VOLTS) −25 −5.0 20 Cob 5.0 1.0 15 20 10 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0 0 Cob Cib 0 Figure 9. Capacitance Figure 10. Capacitance 10 VCE = 5.0 V f = 1.0 kHz TA = 25°C IC = 100 mA 10 VCE = −5.0 V f = 1.0 kHz TA = 25°C NF, NOISE FIGURE (dB) 6.0 NF, NOISE FIGURE (dB) 8.0 8.0 6.0 4.0 IC = 100 mA 4.0 2.0 0 2.0 0 10 100 1k 10 k 10 100 1k 10 k Rs, SOURCE RESISTANCE (OHMS) Rs, SOURCE RESISTANCE (OHMS) Figure 11. MPS6601/6602 Noise Figure Figure 12. MPS6651/6652 Noise Figure 10 k 5k 3k 1k 500 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 10 k 5k 3k 1k 500 200 100 50 20 10 −10 −20 −50 −100 −200 tf tr td −500 −1000 IC, COLLECTOR CURRENT (mA) ts td @ VBE(off) = −0.5 V VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (NS) IC, COLLECTOR CURRENT (mA) Figure 13. MPS6601/6602 Switching Times t, TIME (NS) Figure 14. MPS6651/6652 Switching Times http://onsemi.com 5 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) NPN R qVB , TEMPERATURE COEFFICIENT (mV/° C) R qVB , TEMPERATURE COEFFICIENT (mV/° C) −0.8 −0.8 PNP −1.2 −1.2 −1.6 RqVB for VBE −2.0 −1.6 −2.0 RqVB for VBE −2.4 −2.8 1.0 −2.4 −2.8 −1.0 10 100 1000 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. Base−Emitter Temperature Coefficient Figure 16. Base−Emitter Temperature Coefficient 1k I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) 500 200 100 50 20 10 MPS6601 MPS6602 TC = 25°C 1.0 s 1.0 MS −1 k −500 −200 −100 −50 −20 −10 −1.0 −2.0 MPS6651 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −20 −40 TC = 25°C 1.0 s 1.0 MS CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 5.0 10 20 40 VCE, COLLECTOR−EMITTER VOLTAGE VCE, COLLECTOR−EMITTER VOLTAGE Figure 17. Safe Operating Area Figure 18. Safe Operating Area 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25°C 0.8 −1.0 TJ = 25°C −0.8 0.6 IC = 1000 mA 0.4 0.2 0 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100 −0.6 IC = −1000 mA IC = −500 mA IC = −250 mA −10 −100 −0.4 IC = −50 mA IC = −100 mA −0.2 0 −0.01 IC = 10 mA 0.01 0.1 IC = −10 mA −0.1 −1.0 IB, BASE CURRENT (mA) Figure 19. MPS6601/6602 Saturation Region Figure 20. MPS6651/6652 Saturation Region http://onsemi.com 6 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) ORDERING INFORMATION Device MPS6601 MPS6601G MPS6601RLRA MPS6601RLRAG MPS6602 MPS6602G MPS6602RLRA MPS6602RLRAG MPS6651 MPS6651G MPS6652 MPS6652G MPS6652RLRA MPS6652RLRAG MPS6652RLRP MPS6652RLRPG Package TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) TO−92 (TO−226) TO−92 (TO−226) (Pb−Free) 2000 Units / Tape & Ammo Box 2000 Units / Tape & Reel 5000 Units / Box 5000 Units / Box 2000 Units / Tape & Reel 5000 Units / Box 2000 Units / Tape & Reel 5000 Units / Box Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 MPS6601, MPS6602 (NPN) MPS6651, MPS6652 (PNP) PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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