MPS6717RLRA

MPS6717 One Watt Amplifier Transistor NPN Silicon Features http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 500 1.0 8.0 2.5 20 −55 to +150 Unit Vdc Vdc Vdc mAdc W mW/°C W mW/°C °C 1 2 TO−92 (TO−226) CASE 29−10 STYLE 1 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS 6717 AYWW G G MPS6717 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS6717 MPS6717G MPS6717RLRA MPS6717RLRAG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 5000 Units / Bulk 5000 Units / Bulk 2000/Tape & Reel 2000/Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPS6717/D 1 February, 2006 − Rev. 2 MPS6717 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) Base −Emitter On Voltage (IC = 250 mAdc, VCE = 1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Ccb hfe − 2.5 30 25 pF − hFE 80 50 VCE(sat) VBE(on) − − − 250 0.5 1.2 Vdc Vdc − V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 80 80 5.0 − − − − − 0.1 10 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit 400 TJ = 125°C 200 25°C −55°C 100 80 60 40 hFE , DC CURRENT GAIN VCE = 1.0 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 Figure 1. DC Current Gain http://onsemi.com 2 MPS6717 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 1.0 TJ = 25°C 0.6 0.4 0.4 0.2 0 0.05 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 1.0 0.5 2.0 5.0 IB, BASE CURRENT (mA) 10 20 50 0 0.5 1.0 2.0 20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 200 500 Figure 2. Collector Saturation Region Figure 3. “On” Voltages θ VB, TEMPERATURE COEFFICIENT (mV/ C) ° −0.8 −1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25°C −1.6 qVB for VBE 20 −2.0 −2.4 −2.8 0.5 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 4.0 0.1 Figure 4. Base−Emitter Temperature Coefficient Figure 5. Capacitance BANDWIDTH PRODUCT (MHz) 300 200 IC, COLLECTOR CURRENT (mA) VCE = 2.0 V TJ = 25°C DUTY CYCLE ≤ 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25°C TC = 25°C 1.0 s dc 1.0 ms 100 ms 100 70 50 f T, CURRENT−GAIN dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS6717 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Current−Gain — Bandwidth Product Figure 7. Active Region — Safe Operating Area http://onsemi.com 3 MPS6717 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−10 ISSUE AL A R P F L B SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.135 −−− MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 3.43 −−− K XX G H R 123 D J SECTION X−X NC N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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